Jump to content

Specific Process Knowledge/Pattern Design: Difference between revisions

← Older edit
VisualWikitext
Jehan (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891, Bureaucrats, danchip, Administrators
1,093 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,528 edits
 
(5 intermediate revisions by 2 users not shown)
Line 38: Line 38:
*Maskless aligner:
*Maskless aligner:
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]]
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]]
**[[Media:MLA alignmentMarks arrows.gds|Alignment marks with structures to assist in locating the marks during alignment (.gds)]]
**[[Media:MLA_alignmentMarks_arrows.cif|Alignment marks with structures to assist in locating the marks during alignment (.cif)]]
**[[Media:AlignmentMark KOH.gds|Alignment mark for multiple layers, Layer 1 for etch in KOH (.gds)]]
**[[Media:AlignmentMark_KOH.cif|Alignment mark for multiple layers, Layer 1 for etch in KOH (.cif)]]
<br>
<br>


===Alignment marks location===
===Alignment marks location===
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]]  
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]]  
*The mask's alignment marks for 4inch process:
**For Back Side Alignment (BSA) alignment marks must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).
**For Top Side Alignment (TSA) alignment marks must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.


*The mask's alignment marks for 6inch process:
*For Top Side Alignment (TSA) alignment marks should be located 35-80 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
**Both BSA and TSA must be located between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.
*For Back Side Alignment (BSA) alignment marks should be located 15-45 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
**Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.
<br>
<br>
=== Alignment marks for E-beam lithography ===
=== Alignment marks for E-beam lithography ===
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [Specific%20Process%20Knowledge/Lithography/EBeamLithography/JEOLAlignment for alignment here].
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOLAlignment|to e-beam alignment here]]
<br>
<br>
<br>
<br>
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Pattern_Design"