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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip click here]'''
{{cc-nanolab}}


= Strip Comparison Table =
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
{| border="2" cellspacing="0" cellpadding="2"
 
[[Category: Equipment|Lithography strip]]
[[Category: Lithography|Strip]]


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
__TOC__
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Acetone Strip|Acetone Strip]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b>


= Strip Comparison Table =
{| class="wikitable"
|-
!
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4 (Clean)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose  
! scope=row style="text-align: left;" | Purpose  
|style="background:LightGrey; color:black"|
| Resist descum
|style="background:WhiteSmoke; color:black"|
|
All purposes
*Resist stripping
|style="background:WhiteSmoke; color:black"|
*Resist descum
Clean wafers only, no metal
|
|style="background:WhiteSmoke; color:black"|
*Resist stripping
III-V materials only
*Resist descum
|style="background:WhiteSmoke; color:black"|
| Resist stripping
Resist strip
| Metal lift-off
|style="background:WhiteSmoke; color:black"|
Resist strip or lift-off
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Method
! scope=row style="text-align: left;" | Method
|style="background:LightGrey; color:black"|
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
Plasma ashing
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
Plasma ashing
| Solvent & ultrasonication
|style="background:WhiteSmoke; color:black"|
Plasma ashing
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
! scope=row style="text-align: left;" | Process gasses
|style="background:LightGrey; color:black"|Process gasses
| O<sub>2</sub> (50 sccm)
|style="background:WhiteSmoke; color:black"|
|
*O<sub>2</sub> (0 - 400 sccm)
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub>
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub>
|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub>
*N<sub>2</sub> (0-500 sccm)
*N<sub>2</sub>
*CF<sub>4</sub> (0-200 sccm)
|style="background:WhiteSmoke; color:black"|
| NA
*O<sub>2</sub>
| NA
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Max. process power
! scope=row style="text-align: left;" | Process power
|style="background:WhiteSmoke; color:black"|
| 10-100 W (10-100%)
*1000 W
| 150-1000 W
|style="background:WhiteSmoke; color:black"|
| 150-1000 W
*1000 W
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*100%
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Solvent
! scope=row style="text-align: left;" | Process solvent
|style="background:WhiteSmoke; color:black"|
| NA
*NA
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*NA
|
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*Acetone
|style="background:WhiteSmoke; color:black"|
*Acetone
*NMP (Remover 1165)
*NMP (Remover 1165)
 
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate batch
|style="background:LightGrey; color:black"|Batch size
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1
*1 - 30 100 mm wafers
|
*1 - 30 150 mm wafers
*Chips: several
|style="background:WhiteSmoke; color:black"|
*50 mm wafer: several
*1 small sample
*100 mm wafer: 1-25
*1 50 mm wafer
*150 mm wafer: 1-25
*1 - 30 100 mm wafers
*200 mm wafer: 1-25
*1 - 30 150 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1-25
*1 100 mm wafer
*150 mm wafer: 1-25
|style="background:WhiteSmoke; color:black"|
*200 mm wafer: 1-25
*1 - 25 100 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*100 mm wafer: 1-25
*1 - 25 100 mm wafers
*150 mm wafer: 1-25
 
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Substrate materials
|style="background:WhiteSmoke; color:black"|
|
*Si and silicon oxide, silicon nitride
*<span style="color:red">'''No polymer substrates'''</span><br>
*Quartz, pyrex
*Silicon substrates
*Metal patterning
*III-V substrates
|style="background:WhiteSmoke; color:black"|
*Glass substrates
*No metal!
*Films, or patterned films, of any material except type IV (Pb, Te)
*Si and silicon oxide, silicon nitride
|
*Quartz, pyrex
*<span style="color:red">'''No metals'''</span><br>
|style="background:WhiteSmoke; color:black"|
*<span style="color:red">'''No metal oxides'''</span><br>
*III-V compounds
*<span style="color:red">'''No III-V materials'''</span><br>
|style="background:WhiteSmoke; color:black"|
*Silicon substrates
*Si and silicon oxide, silicon nitride
*Glass substrates
*Quartz, pyrex
*Polymer substrates
|style="background:WhiteSmoke; color:black"|
*Films, or patterned films, of resists/polymers
*Si and silicon oxide, silicon nitride
|
*Quartz, pyrex
*Silicon substrates
*All metals
*III-V substrates
|-  
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates (only if clean)
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


=Plasma Asher 1 =
= Plasma Ashing process parameters=
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in C-1]]


The Plasma Asher1( 300 auto load model) can be used for the following process:
{| class="wikitable"
 
*Photoresist stripping
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers
 
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
 
 
==Process Information==
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]]
 
 
==Overview of typical processes==
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Photoresist stripping
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
|'''Process pressure'''
|0.8- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|O<sub>2</sub>, N<sub>2</sub>
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
|O<sub>2</sub>
|-
|-
|'''Process power'''
! scope=row style="text-align: left;" | Process pressure
|600-1000W
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|150-300W
|1000W or less for heat- sensitive materials
|-
|-
|'''Process time'''
! scope=row style="text-align: left;" | Process gasses
|5-60min, depending of photoresist thickness
|
|a few seconds to a few minutes
*O<sub>2</sub> (100 sccm)
|Between 0.5 and 20 hours, depending on the material
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
|-
|'''Batch size'''
! scope=row style="text-align: left;" | Process power
|1-10 wafers at a time
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|1 wafer at a time
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
|-
|-
|'''Size of substrate'''
! scope=row style="text-align: left;" | Process time
|2"-6"  
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|2"-6"
|2"-6"
|-
|'''Allowed materials'''
|All
|All
|All
 
|-
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1 || 1
|}
|}


<br clear="all" />
<br clear="all" />


A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}


=Plasma Asher 2 =
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]


The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}


In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}


The typical process parameters when operating the equipment:
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
*Photeresist stripping
Pressure: 0.8 - 1.0 mbar


Gas: O2
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


Power: 600 - 1000 watts
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]


Time: 5 -30 min., depending on photoresist type and thickness


A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
At a load at 2 Fused silicawafers resist removed 0.01-01,5um
 
The other materials have not been tested yet.
 
=III-V Plasma Asher =
 
 
=Acetone Strip=
 
[[Image:Lift-off wet bench.JPG|300x300px|thumb|Acetone strip bench in D-3]]
 
{| border="1" cellspacing="0" cellpadding="4" align="right"
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
|-
|}
 
This acetone strip is only for wafers without metal and SU-8.
 
There are two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
 
 
'''Here are the main rules for acetone strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />
=Overview of acetone benches=
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Acetone strip
! Lift-off
|-
|'''General description'''
|
wet stripping of resist
|
lift-off process
|-
|'''Chemical solution'''
|CH<sub>3</sub>COCH<sub>3</sub>
|CH<sub>3</sub>COCH<sub>3</sub>
|-
|'''Process temperature'''
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|-
|'''Batch size'''
|
1-25 wafers at a time
|
1-25 wafer at a time
|-
|'''Size of substrate'''
|
4" wafers
|
4" wafers
|-
|'''Allowed materials'''
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
*All metals
|-
|}
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