Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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[[Category: Equipment |Thermal C3]] | |||
[[Category: Thermal process|C3]] | [[index.php?title=Category:Equipment|Thermal C3]] | ||
[[Category: Furnaces|C3]] | [[index.php?title=Category:Thermal process|C3]] | ||
[[index.php?title=Category:Furnaces|C3]] | |||
==Anneal-bond furnace (C3)== | ==Anneal-bond furnace (C3)== | ||
[[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1]] | [[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]] | ||
The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler. | The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler. | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness and quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | *Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | ||
*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C) | *Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/C3 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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*Silicon wafers | *Silicon wafers | ||
*Silicon wafers with layers of silicon oxide or silicon nitride | *Silicon wafers with layers of silicon oxide or silicon nitride | ||
*Wafers from the | *Wafers from the A1, A3, B-stack, C1 and E1 stack furnaces | ||
*Wafers from PECVD4 | *Wafers and samples from PECVD4 | ||
*Wafers from PECVD3 (without any | *Wafers and samples from PECVD3 (without any metals) | ||
*Wafers from Wafer Bonder 02 ( | *Wafers from Wafer Bonder 02 | ||
*Wafers from Wafer Bonder 03 (without any metals). Use new or dedicated/clean teflon sheets in the wafer bonder | |||
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