Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions

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-'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon) click here]'''
+{{cc-nanolab}}
-==LPCVD (Low Pressure Chemical Vapor Deposition) PolySilicon==
+'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon) click here]'''
-[[Image:A4_Furnace_PolySi.jpg|300x300px|thumb|A4 Furnace PolySilicon (situated in cleanroom 2]]
-[[Image:E2.JPG|300x300px|thumb|E2 Furnace Poly-Silicon 6 inch (situated in cleanroom 2]]
-Danchip has two furnaces for deposition of LPCVD polysilicon: A new 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 4" or 6" wafers and an older 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 4" wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si" and "Furnace: LPCVD Poly-Silicon 6inch", respectively. Both furnaces are Tempress horizontal furnaces.
+[[Category: Equipment|Thin film LPCVD Poly]]
+[[Category: Furnaces|LPCVD Poly]]
+[[Category: Thin Film Deposition|LPCVD Poly]]
-The LPCVD polysilicon deposition is a batch process, where polySi is deposited on a batch of 25 or 50 wafers (6" polySi furnace) or 30 wafers (4" polySi furnace). The polySi has a good step coverage, and especially for standard polySi the film thickness is very uniform over the wafers.
+==Deposition of Silicon using LPCVD==
+[[Image:A4_Furnace_PolySi.jpg|300x300px|thumb|4" polysilicon furnace (B4) located in cleanroom B-1]]
+[[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located (E2) in cleanroom E-6]]
-The reactive gas is silane (SiH<sub>4</sub>). The dopant for boron doped polySi is BCl<sub>3</sub> (6" polySi furnace) or B<sub>2</sub>H<sub>6</sub> (4" polySi furnace), and for phosphorous doped polySi the dopant is PH<sub>3</sub>. For standard polysilion the deposition takes place at a temperature of 620 <sup>o</sup>C and a pressure of 200-250 mTorr. For amorphous polysilicon the deposition temperatures and thus the deposition rate are lower, and for boron and phosphorous doped polySi the deposition temperature is 600 <sup>o</sup>C - 620 <sup>o</sup>C depending on whether you use the 6" or the 4" polySi furnace. For phousphorous doped polySi the deposition rate is approximately ten times lower than for boron doped polySi. More process information about the process parameters can be found in the table below.
+DTU Nanolab has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) silicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous Si and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous Si, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. Both furnaces are Tempress horizontal furnaces.
-'''The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:'''
+The LPCVD silicon deposition is a batch process, where silicon is deposited on a batch of 25 or 50 wafers (6" polySi furnace) or 30 wafers (4" polySi furnace). The silicon has a good step coverage, and especially for standard polySi the film thickness is very uniform over the wafers.
-'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=86 4" LPCVD polysilicon furnace (B4)]'''
+The reactive gas is silane (SiH<sub>4</sub>). The dopant for boron doped polySi is BCl<sub>3</sub> - only available at request (6" polySi furnace) or B<sub>2</sub>H<sub>6</sub> (4" polySi furnace), and for phosphorous doped polySi the dopant is PH<sub>3</sub> (4" polySi furnace). For standard and doped polysilion the deposition takes place at a temperature of 600 <sup>o</sup>C - 620 <sup>o</sup>C and a pressure of 200-250 mTorr. For amorphous silicon the deposition temperature is lower, and thus the deposition rate is also lower. For phosphorus doped polySi the deposition rate is approximately ten times lower than for standard and boron doped polySi. Please check the cross contamination information in LabManager before you use any of the two furnaces.
-'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=291 6" LPCVD polysilicon furnace (E2)]'''
+'''The user manuals, quality control procedures and results, technical information and contact information can be found in LabManager:'''
+'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=86 4" LPCVD polysilicon furnace (B4)]'''
+'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=291 6" LPCVD polysilicon furnace (E2)]'''
+'''[https://labmanager.dtu.dk/d4Show.php?id=1926 Furnace computer manual]'''
+== Manual for the furnace computer to the A, B, C and E stack furnaces ==
+The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here:
+[[Media:Furnace computer manual.pdf|Manual for furnace computers for the A, B, C and E stack furnaces]]
 ==Process information==
-Please take a look at the process side for deposition of polysilicon using LPCVD:
-[[Specific Process Knowledge/Thin film deposition/Deposition of polysilicon/Deposition of polysilicon using LPCVD|Deposition of polysilicon using LPCVD]]
+*[[/Standard recipes, QC limits and results for the 4" polysilicon furnace|Deposition of polysilicon using the B4 4" polysilicon furnace]]
+*[[/Boron doped poly-Si and a-Si |Boron doped poly-Si and a-Si by using the B4 4" polysilicon furnace]]
+*[[/Phosphorous doped poly-Si|Phosphorous doped poly-Si using the B4 4" polysilicon furnace]]
+*[[/Standard recipes, QC limits and results for the 6" polysilicon furnace|Deposition of polysilicon using the E2 6" polysilicon furnace]]
+*[[/Boron doped poly-Si |Boron doped poly-Si using the E2 6" polysilicon furnace]]
 ==Overview of the performance of the LPCVD polysilicon processes and some process related parameters==
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 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
-|style="background:WhiteSmoke; color:black"|<b>4" LPCVD polysilicon furnace (B3)</b>
+|style="background:WhiteSmoke; color:black"|<b>4" LPCVD polysilicon furnace (B4)</b>
 |style="background:WhiteSmoke; color:black"|<b>6" LPCVD polysilicon furnace (E2)</b>
 |-
@@ Line 36: / Line 57: @@
 *Amorphous polySi
 *Boron doped polySi (B<sub>2</sub>H<sub>6</sub> dopant)
-*Phosphorus doped polySi
+*Phosphorus doped polySi (PH<sub>3</sub> dopant)
 |style="background:WhiteSmoke; color:black"|
-" furnace:
 *Standard polySi
 *Amorphous polySi
@@ Line 63: / Line 83: @@
 *Standard polySi: 620 <sup>o</sup>C
 *Amorphous polySi: 560-580 <sup>o</sup>C
+*Boron doped a-Si: 580 <sup>o</sup>C
+*Phosphorus doped a-Si: 580 <sup>o</sup>C
 *Boron doped polySi: 620 <sup>o</sup>C
 *Phosphorus doped polySi: 620 <sup>o</sup>C
@@ Line 74: / Line 96: @@
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*250 mTorr
+*200-250 mTorr
 |style="background:WhiteSmoke; color:black"|
 *150-220 mTorr
-The process pressure depends on the actual process
+The process pressure depends on the process
 |-
 |style="background:LightGrey; color:black"|Gas flows
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 *B<sub>2</sub>H<sub>6</sub>: 7 sccm
 *PH<sub>3</sub>: 7 sccm
-The silane (SiH<sub>4</sub>) flow depends on the actual process
 |style="background:WhiteSmoke; color:black"|
 *SiH<sub>4</sub>: 50-70 sccm
-*BCl<sub>1</sub>: 1 sccm
+*BCl<sub>3</sub>: 1 sccm
+The silane (SiH<sub>4</sub>) flow depends on the process
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-20 100 wafers
+*1-30 100 mm wafers
 Including a testwafer with ~110 nm oxide
 |style="background:WhiteSmoke; color:black"|
-*1-25 (or 50) 100 mm wafers
+*1-25 or 1-50 100 mm wafers
-*1-25 (or 50) 150 mm wafers
+*1-25 or 1-50 150 mm wafers
 Including a testwafer with ~110 nm oxide
 |style="background:WhiteSmoke; color:black"|
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 |-
 |}
+== Rules for storage and RCA cleaning of wafers to the B4 and E2 furnaces ==
+*[[Specific_Process_Knowledge/Thermal_Process/Storage_and_cleaning_of_wafer_to_the_A,_B,_C_and_E_stack_furnaces|Storage and cleaning of wafer to the B4 and E2 furnaces]]