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__TOC__
__TOC__


=Plasma Asher 1=
= Descum Comparison Table =
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
{| class="wikitable"
 
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
 
=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
 
=Plasma Asher 3: Descum=
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
 
 
'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
 
 
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|640px|thumb|Descum results for different power settings]]
 
'''Recipe settings:'''
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
!
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
|-
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
! scope=row style="text-align: left;" | Purpose
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
|-
|-
|}
! scope=row style="text-align: left;" | Method
|}
| Plasma ashing
<br clear="all" />
| Plasma ashing
 
| Plasma ashing
 
'''Testing different pressure settings:'''
[[image:AZMIR701_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
|-
|-
|}
! scope=row style="text-align: left;" | Process power
|}
| 10-100 W (10-100%)
<br clear="all" />
| 150-1000 W
 
| 150-1000 W
'''Ashing of AZ5214E resist:'''
[[image:AZ5214E_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
 
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-  
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
! scope=row style="text-align: left;" | Substrate batch
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
|}
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


=Plasma Asher 4=
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}
==Descum processing in plasma asher 4 & 5==
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.


The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}


{| class="wikitable"
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}
|-
! Test setup !! Single substrate !! Center of 3 substrates
|-
! scope=row| Test results
| Ashing rate: 5.7 ±2.1 nm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 nm/min<br>Non-uniformity: 0.4 ±0.2%
|-
! scope=row| Wafers
| 1 || 3
|-
! scope=row| Wafer size
| 100 mm || 100 mm
|-
! scope=row| Boat position
| Center of chamber || Center of chamber
|-
! scope=row| Test wafer position
| Center of boat || Center of boat
|-
! scope=row| Total gas flow rate
| 200 sccm || 200 sccm
|-
! scope=row| Gas mix ratio
| 50% N<sub>2</sub> || 50% N<sub>2</sub>
|-
! scope=row| Chamber pressure
| 1.3 mbar || 1.3 mbar
|-
! scope=row| Power
| 200 W || 200 W
|-
! scope=row| Test processing time
| Tested parameter || Tested parameter
|-
! scope=row| Test average temperature
| 33°C || 33°C
|}


<br clear="all" />
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[File:PA_descum_single_v2.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]]
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
'''Single wafer processing'''<br>
{| class="wikitable"
|-
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| Ashing amount [nm]: || 5.2 || 6.2 || 35.1 || 72.3 || 87.1
|-
| Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8
|-
| Film thickness range, before descum [nm]: || 11 || 12 || 10 || 11 || 9
|-
| Pre-ashing non-uniformity [%]: || 0.37 || 0.40 || 0.33 || 0.37 || 0.30
|-
| Film thickness range, after descum [nm]: || 10 || 10 || 12 || 19 || 33
|-
| Post-ashing non-uniformity [%]: || 0.33 || 0.33 || 0.41 || 0.66 || 1.18
|}


<br clear="all" />


[[File:PA_descum_multi_v2.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]]
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
'''Multi wafer processing'''<br>
{| class="wikitable"
|-
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15
|-
| Ashing amount [nm]: || 4.3 || 6.7 || 10.1 || 39.5 || 78.8
|-
| Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3
|-
| Film thickness range, before descum [nm]: || 11 || 13 || 11 || 12 || 14
|-
| Post-ashing non-uniformity [%]: || 0.37 || 0.43 || 0.37 || 0.40 || 0.46
|-
| Film thickness range, after descum [nm]: || 11 || 9 || 10 || 12 || 21
|-
| Post-ashing non-uniformity [%]: || 0.37 || 0.30 || 0.33 || 0.41 || 0.74
|}


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />
=Plasma Asher 5=
<span style="color:red">Coming soon</span>
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Descum"