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==UV resist comparison table==
==UV resist comparison table==
Comparison of specifications and feature space of UV photoresists.
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab.


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{| class="wikitable"  
|-
|-
 
! scope=row| Resist
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/TIspray|TI Spray]]
|-
|-
|-style="background:silver; color:black"
! scope=row| Resist tone
!Resist
|  
|'''[[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]'''
|'''[[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]]'''
|'''[[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]]'''
|'''[[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]'''
|'''[[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]'''
|'''[[Specific_Process_Knowledge/Lithography/TIspray|TI Spray]]'''
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Resist tone
|
*Positive
*Positive
*Negative (image reversal)
*Negative (image reversal)
|Positive
| Positive
|Negative
| Negative
|Positive
| Positive
|Negative
| Negative
|
|  
*Positive
*Positive
*Negative (image reversal)
*Negative (image reversal)
|-
|-
! scope=row| Thickness range
| 1.5 - 4.2 µm || 1.5 - 4 µm || 1.5 - 4 µm  || 5 - 10 µm || 1 - 200 µm || 0.5 - 5 µm
|-
! scope=row| Coating tool
|
Automatic spin coaters:
*Spin coater: Gamma UV lithography
*Spin coater: Gamma E-beam & UV


|-style="background:silver; color:black"
Manual spin coaters:
!Thickness range
* Spin coater: Labspin 02
|1.5 - 4.2 µm
* Spin coater: Labspin 03
|1.5 - 4 µm
* Spin coater: RCD8
|1.5 - 4 µm
|5 - 10 µm
|1 - 200 µm
|0.5 - 5 µm
|-


|-
Spray coater
|-style="background:WhiteSmoke; color:black"
|  
!Coating tool
Automatic spin coaters:
|
Automatic coaters:<br>
*Spin coater: Gamma UV lithography
*Spin coater: Gamma UV lithography
*Spin coater: Gamma ebeam & UV
*Spin coater: Gamma E-beam & UV  


Manual coaters:<br>
Manual spin coaters:
*Spin coater: Labspin 2
* Spin coater: Labspin 02
*Spin coater: Labspin 3
* Spin coater: Labspin 03
*Spin coater: RCD8
* Spin coater: RCD8
*Spray coater
|
Automatic coaters:<br>
*Spin coater: Gamma UV lithography
*Spin coater: Gamma ebeam & UV


Manual coaters:<br>
Spray coater
*Spin coater: Labspin 2
|  
*Spin coater: Labspin 3
Automatic spin coaters:
*Spin coater: RCD8
*Spray coater
|
Automatic coaters:<br>
*Spin coater: Gamma UV lithography
*Spin coater: Gamma UV lithography


Manual coaters:<br>
Manual spin coaters:
*Spin coater: Labspin 2
* Spin coater: Labspin 02
*Spin coater: Labspin 3
* Spin coater: Labspin 03
*Spin coater: RCD8
* Spin coater: RCD8
*Spray coater
|
Automatic coaters:<br>
*Spin coater: Gamma ebeam & UV


Manual coaters:<br>
*Spin coater: Labspin 2
*Spin coater: Labspin 3
*Spin coater: RCD8
|
Manual coaters:<br>
*Spin coater: RCD8
or
*Spin coater: Labspin 2
*Spin coater: Labspin 3
|
Spray coater
Spray coater
|-
|  
Automatic spin coaters:
*Spin coater: Gamma E-beam & UV


Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Spray coater
|-
|-
|-style="background:Silver; color:black"
! scope=row| Spectral sensitivity
!Spectral sensitivity
| 310 - 420 nm || 310 - 445 nm || 310 - 380 nm || 310 - 445 nm || 300 - 375 nm || 310 - 440 nm
|310 - 420 nm
|310 - 445 nm
|310 - 380 nm
|310 - 445 nm
|300 - 375 nm
|310 - 440 nm
|-
|-
 
! scope=row| Exposure tool
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|-
! scope=row| Developer
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* [[Specific_Process_Knowledge/Lithography/nLOF#Development|Solvent development possible]]
|
AZ 726 MIF (2.38% TMAH)
|
mr-DEV 600 (PGMEA)
|
AZ 726 MIF (2.38% TMAH)
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Development rinse agent
!Exposure tool
| DIW || DIW || DIW || DIW || IPA || DIW
|align="center" colspan="6"|Mask aligner or Maskless aligner
|-
|-
 
! scope=row| Remover
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
Remover 1165 (NMP)
|
* Cross-linked SU-8 is practically insoluble
* Oxygen plasma ashing can remove cross-linked SU-8
|
* Acetone
* Remover 1165 (NMP)
|-
|-
|-style="background:silver; color:black"
! scope=row| Comments
!Developer
| Good adhesion for wet etch
| High selectivity for dry etch
| Negative sidewalls for lift-off
| For processes with resist thickness between 6 µm and 25 µm
|
|
*AZ 351B
* High aspect ratio
*AZ 726 MIF
* Resist thickness 1 µm to hundreds of µm
|
* Available in cleanroom: 2005, 2035, and 2075. Considering discontinuation of the SU-8 2000 series we need to move to another product SU8 3000 and SU8 XTF series.
*AZ 351B
* New formulation will be available in cleanroom and tested: 3005 instead of 2005, 3035 instead of 2035, XTF75 instead of 2075 and new 3025.
*AZ 726 MIF
| TI spray resist is an image reversal resist, similar to AZ 5214E. The process flow will be similar to the process flows for 5214, except for the coating step. The exposure dose and development will depend on the specific process.
|AZ 726 MIF
|}
|AZ 726 MIF
|mr-DEV 600 (PGMEA)
|AZ 726 MIF
|-


|-
<br clear="all" />
|-style="background:WhiteSmoke; color:black"
!Rinse
|DIW
|DIW
|DIW
|DIW
|IPA
|DIW
|-


|-
==Process flow examples==
|-style="background:silver; color:black"
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab. These are just examples and may contain obsolete information regarding exposure dose, etc.
!Remover
|
*Acetone
*Remover 1165
|
*Acetone
*Remover 1165
|
*Acetone
*Remover 1165
|
Remover 1165
|
Cured SU-8 is practically insoluble


Plasma ashing can remove crosslinked SU-8
{| class="wikitable"
|
*Acetone
*Remover 1165
|-
|-
 
! scope=row| Resist
! style="width: 15%;"| AZ 5214E
! style="width: 15%;"| AZ MIR 701
! style="width: 15%;"| AZ nLOF 2020
! style="width: 15%;"| AZ 4562
! style="width: 15%;"| SU-8
! style="width: 15%;"| Ti Spray
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Maskless aligner
!Comments
|
|
*Can be used for both positive and image reversed (negative) processes with resist thickness between 1 and 4 µm.
* [[media:‎process_flow_AZ_5214E_positive_MLA_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MLA]]
*Good adhesion for wet etch.
* [[media:process_flow_AZ_5214E_IR_MLA_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MLA]]
|
|
High selectivity for dry etch
[[media:process_flow_AZ_MiR_701_MLA_-_2023-02.docx‎|Process flow AZ MiR 701‎ MLA]]
|
|
Negative sidewalls for lift-off
[[media:process_flow_AZ_nLOF_2020_MLA_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MLA‎]]
|
|
For processes with resist thickness between 6 µm and 25 µm
[[media:process_flow_AZ_4562_MLA_-_2023-02.docx‎|Process flow AZ 4562 MLA]]
|
|
*High aspect ratio
[[media:process_flow_SU-8_MLA_-_2023-02.docx‎|Process flow SU-8 MLA‎]]
*Resist thickness 1 µm to several 100 µm
 
*Available in cleanroom: 2005, 2035, and 2075
NB! Most of the process knowledge about SU-8 is based in research groups
|
|
Spray coater specific resist
|-
|-
|-
|-style="background:silver; color:black"
! scope=row| Mask aligner
!Process flow examples
|
|
Mask aligner:<br>
* [[media:‎process_flow_AZ_5214E_positive_MA6_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MA6]]
[[media:‎process_flow_AZ_5214E_positive_MA6_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MA6]]<br>
* [[media:process_flow_AZ_5214E_IR_MA6_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MA6]]
[[media:process_flow_AZ_5214E_IR_MA6_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MA6]]
 
 
Maskless aligner:<br>
[[media:‎process_flow_AZ_5214E_positive_MLA_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MLA]]<br>
[[media:process_flow_AZ_5214E_IR_MLA_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MLA]]
|
|
Mask aligner:<br>
[[media:process_flow_AZ_MiR_701_MA6_-_2023-02.docx‎|Process flow AZ MiR 701‎ MA6]]
[[media:process_flow_AZ_MiR_701_MA6_-_2023-02.docx‎|Process flow AZ MiR 701‎ MA6]]
Maskless aligner:<br>
[[media:process_flow_AZ_MiR_701_MLA_-_2023-02.docx‎|Process flow AZ MiR 701‎ MLA]]
|
|
Mask aligner:<br>
[[media:process_flow_AZ_nLOF_2020_MA6_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MA6‎]]
[[media:process_flow_AZ_nLOF_2020_MA6_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MA6‎]]
Maskless aligner:<br>
[[media:process_flow_AZ_nLOF_2020_MLA_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MLA‎]]
|
|
Mask aligner:<br>
[[media:process_flow_AZ_4562_MA6_-_2023-02.docx‎|Process flow AZ 4562 MA6‎]]
[[media:process_flow_AZ_4562_MA6_-_2023-02.docx‎|Process flow AZ 4562 MA6‎]]
Maskless aligner:<br>
[[media:process_flow_AZ_4562_MLA_-_2023-02.docx‎|Process flow AZ 4562 MLA]]
|
|
Mask aligner:<br>
[[media:process_flow_SU-8_MA6_-_2023-02.docx‎|Process flow SU-8 MA6‎]]
[[media:process_flow_SU-8_MA6_-_2023-02.docx‎|Process flow SU-8 MA6‎]]


 
NB! Most of the process knowledge about SU-8 is based in research groups
Maskless aligner:<br>
[[media:process_flow_SU-8_MLA_-_2023-02.docx‎|Process flow SU-8 MLA‎]]
 
 
NB! Most of the process knowledge on SU-8 is based in research groups
|
|
TI spray resist is an image reversal resist, similar to AZ 5214E. The process flow will be similar to the process flows for 5214, except for the coating step. The exposure dose and development will depend on the specific process.
|}


|-
|}
<br>
'''Other process flows:'''
'''Other process flows:'''
[[Media:process_flow_chip_on_carrier_-_2023-02.docx|Chip on carrier]]: A procedure for UV lithography on a chip using automatic coater and developer.


[[Media:process_flow_chip_on_carrier_-_2023-02.docx|Chip on carrier]]: A procedure for UV lithography on a chip using automatic coater and developer.
<br clear="all" />
<br clear="all" />


==Exposure dose==
==Exposure dose==
[[Image:resistSensitivity_UV.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption coefficient.]]
[[Image:resistSensitivity_UV.png|400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption coefficient.]]


During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer.
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer.
Line 268: Line 240:


==Exposure dose for mask aligners==
==Exposure dose for mask aligners==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners|Information about the exposure dose for mask aligners can be found here.]]
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF).
 
 
===Aligner: MA6-1===
The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Dose
!Development
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ 5214E<br><span style="color:red">Data from discontinued German version</span>
|Long ago
|1.5 µm
|72 mJ/cm<sup>2</sup>
|rowspan="3"|Single puddle, 60 s
|rowspan="3"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|80 mJ/cm<sup>2</sup>
|-style="background:WhiteSmoke; color:black"
|Long ago
|4.2 µm
|160 mJ/cm<sup>2</sup>
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ 4562<br><span style="color:red">Data from discontinued German version</span>
|Long ago
|10 µm
|510 mJ/cm<sup>2</sup>
|Multiple puddle, 4 x 60 s
|Multiple exposure with 10-15 s pauses is recommended.
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ MiR 701<br><span style="color:red">Data from discontinued PFOA containing version</span>
|Long ago
|1 µm
|180 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|PEB: 60 s at 110°C
|-style="background:WhiteSmoke; color:black"
|Long ago
|2 µm
|200 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4 µm
|400 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="1"|PEB: 90 s at 110°C
|-
 
|-
|-style="background:LightGrey; color:black"
!AZ nLOF 2020
|Long ago
|2 µm
|110 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|PEB: 60 s at 110°C
Side wall angle ~15°
 
For smaller angle (~5°), develop 30 seconds instead
|}
 
===Aligner: MA6-2===
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
 
'''New resists'''<br>
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. The following table contains only information about the new resist versions.
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Dose
!Development
!Comments
|-
 
|-
|-style="background:whitesmoke; color:black"
!AZ MiR 701
|2023-09-26<br>taran
|1.5 µm
|150 mJ/cm<sup>2</sup>
(13.5s @ 11mW/cm<sup>2</sup>)
|Single puddle, 60 s
|PEB: 60 s @ 110°C
|-
 
|-
|-style="background:silver; color:black"
!AZ nLOF 2020
|2023-09-26<br>taran
|2 µm
|121 mJ/cm<sup>2</sup>
(11 s @ 11 mW/cm<sup>2</sup>)
|Single puddle, 60 s
|PEB: 60 s @ 110°C<br>60 s development for lift-off
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E
|2023-01-11<br>jehem
|1.5 µm
|70 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|
|-
 
|-
|-style="background:silver; color:black"
!AZ 5214E<br>Image Reversal
|2023-01-11<br>jehem
|2.2 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|
Reversal bake: 60 s at 110°C<br>
Flood exposure: 500 mJ/cm<sup>2</sup>
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 4562<br>
|2021-12-08<br>jehem
|10 µm
|550 mJ/cm<sup>2</sup>
|Multiple puddles, 5 x 60 s
|
Priming: HMDS<BR>
Rehydration after SB: 1 hour (may not be necessary)<br>
Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>
Degassing after exposure: 1 hour (may not be necessary)
|-
|}
<br clear="all" />


==Exposure dose for maskless aligners==
==Exposure dose for maskless aligners==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values.
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMasklessAligners|Information about the exposure dose for maskless aligners can be found here.]]
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF).
 
 
===Aligner: Maskless 01===
The Aligner: Maskless 01 has a 365 nm LED light source with a FWHM of 8 nm.
 
'''New resists'''<br>
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. The following table contains only information about the new resist versions.
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ MiR 701
| 2023-07-06<br>jehem
| 1.5 µm
| Fast
| 275 mJ/cm<sup>2</sup>
| 1
| 1 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C<br>Dev: SP60s
|-
 
|-
|-style="background:silver; color:black"
!AZ nLOF 2020
| 2023-07-06<br>jehem
| 2.0 µm
| Fast
| 180 mJ/cm<sup>2</sup>
| 0
| 1.5 µm
| PEB: 60s@110°C<br>Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E
| 2024-11-29<br>taran
| 1.5 µm
| Fast
| 105 mJ/cm<sup>2</sup>
| 3
| 1.75 µm
| Dev: SP60s
|-
 
|-
|-style="background:silver; color:black"
!AZ 5214E<br>image reversal
| <span style="color:red">2023-04-05</span><br>jehem
| 2.2 µm
| Fast
| <span style="color:red">possibly obsolete data</span><br>20 mJ/cm<sup>2</sup>
| <span style="color:red">possibly obsolete data</span><br>-2
| 2.0 µm
| Reversal bake: 60s@110°C,<br>Flood exposure: 500mJ/cm<sup>2</sup><br>Dev: SP60s
|-
 
|-
|-style="background:whitesmoke; color:black"
!AZ 4562
| <span style="color:red">2023-04-05</span><br>jehem
| 10 µm
| Fast
| <span style="color:red">possibly obsolete data</span><br>1050 mJ/cm<sup>2</sup>
| <span style="color:red">possibly obsolete data</span><br>-1
| ≤5 µm
|
Priming: HMDS<BR>
Rehydration after SB: 1 hour (may not be necessary)<br>
Exposure: Single exposure<br>
Degassing after exposure: 1 hour (may not be necessary)<br>
Development: Multiple puddles, 5 x 60 s
|-
 
|}
<br>
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.
 
<br clear="all" />
 
===Aligner: Maskless 02===
<!-- The Aligner: Maskless 02 has a 375 nm laser light source, and a 405 nm laser light source, each with a FWHM of ~1 nm. -->
The Aligner: Maskless 02 has a 375 nm laser light source with a FWHM of ~1 nm.
 
'''New resists'''<br>
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. The following table contains only information about the new resist versions.
 
'''New writehead'''<br>
As of 2023-03-21 the MLA2 has a new writehead installed, converting it from a write mode 1 tool to a write mode 2 tool. This makes all previous dose/defocus settings obsolete. The following table contains only the dose/defocus values for the new writehead.
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Laser
!Autofocus
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ MiR 701
|rowspan="2"| 2023-08-21 <br> taran
|rowspan="2"| 1.5 µm
|rowspan="2"| 375
| Optical
|rowspan="2"| Quality
|rowspan="2"| 325 mJ/cm<sup>2</sup>
| 1
|rowspan="2"| 1 µm<br>Tested using dehydration reducing measures<br>(design elongated +40mm in y).
|rowspan="2"|
PEB: 60s @ 110°C<br>
Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| Pneumatic
| ?
|-
 
|-
|-style="background:silver; color:black"
!rowspan="2"| AZ nLOF 2020
|rowspan="2"| 2023-08-21 <br> taran
|rowspan="2"| 2.0 µm
|rowspan="2"| 375
| Optical
|rowspan="2"| Quality
|rowspan="2"| 450 mJ/cm<sup>2</sup>
| 0
|rowspan="2"| 1.5 µm
|rowspan="2"|
PEB: 60s @ 110°C<br>
Dev: SP60s
|-style="background:silver; color:black"
| Pneumatic
| ?
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ 5214E
|rowspan="2"| 2024-12-09<br>taran
|rowspan="2"| 1.5 µm
|rowspan="2"| 375
| Optical
|rowspan="2"| Quality
|rowspan="2"| 100 mJ/cm<sup>2</sup>
| 2
|rowspan="2"| 1.5 µm
|rowspan="2"| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| Pneumatic
| -2 (?)
|-
 
|-
|-style="background:silver; color:black"
!rowspan="2"| AZ 5214E<br>image reversal
|rowspan="2"| 2023-04-17 <br> jehem
|rowspan="2"| 2.2 µm
|rowspan="2"| 375
| Optical
|rowspan="2"| Quality
|rowspan="2"| 35 mJ/cm<sup>2</sup>
| 0
|rowspan="2"| 1.5 µm
|rowspan="2"|
Reversal bake: 60s @ 110°C<br>
Flood exposure: 500 mJ/cm<sup>2</sup><br>
Dev: SP60s
|-style="background:silver; color:black"
| Pneumatic
| ?
|-
 
|-
|-style="background:whitesmoke; color:black"
!rowspan="2"| AZ 4562
|rowspan="2"| 2023-04-19<br>jehem
|rowspan="2"| 10 µm
|rowspan="2"| 375
| Optical
|rowspan="2"| Quality
|rowspan="2"| 1150 mJ/cm<sup>2</sup>
| 0
|rowspan="2"| ≤5 µm
|rowspan="2"|
Priming: HMDS<br>
Rehydration after softbake: 1 hour (may not be necessary)<br>
Exposure: Single exposure<br>
Degassing after exposure: 1 hour (may not be necessary)<br>
Development: Multiple puddles, 5 x 60 s
|-style="background:whitesmoke; color:black"
| Pneumatic
| ?
|-
 
|}
<br>
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.
 
<br clear="all" />
 
===Aligner: Maskless 03===
The Aligner: Maskless 03 has a 405 nm laser light source with a FWHM of ~1 nm.
 
'''New resists'''<br>
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. The following table contains only information about the new resist versions.
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Laser
!Autofocus
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ MiR 701
| 2023-06-30<br>jehem
| 1.5 µm
| 405
| Pneumatic
| Quality
| 175 mJ/cm<sup>2</sup>
| 0
| 1 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C<br>Dev: SP60s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E
| 2023-06-30<br>jehem
| 1.5 µm
| 405
| Pneumatic
| Quality
| 75 mJ/cm<sup>2</sup>
| 0
| 1 µm
| Dev: SP60s
|-
 
|-
|-style="background:silver; color:black"
!AZ 5214E<br>Image reversal
| 2023-06-30<br>jehem
| 2.2 µm
| 405
| Pneumatic
| Quality
| 50 mJ/cm<sup>2</sup>
| 0
| 1 µm
|
Reversal bake: 60s@110°C<br>
Flood exposure: 500mJ/cm<sup>2</sup><br>
Dev: SP60s
|-
 
|-
|-style="background:silver; color:black"
!AZ nLOF 2020
| 2023-06-30<br>jehem
| 2.0 µm
| 405
| Pneumatic
| Quality
| 9000 mJ/cm<sup>2</sup>
| 2
| 1 µm
|
PEB: 60s @ 100°C<br>
Dev: SP60s<br>
<span style="color:red">'''Due to the high dose required on this tool, it is recommended to process nLOF on tools with a more appropriate exposure light source'''</span>
|-
 
|-
|-style="background:whitesmoke; color:black"
!AZ 4562
| 2023-06-30<br>jehem
| 10 µm
| 405
| Pneumatic
| Quality
| 550 mJ/cm<sup>2</sup>
| 3
| ≤5 µm
|
Priming: HMDS<BR>
Rehydration after SB: 1 hour (may not be necessary)<br>
Exposure: Single exposure<br>
Degassing after exposure: 1 hour (may not be necessary)<br>
Development: Multiple puddles, 5 x 60 s
|-
 
|}
<br>
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.
 
<br clear="all" />


==Exposure dose when using AZ 351B developer (NaOH)==
==Exposure dose when using AZ 351B developer (NaOH)==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseNaOH|Information about the exposure dose when using AZ 351B developer can be found here.]]
 
All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5.
 
 
===KS Aligner (351B)===
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
|
!Date
!Thickness
!Dose
!Development]
!Comments
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ 5214E<br><span style="color:red">Data from discontinued German version</span>
|Long ago
|1.5 µm
|70mJ/cm<sup>2</sup>
|60 s
|rowspan="3"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|72 mJ/cm<sup>2</sup>
|70 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4.2 µm
|160 mJ/cm<sup>2</sup>
|180 s
|-
 
|-
|-style="background:LightGrey; color:black"
!rowspan="2"|AZ 5214E<br><span style="color:red">Data from discontinued German version</span>
|Long ago
|1.5 µm
|30 mJ/cm<sup>2</sup>
|60 s
|rowspan="2"|Image reversal process.
 
Reversal bake: 100s at 110°C.<br>Flood exposure after reversal bake: 210 mJ/cm<sup>2</sup>
|-style="background:LightGrey; color:black"
|Long ago
|2.2 µm
|35 mJ/cm<sup>2</sup>
|70 s
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!AZ 4562<br><span style="color:red">Data from discontinued German version</span>
|Long ago
|10 µm
|320 mJ/cm<sup>2</sup>
|5 minutes
|Multiple exposure with 10-15 s pauses is recommended.
|-
|}
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