Specific Process Knowledge/Etch: Difference between revisions
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{{Feedback link|Page_name=Specific_Process_Knowledge/Etch}} <br> | |||
=Wet etch or dry etch= | =Wet etch or dry etch= | ||
Etching at | Etching at Nanolab Fabrication can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate. | ||
'''Advantages of wet chemistry over dry etch techniques are:''' | '''Advantages of wet chemistry over dry etch techniques are:''' | ||
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''' Dry etch Tool Package Training ''' | ''' Dry etch Tool Package Training ''' | ||
*[[LabAdviser/Courses | *[[LabAdviser/Courses/TPT_Dry_Etch|Dry etch TPT info]] | ||
== Choose material to be etched == | == Choose material to be etched == | ||
[ | [https://labmanager.dtu.dk/view_binary.php?class=MiscDocument&id=2&name=180612_III-V_exoticall_MH.xlsx Dry etching of III-V materials and exotic materials in some other European Cleanroom facility login required] | ||
{| {{table}} | {| {{table}} | ||
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*[[/Aluminum Oxide|Aluminum Oxide]] | *[[/Aluminum Oxide|Aluminum Oxide]] | ||
*[[/Etching of Bulk Glass|Bulk Glass]] - ''Borofloat (pyrex) and fused silica (quartz)'' | *[[/Etching of Bulk Glass|Bulk Glass]] - ''Borofloat (pyrex) and fused silica (quartz)'' | ||
*[[/Lithium niobate |Lithium niobate]] | |||
|style="background: #DCDCDC"| | |style="background: #DCDCDC"| | ||
*[[/Etching of Silicon|Silicon]] | *[[/Etching of Silicon|Silicon]] | ||
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*[[/Etching of Gold|Gold]] | *[[/Etching of Gold|Gold]] | ||
*[[/Etching of Platinum|Platinum]] | *[[/Etching of Platinum|Platinum]] | ||
*[[/Etching of Molybdenum|Molybdenum]] | |||
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch|Magnetic stack]] - ''containing Ta/MnIr/NiFe'' | *[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch|Magnetic stack]] - ''containing Ta/MnIr/NiFe'' | ||
|style="background: #DCDCDC"| | |style="background: #DCDCDC"| | ||
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*[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]] | *[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]] | ||
*[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | *[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ||
*[[/DRIE-Pegasus| DRIE-Pegasus 1 | *[[/DRIE-Pegasus| DRIE-Pegasus systems:]] | ||
**[[/DRIE-Pegasus/Pegasus-1| DRIE-Pegasus 1 (Si etching on 4" wafers)]] | |||
**[[/DRIE-Pegasus/Pegasus-2| DRIE-Pegasus 2 (Dedicated for research applications)]] | |||
**[[/DRIE-Pegasus/Pegasus-3| DRIE-Pegasus 3 (Si etching on 150 mm wafers)]] | |||
**[[/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4 (Etching of silicon based dielectrics on 150 mm wafers)]] | |||
*[[/ICP Metal Etcher|ICP Metal Etch]] | *[[/ICP Metal Etcher|ICP Metal Etch]] | ||
*[[/III-V ICP|III-V ICP]] | *[[/III-V ICP|III-V ICP]] | ||
*[[/III-V RIE|III-V RIE - Plassys]] | *[[/III-V RIE|III-V RIE - Plassys (Has been decommissioned!)]] | ||
*[[/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | *[[/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
|style="background: #DCDCDC"| | |style="background: #DCDCDC"| | ||
*[[/Overview of chemicals|Overview of Chemicals]] | |||
*[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | *[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ||
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | *[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | ||