Jump to content

Specific Process Knowledge/Lithography/Strip: Difference between revisions

← Older edit
VisualWikitext
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
No edit summary
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,871 edits
 
(297 intermediate revisions by 11 users not shown)
Line 1: Line 1:
= Comparison table =
{{cc-nanolab}}
{| border="2" cellspacing="0" cellpadding="2"


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#EVG Aligner|EVG Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>


[[Category: Equipment|Lithography strip]]
[[Category: Lithography|Strip]]
__TOC__
= Strip Comparison Table =
{| class="wikitable"
|-
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose
!
|style="background:LightGrey; color:black"|  
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4 (Clean)]]
*TS and BS Alignment
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
*UV exposure
! [[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]
|style="background:WhiteSmoke; color:black"|
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
*TS and BS Alignment
|-
*UV exposure
! scope=row style="text-align: left;" | Purpose
|style="background:WhiteSmoke; color:black"|
| Resist descum
*TS Alignment
*UV exposure
|
|
 
*Resist stripping
|-
*Resist descum
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 1.0µm
|style="background:WhiteSmoke; color:black"|
*1.25µm
|style="background:WhiteSmoke; color:black"|
|
|
 
*Resist stripping
*Resist descum
| Resist stripping
| Metal lift-off
|-
|-
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
! scope=row style="text-align: left;" | Method
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
* 350W Hg-lamp, 365nm filter, 303nm filter optional
| Plasma ashing
* intensity in Constant Intensity(CI) mode 7mJ/cm2
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
* 350W Hg-lamp, SU8 filter, 365nm filter optional
| Solvent & ultrasonication
* intensity in Constant Intensity(CI) mode 7mJ/cm2
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|-
|style="background:LightGrey; color:black"|Exposure mode
! scope=row style="text-align: left;" | Process gasses
|style="background:WhiteSmoke; color:black"|
| O<sub>2</sub> (50 sccm)
*proximity, soft, hard, vacuum contact
|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*proximity, soft, hard, vacuum contact
*N<sub>2</sub> (0-500 sccm)
*proximity, soft, hard, vacuum contact
|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*  
*N<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
*CF<sub>4</sub> (0-200 sccm)
*
| NA
 
| NA
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
! scope=row style="text-align: left;" | Process power
|style="background:LightGrey; color:black"|Positive Process
| 10-100 W (10-100%)
|style="background:WhiteSmoke; color:black"|
| 150-1000 W
*
| 150-1000 W
|style="background:WhiteSmoke; color:black"|
| NA
*
| NA
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|-
|style="background:LightGrey; color:black"|Negative Process
! scope=row style="text-align: left;" | Process solvent
|style="background:WhiteSmoke; color:black"|
| NA
*
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*
|
|style="background:WhiteSmoke; color:black"|
*NMP (Remover 1165)
*
*IPA (rinsing agent)
|style="background:WhiteSmoke; color:black"|
|
*
*NMP (Remover 1165)
 
*IPA (rinsing agent)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate batch
|style="background:LightGrey; color:black"|Batch size
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*<nowiki>1</nowiki> small samples
*50 mm wafer: several
*<nowiki>1</nowiki> 50 mm wafers
*100 mm wafer: 1
*<nowiki>1</nowiki> 100 mm wafers
|
*<nowiki>1</nowiki> 150 mm wafers
*Chips: several
|style="background:WhiteSmoke; color:black"|
*50 mm wafer: several
*<nowiki>1</nowiki> 50 mm wafers
*100 mm wafer: 1-25
*<nowiki>1</nowiki> 100 mm wafers
*150 mm wafer: 1-25
*<nowiki>25</nowiki> 150 mm wafers with automatic handling
*200 mm wafer: 1-25
|style="background:WhiteSmoke; color:black"|
|
*<nowiki>1</nowiki> small samples
*Chips: several
*<nowiki>1</nowiki> 50 mm wafers
*50 mm wafer: several
*<nowiki>1</nowiki> 100 mm wafers
*100 mm wafer: 1-25
*<nowiki>1</nowiki> 150 mm wafers
*150 mm wafer: 1-25
|style="background:WhiteSmoke; color:black"|
*200 mm wafer: 1-25
*
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Substrate materials
|style="background:WhiteSmoke; color:black"|
|
*Si and silicon oxide, silicon nitride
*<span style="color:red">'''No polymer substrates'''</span><br>
*Quartz, pyrex
*Silicon substrates
|style="background:WhiteSmoke; color:black"|
*III-V substrates
*Si and silicon oxide, silicon nitride
*Glass substrates
*Quartz, pyrex
*Films, or patterned films, of any material except type IV (Pb, Te)
|style="background:WhiteSmoke; color:black"|
|
*III-V compounds
*<span style="color:red">'''No metals'''</span><br>
|style="background:WhiteSmoke; color:black"|
*<span style="color:red">'''No metal oxides'''</span><br>
*
*<span style="color:red">'''No III-V materials'''</span><br>
|-  
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates (only if clean)
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


= Plasma Ashing process parameters=


 
{| class="wikitable"
=Plasma asher 1 =
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]
 
The Plasma Asher1( 300 auto load model) can be used for the following process:
 
*Photoresist stripping
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers
 
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
 
 
==Overview of typical processes==
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Photoresist stripping
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
|'''Process pressure'''
|0.8- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|O<sub>2</sub>, N<sub>2</sub>
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
|O<sub>2</sub>
|-
|-
|'''Process power'''
! scope=row style="text-align: left;" | Process pressure
|600-1000W
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|150-300W
|1000W or less for heat- sensitive materials
|-
|-
|'''Process time'''
! scope=row style="text-align: left;" | Process gasses
|5-60min, depending of photoresist thickness
|  
|a few seconds to a few minutes
*O<sub>2</sub> (100 sccm)
|Between 0.5 and 20 hours, depending on the material
*N<sub>2</sub> (100 sccm)
|-
|
|'''Batch size'''
*O<sub>2</sub> (45 sccm)
|1-10 wafers at a time
|
|1 wafer at a time
*O<sub>2</sub> (100 sccm)
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
|-
|'''Size of substrate'''
! scope=row style="text-align: left;" | Process power
|2"-6"  
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|2"-6"
|2"-6"
|-
|-
|'''Allowed materials'''
! scope=row style="text-align: left;" | Process time
|All
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|All
|All
 
|-
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1 || 1
|}
|}


<br clear="all" />
<br clear="all" />


{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}


{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}


{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}


A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
 
=Plasma asher 2 =
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]
 
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
 
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
 
The typical process parameters when operating the equipment:
*Photeresist stripping
Pressure: 0.8 - 1.0 mbar
 
Gas: O2


Power: 600 - 1000 watts
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}


Time: 5 -30 min., depending on photoresist type and thickness
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.  
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]


A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
At a load at 2 Fused silicawafers resist removed 0.01-01,5um


The other materials have not been tested yet.
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
==Acetone strip with ultrasound==
{| border="1" cellspacing="0" cellpadding="4" align="right"
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
|-
|}
 
This acetone strip is only for wafers without metal and SU-8!
 
There is two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
 
 
'''Here are the main rules for acetone strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />
=Lift-off wet bench=
[[Image:Acetone_lift-off.jpg|300x300px|thumb|Acetone lift-off: positioned in cleanroom 3]]
This bench is only for wafers with metal!
Here are the main rules for lift-off bench use:
*Place the wafers in a dedicated wafer holder.
*Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
*Rinse your wafers for 4-5 min. in running water after stripping.
Find more info about the lift-off process here: [[Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process]]
<br clear="all" />
=Overview of acetone benches=
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Acetone strip
! Lift-off
|-
|'''General description'''
|
wet stripping of resist
|
lift-off process
|-
|'''Chemical solution'''
|CH<sub>3</sub>COCH<sub>3</sub>
|CH<sub>3</sub>COCH<sub>3</sub>
|-
|'''Process temperature'''
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|-
|'''Batch size'''
|
1-25 wafers at a time
|
1-25 wafer at a time
|-
|'''Size of substrate'''
|
4" wafers
|
4" wafers
|-
|'''Allowed materials'''
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
*All metals
|-
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Strip"