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==Coaters: Comparison Table==
{{cc-nanolab}}


{| border="2" cellspacing="0" cellpadding="2"  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Coaters click here]'''
 
[[Category: Equipment|Lithography coaters]]
[[Category: Lithography|Coaters]]
 
__TOC__
 
=Coater Comparison Table=
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>SSE Spinner</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]]</b>
|style="background:WhiteSmoke; color:black"|<b>KS Spinner</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper|Spin Coater: Süss Stepper]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin Coater: Gamma E-beam and UV|Spin Coater: Gamma E-beam and UV]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|Spin Coater: RCD8]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Labspin|Spin Coater: LabSpin 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Labspin|Spin Coater: LabSpin 03]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_LabSpin_04|Spin Coater: LabSpin 04]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spray Coater|Spray Coater]]</b>
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
 
|style="background:LightGrey; color:black"|  
!style="background:silver; width:100px; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spinning and baking of AZ2514E resist
*In-line substrate HMDS priming
*Spinning and baking of AZ4562 resist
*Coating and baking of  
*Spinning and baking of e-beam resist
**AZ MiR 701 (29cps)
**AZ nLOF 2020
**AZ 5214E
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spinning and baking of AZ2514E resist
*Coating and baking of
*Spinning and baking of AZ4562 resist
**BARC (DUV42S-6)
*Spinning and baking of SU8 resist
**KRF M230Y
**KRF M35G
**UVN2300-0.8
|style="background:WhiteSmoke; color:black"|
*In-line substrate HMDS priming
*Coating and baking of  
**AR-P 6200 (CSAR)
**AZ 5214E
**AZ MiR 701 (29cps)
**AZ 4562
*Edge bead removal on novolac-based resist and SU-8
|style="background:WhiteSmoke; color:black"|
*Coating of
**SU-8
**AZ 5214E
**AZ 4562
**AZ MiR
**AZ nLOF
*Edge bead removal
|colspan="2" style="background:WhiteSmoke; color:black"|
*Coating of E-beam resists
** CSAR, ZEP, PMMA/MMA, HSQ(FOx)
*Coating of UV resists
**AZ5214E, AZ4562, AZMiR701, AZnLOF, SU-8
*Coating of imprint resists
|style="background:WhiteSmoke; color:black"|
*Coating of
**SU-8
**mr-DWL
**other resists
OBS: this tool is in PolyFabLab
|style="background:WhiteSmoke; color:black"|
*Spraying imprint resist
*Spraying photoresist
*Spraying of other solutions
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Substrate handling
|style="background:LightGrey; color:black"|Substrate handling
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Cassette-to-cassette  
* Cassette-to-cassette
* Edge handling chuck
* Vacuum handling and detection
* Vacuum spin chuck
|style="background:WhiteSmoke; color:black"|
* Cassette-to-cassette
* Vacuum handling and detection
* Vacuum spin chuck
|style="background:WhiteSmoke; color:black"|
* Cassette-to-cassette
* Vacuum handling and detection
* Vacuum spin chuck  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Single substrate
* Single substrate
* Non-vacuum chuck for fragile substrates
* Vacuum chuck for 4" and 6"
* 4" non-vacuum chuck for fragile substrates
|colspan="2" style="background:WhiteSmoke; color:black"|
* Single substrate
* Vacuum chucks for chips, 2", 4", and 6"
* 4" edge handling chuck
|style="background:WhiteSmoke; color:black"|
* Single substrate
* Vacuum chucks for chips, 4", and 6"
|style="background:WhiteSmoke; color:black"|
Can handle almost any sample size and shape
|-
|-
|style="background:LightGrey; color:black"|Permanent media
|style="background:LightGrey; color:black"|Permanent media
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AZ5214E resist
* AZ MiR 701 (29cps) resist
* AZ4562 resist
* AZ nLOF 2020 resist
* Acetone for chuck cleaning
* AZ 5214E resist
* Acetone for drip pan
* PGMEA solvent for backside rinse and spinner bowl cleaning
|style="background:WhiteSmoke; color:black"|
* DUV42S-6 (BARC)
* KRF M230Y resist
* KRF M35G resist
* PGMEA solvent for edge bead removal and backside rinse
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR) for 2", 4", and 6"
* AZ5214E for 2", 4", and 6"
* AZ MiR 701 (29cps) for 4", and 6"
* AZ4562 for 4", and 6"
* PGMEA solvent for edge bead removal, backside rinse, and spinner bowl cleaning
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AZ5214E resist
No permanent media
* PGMEA for edge bead removal
|colspan="2" style="background:WhiteSmoke; color:black"|Only manual dispense
* Acetone for chuck cleaning
|style="background:WhiteSmoke; color:black"|Only manual dispense
|style="background:WhiteSmoke; color:black"|
No permanent media
|-
|-
|style="background:LightGrey; color:black"|Manual dispense option
|style="background:LightGrey; color:black"|Manual dispense option
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* 2 automatic syringes
* no manual dispense
* syringe dispense (60cc) of PGMEA-based resist
|style="background:WhiteSmoke; color:black"|
* no manual dispense
* syringe dispense (60cc) of PGMEA and anisole-based resist
|style="background:WhiteSmoke; color:black"|
* no manual dispense
* syringe dispense (30cc) of PGMEA and anisole-based resist (2" only)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* yes
* yes
* pneumatic dispense for SU8 resist
* pneumatic dispense for SU-8 resist and EBR solvent <span style="color:red">OBS: disabled 2024</span>
|colspan="2" style="background:WhiteSmoke; color:black"|Only manual dispense
|style="background:WhiteSmoke; color:black"|Only manual dispense
|style="background:WhiteSmoke; color:black"|
Two syringe pumps
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:LightGrey; color:black"|Spindle speed
|style="background:WhiteSmoke; color:black"|
10 - 6000 rpm
|style="background:WhiteSmoke; color:black"|
10 - 6000 rpm
|style="background:WhiteSmoke; color:black"|
10 - 6000 rpm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
10 - 5000 rpm (3000 rpm with non-vacuum chuck)
|colspan="2" style="background:WhiteSmoke; color:black"|
100 - 8000 rpm (3000 rpm with edge handling chuck)
|style="background:WhiteSmoke; color:black"|
100 - 8000 rpm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
 
|style="background:LightGrey; color:black"|Gyrset
|style="background:WhiteSmoke; color:black"|
no
|style="background:WhiteSmoke; color:black"|
no
|style="background:WhiteSmoke; color:black"|
no
|style="background:WhiteSmoke; color:black"|
optional (max. speed 3000 rpm)
|colspan="2" style="background:WhiteSmoke; color:black"|
no
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
no
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate  size
|style="background:WhiteSmoke; color:black"|
*50 mm wafers (tool change required)
*100 mm wafers
*150 mm wafers
*200 mm wafers (tool change required)
|style="background:WhiteSmoke; color:black"|
*100 mm wafers
*150 mm wafers
*200 mm wafers (may require tool change)
|style="background:WhiteSmoke; color:black"|
*2" or 50 mm wafers
*100 mm wafers
*150 mm wafers
|style="background:WhiteSmoke; color:black"|
*100 mm wafer
*150 mm wafer
|colspan="2" style="background:WhiteSmoke; color:black"|
*50 mm wafers
*100 mm wafers
*150 mm wafer
*small pieces down to 5x5 mm2
|style="background:WhiteSmoke; color:black"|
*100 mm wafers
*150 mm wafer
*small pieces down to 5x5 mm2
|style="background:WhiteSmoke; color:black"|
Any sample(s) that fit inside machine
|-
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>24</nowiki> 50 mm wafers
1 - 25
*<nowiki>24</nowiki> 100 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>24</nowiki> 150 mm wafers
1 - 25
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> 100 mm wafers
1 - 25
*<nowiki>1</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
1
|colspan="2" style="background:WhiteSmoke; color:black"|
1
|style="background:WhiteSmoke; color:black"|
1
|style="background:WhiteSmoke; color:black"|
1
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Silicon
*Allowed material 2
*Glass
 
'''No resist or crystalbond allowed in the HMDS module'''
|style="background:WhiteSmoke; color:black"|
*Silicon
*Glass
|style="background:WhiteSmoke; color:black"|
*Silicon
*III-V materials
*Glass
 
'''No resist or crystalbond allowed in the HMDS module'''
|style="background:WhiteSmoke; color:black"|
All cleanroom materials except III-V materials
|colspan="2" style="background:WhiteSmoke; color:black"|
*Silicon
*III-V materials
*Glass
|style="background:WhiteSmoke; color:black"|
All PolyFabLab materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*All chemicals to be spray coated must be approved specifically for spray coating
*Allowed material 2
*Any non-toxic, non-particulate and non-crosslinking material is likely to be approved
*Allowed material 3
|-  
|-  
|}
|}
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<br clear="all" />
<br clear="all" />


==SSE Spinner==
=Spin coating=
[[Image:SSEspinner2.jpg|200 × 200px|thumb|right|The SSE spinner MAXIMUS: positioned in Cleanroom 13.]]
The typical spin coating process consists of the following steps:
#Priming (typically HMDS) followed by cooling to room temperature
#Resist dispense (rotation: static or dynamic rotation)(arm: stationary or moving)
#*Optional: Acceleration to a low spin speed if dynamic dispense is used
#*Optional: Resist spreading at low spin speed for spreading thicker resists
#Spin-off
#Backside rinse (typically during spin-off)
#Optional: Edge-bead removal
#Softbake (contact or proximity)
#Cooling to room temperature
 
 
After priming, the wafer is cooled to room temperature and then transferred to the spin coater. If static dispense is used, the wafer is not rotating during the resist dispense. In the case of dynamic dispense, the wafer rotates at low spin speed during the dispense. The dispense arm is normally stationary during dispense, but some substrates may require the arm to move slowly across the substrate area while dispensing. Moving arm dispensing is usually only done with a rotating substrate.
 
Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off.  
 
==Spin-off==
The spin-off cycle determines the thickness of the resist coating. For a given resist, the thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law:


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#SSE_Spinner click here]'''
<math>y = k \sdot x^{-a}</math>


The SSE spinner MAXIMUS: positioned in Cleanroom 13.
The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.
SSE Spinner, Maximus 804, SSE Sister Semiconductor Equipment is a resist spinning system at Danchip which can be used for spinning on 2", 4" and 6" substrates.  


The system is equipped with 2 different resists lines:
The coated thickness, <math>t</math>, as a function of the spin-off speed, <math>w</math>, follows an inverse power-law:
*AZ5214E and
*AZ4562 and
*2 syringe lines, which can be used for spinning of e-beam resist.


The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager
<math>t=k \sdot w^{-a}</math>


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The constant, <math>k</math>, is a function of the resist viscosity and solid content, as well as the spin-off time. The exponent, <math>a</math>, is dependent on solvent evaporation, and is typically ~½ for UV resists. This means that from the thickness <math>t_1</math> achieved at spin speed <math>w_1</math>, one can estimate the spin speed <math>w_2</math> needed to achieve thickness <math>t_2</math> using the relation:
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==Spin Track 1 + 2==
<math>t_1 \sdot w_1^{1/2} = t_2 \sdot w_2^{1/2} \rArr w_2 = w_1 \sdot \frac{t_1^2}{t_2^2}</math>


[[image:SpinTrack.jpg|300x257px|right|thumb|Spin Track 1 + 2 in Cleanroom 3]]


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Track_1_.2B_2 click here]'''
For thick SU-8, however, <math>a</math> is observed to be ~1 (probably due to the low solvent content and/or the formation of skin). In this case, the relation simply becomes:
<!-- Replace "http://labadviser.danchip.dtu.dk/..." wih the link to the Labadviser page-->


Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.
<math>t_1 \sdot w_1 = t_2 \sdot w_2 \rArr w_2 = w_1 \sdot \frac{t_1}{t_2}</math>


The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used.
==Backside rinse==
If the spin speed is too low during resist dispense, resist may creep over the edge of the wafer and onto the backside. Some resist tend to leave fine strings of resist protruding from the edge of the wafer, or folded onto the backside, an effect sometimes referred to as "cotton candy".  


'''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=313 LabManager]'''
Any resist on the edge and backside of the wafer will contaminate the end effector, softbake hotplate, and subsequent wafers.  
<!-- remember to remove the type of documents that are not present -->
=== Equipment performance and process related parameters ===


{| border="2" cellspacing="0" cellpadding="2"
In a backside rinse step, solvent administered through a nozzle to the backside of the wafer, while spinning at low or medium spin speed, dissolves the resist and washes it away. After the rinse, a short spin at medium spin speed dries the wafer before the softbake.


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Spin Track
During the backside rinse solvent inevitably creeps onto the front side of the wafer. This effect may be used to dissolve and subsequently remove an edge-bead, but it may also leave the rim of the wafer exposed. As an alternative to backside rinse, a wafer, which is contaminated on the backside, may be softbaked in proximity, in order to protect the hotplate from contamination. This leaves front side coating intact, but also leaves the backside dirty.
|style="background:WhiteSmoke; color:black"|<b>1</b>
|style="background:WhiteSmoke; color:black"|<b>2</b>
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*HMDS priming
*Spin coating
*Soft baking
|style="background:WhiteSmoke; color:black"|
*HMDS priming
*Spin coating
*Soft baking
*Post-exposure baking
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ MiR 701 (29cps)


positive
==Edge bead==
|style="background:WhiteSmoke; color:black" align="center"|
During spin coating, resist builds up at the edge of the wafer due to the change in surface tension at the edge, as well as extra drying from turbulence created by the wafer edge.
AZ nLOF 2020


negative
This phenomenon is called edge-bead. Dependent on spin coating parameters, the coating may be several times thicker at the edge than in the central area. In a subsequent hard contact exposure step (mask aligner), this edge-bead introduces an undesired proximity gap, which reduces the lateral resolution, and may even cause the wafer to stick to the mask.
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black" align="center"|
1 - 3 µm
|style="background:WhiteSmoke; color:black" align="center"|
1.6 - 5 µm
|-
|style="background:LightGrey; color:black"|HMDS contact angle
|style="background:WhiteSmoke; color:black" align="center"|
~ 60 - 90° (SiO2)  
|style="background:WhiteSmoke; color:black" align="center"|
~ 60 - 90° (SiO2)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameters
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black" align="center"|
10 - 9990 rpm
|style="background:WhiteSmoke; color:black" align="center"|
10 - 9990 rpm
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black" align="center"|
1000 - 50000 rpm/s
|style="background:WhiteSmoke; color:black" align="center"|
1000 - 50000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black" align="center"|
90°C
|style="background:WhiteSmoke; color:black" align="center"|
110°C
|-
|style="background:LightGrey; color:black"|HMDS priming temperature
|style="background:WhiteSmoke; color:black" align="center"|
50°C
|style="background:WhiteSmoke; color:black" align="center"|
50°C
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
100 mm wafers
|style="background:WhiteSmoke; color:black" align="center"|
100 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Silicon
*Glass
|style="background:WhiteSmoke; color:black"|
*Silicon
*Glass
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1 - 25
|style="background:WhiteSmoke; color:black" align="center"|
1 - 25
|-
|}


<br clear="all" />
In an edge-bead removal step, solvent administered through a nozzle positioned at the edge of the wafer, while spinning at low or medium spin speed, dissolves the resist and washes it away. After the removal, a short spin at medium spin speed dries the wafer before the softbake. Dependent on the viscosity (solvent content) of the resist after the edge-bead removal, this drying spin may cause the resist to re-flow and create a secondary edge-bead. In some cases, it may be necessary to (partially) softbake the resist before edge-bead removal.


===Process information===
==Softbake==
After spin coating, the solvent in the resist must be evaporated in a baking step, in order to solidify the resist. This softbake can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface, either in direct contact on the manual hotlpates or by resting on shallow bumps 150 µm above the hotplate in the Gamma tools. In a proximity bake, the wafer is first moved into proximity, e.g. 1mm, of the hotplate surface, then held there (on the lift pins) for the duration of the bake.


Link to process pages - e.g. one page for each material
=Spin coaters at DTU Nanolab=


Example:
{{:Specific Process Knowledge/Lithography/Coaters/GammaUV}}
*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2|Etch of silicon using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2|Etch of silicon oxide using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE|Etch of silicon nitride using RIE]]
*[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of photo resist using RIE]]


==KS Spinner==
{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}
[[Image:KSspinner.JPG|200×200px|left|thumb|The KS spinner is placed in Cleanroom 3.]]


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{{:Specific Process Knowledge/Lithography/Coaters/GammaEbeam}}
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{{:Specific Process Knowledge/Lithography/Coaters/RCD8}}


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{{:Specific Process Knowledge/Lithography/Coaters/labspin}}
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{{:Specific Process Knowledge/Lithography/Coaters/labspin04}}


==Manual Spinner 1 (Laurell)==
{{:Specific Process Knowledge/Lithography/Coaters/sprayCoater}}
[[Image:Opticoat.jpg|200×200px|right|thumb|The Manual Spinner(Polymers) is placed in fumehood in Cleanroom 3.]]


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=Decommisioned tools=
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<span style="color:red">The spin track was decommissioned 2018-02-01.</span>


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[[Specific Process Knowledge/Lithography/Coaters/Spin_Track_1_%2B_2_processing|Information about decommissioned tool can be found here.]]
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