Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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[[Category: Equipment |Thermal C3]] | [[index.php?title=Category:Equipment|Thermal C3]] | ||
[[Category: Thermal process|C3]] | [[index.php?title=Category:Thermal process|C3]] | ||
[[Category: Furnaces|C3]] | [[index.php?title=Category:Furnaces|C3]] | ||
==Anneal-bond furnace (C3)== | ==Anneal-bond furnace (C3)== | ||
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*Silicon wafers | *Silicon wafers | ||
*Silicon wafers with layers of silicon oxide or silicon nitride | *Silicon wafers with layers of silicon oxide or silicon nitride | ||
*Wafers from the | *Wafers from the A1, A3, B-stack, C1 and E1 stack furnaces | ||
*Wafers from PECVD4 | *Wafers and samples from PECVD4 | ||
*Wafers from PECVD3 (without any | *Wafers and samples from PECVD3 (without any metals) | ||
*Wafers from Wafer Bonder 02 ( | *Wafers from Wafer Bonder 02 | ||
*Wafers from Wafer Bonder 03 (without any metals). Use new or dedicated/clean teflon sheets in the wafer bonder | |||
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