Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions
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*[[/HfO2 deposition using ALD2| HfO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']] | *[[/HfO2 deposition using ALD2| HfO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']] | ||
*[[/AlN deposition using ALD2| AlN deposition using '''ALD 2 (PEALD)''']] | *[[/AlN deposition using ALD2| AlN deposition using '''ALD 2 (PEALD)''']] | ||
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*[[/Al2O3 deposition using plasma ALD2 at room temperature| Al<sub>2</sub>O<sub>3</sub> deposition using '''ALD 2 (PEALD)''' at room temperature]] | *[[/Al2O3 deposition using plasma ALD2 at room temperature| Al<sub>2</sub>O<sub>3</sub> deposition using '''ALD 2 (PEALD)''' at room temperature]] | ||
'''Obsolete process:''' | |||
*[[/SiO2 deposition using ALD2| SiO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']] | |||
==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||