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__TOC__
__TOC__


=Plasma Asher 1=
= Descum Comparison Table =
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
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=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
 
=Plasma Asher 3: Descum=
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
 
'''Process parameters'''<br>
You can manipulate two different descum process development parameters: you can either change power or chamber pressure.
 
==Power testing - AZ MiR 701==
[[image:AZMIR701_power_settings.png|400px|thumb|Descum results for different power settings]]
 
'''Recipe settings:'''
*Resist: AZ MiR 701
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied
 
{| class="wikitable" style="text-align: center;"
|+ style="caption-side: top; text-align: left;" | Experiment parameters
|-
!  !! Forward/reverse !! C2/C1 !! Power
|-
| style="text-align: left;" | '''recipe 1''' || 50/0 || 52/31 || 50%
|-
| style="text-align: left;" | '''recipe 2''' || 100/0 || 53/31 || 100%
|-
| style="text-align: left;" | '''recipe 3''' || 20/0 || 51/34 || 20%
|}
 
==Pressure testing - AZ MiR 701==
[[image:AZMIR701_pressure_settings.png|400px|thumb|Descum results for different pressure settings]]
 
'''Recipe settings:'''
*Resist: AZ MiR 701
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
{| class="wikitable" style="text-align: center;"
|+ style="caption-side: top; text-align: left;" | Experiment parameters
|-
!  !! Forward/reverse !! C2/C1 !! Oxygen !! Pressure
|-
| style="text-align: left;" | '''recipe 1''' || 100/0 || 52/31 || 5 || 0.2
|-
| style="text-align: left;" | '''recipe 2''' || 100/0 || 37/38 || 45 || 0.8
|}
 
==Pressure testing - AZ 5214E==
[[image:AZ5214E_pressure_settings.png|400px|thumb|Descum results for different pressure settings]]
 
'''Recipe settings:'''
*Resist: AZ 5214E
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
{| class="wikitable" style="text-align: center;"
|+ style="caption-side: top; text-align: left;" | Experiment parameters
|-
!  !! Forward/reverse !! C2/C1 !! Oxygen !! Pressure
|-
| style="text-align: left;" | '''recipe 1''' || 100/0 || 52/31 || 17 || 0.4
|-
| style="text-align: left;" | '''recipe 2''' || 100/0 || 37/39 || 45 || 0.8
|}
 
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=Plasma Asher 4=
Descum of AZ 5214E on 100 mm wafers. The descum process development was done for a single substrate, as well as 3 substrates (for decreased ashing rate and improved ashing uniformity). The substrates were placed vertically in the glass boat.
 
<gallery style="text-align: center;" widths=250 heights=250>
PA_boat_1Wafer_v2.png|Single vertical substrate
PA_boat_3Wafer_v2.png|3 vertical substrates
</gallery>
 
For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. The wafers were placed in consecutive slots - when running multiple wafers in this way, the first and last wafers should always be dummy wafers.
 
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
 
'''Typical descum parameters'''<br>
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 200 W
*Chamber temperature at start (with door closed): 30°C
*Time (single wafer): 5-10 minutes = 35-72 nm ashed
*Time (multiple wafers): 10-15 minutes = 40-80 nm ashed
 
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Center of 3 substrates
!
|-
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
! scope=row| Test results
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
| Ashing rate: 5.7 ±2.1 nm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 nm/min<br>Non-uniformity: 0.4 ±0.2%
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
|-
! scope=row| Wafers
| 1 || 3
|-
! scope=row| Wafer size
| 100 mm || 100 mm
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Purpose
| Center of chamber || Center of chamber
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Method
| Center of boat || Center of boat
| Plasma ashing
| Plasma ashing
| Plasma ashing
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Process gasses
| 200 sccm || 200 sccm
| O<sub>2</sub> (50 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Process power
| 50% N<sub>2</sub> || 50% N<sub>2</sub>
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Substrate batch
| 1.3 mbar || 1.3 mbar
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Substrate materials
| 200 W || 200 W
|
|-
*<span style="color:red">'''No polymer substrates'''</span><br>
! scope=row| Test processing time
*Silicon substrates
| Tested parameter || Tested parameter
*III-V substrates
|-
*Glass substrates
! scope=row| Test average temperature
*Films, or patterned films, of any material except type IV (Pb, Te)
| 33°C || 33°C
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
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==Single wafer descum ashing rate and uniformity for plasma asher 4 & 5==
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}
[[File:PA_descum_single_v3.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]]
 
{| class="wikitable" style="text-align: center;"
|+ style="caption-side: top; text-align: left;" | Ashing amount and rate
|-
! style="text-align: left;" | Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| style="text-align: left;" | Ashing amount [nm]: || 5.2 || 6.2 || 35.1 || 72.3 || 87.1
|-
| style="text-align: left;" | Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8
|}
 
{| class="wikitable" style="text-align: center;"
|+ style="caption-side: top; text-align: left;" | Ashing non-uniformity
|-
! style="text-align: left;" | Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| style="text-align: left;" | Pre-descum film thickness range [nm]: || 11 || 12 || 10 || 11 || 9
|-
| style="text-align: left;" | Pre-descum non-uniformity [%]: || 0.37 || 0.40 || 0.33 || 0.37 || 0.30
|-
| style="text-align: left;" | Post-descum film thickness range [nm]: || 10 || 10 || 12 || 19 || 33
|-
| style="text-align: left;" | Post-descum non-uniformity [%]: || 0.33 || 0.33 || 0.41 || 0.66 || 1.18
|}


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{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}


==Multi wafer descum ashing rate and uniformity for plasma asher 4 & 5==
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}
[[File:PA_descum_multi_v3.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]]


{| class="wikitable" style="text-align: center;"
=Decommisioned tools=
|+ style="caption-side: top; text-align: left;" | Ashing amount and rate
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
|-
! style="text-align: left;" | Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| style="text-align: left;" | Ashing amount [nm]: || 4.3 || 6.7 || 10.1 || 39.5 || 78.8
|-
| style="text-align: left;" | Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3
|}


{| class="wikitable"  style="text-align: center;"
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
|+ style="caption-side: top; text-align: left;" | Ashing non-uniformity
|-
! style="text-align: left;" | Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| style="text-align: left;" | Pre-descum film thickness range [nm]: || 11 || 13 || 11 || 12 || 14
|-
| style="text-align: left;" | Pre-descum non-uniformity [%]: || 0.37 || 0.43 || 0.37 || 0.40 || 0.46
|-
| style="text-align: left;" | Post-descum film thickness range [nm]: || 11 || 9 || 10 || 12 || 21
|-
| style="text-align: left;" | Post-descum non-uniformity [%]: || 0.37 || 0.30 || 0.33 || 0.41 || 0.74
|}


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==Comparison between single substrate processing and multi substrate processing for plasma asher 4 & 5==
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
Processing a single substrate using the standard descum settings will provide users with a relatively controllable and uniform process. Adding dummy substrates in close proximity with the process substrate will reduce the ashing rate and improve the uniformity:
<gallery mode="packed-hover" heights="150">
PA_descum_compareAmount_v1.png|Ashing amount
PA_descum_compareRate_v1.png|Ashing rate
PA_descum_compareUniformity_v1.png|Non-uniformity
</gallery>


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
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=Plasma Asher 5=
Plasma asher 5 is identical to plasma asher 4, see descum processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|here]].
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Descum"