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Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
===Wet etches:===
*[[Specific Process Knowledge/Etch/KOH Etch|KOH Etch]]
*[[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
 
===Dry etches:===
*[[/Si etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]]
*[[/Si etch using ASE|ASE (Advanced Silicon Etch)]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)]]
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch|IBE/IBSD Ionfab 300]]
 
==Comparison of KOH etch, wet PolySilicon etch, RIE etch, ASE etch and DRIE-Pegasus for etching of Silicon==
{| border="2" cellspacing="0" cellpadding="5" align="center"
!
! KOH
! PolySilicon etch
! RIE
! ASE
! DRIE-Pegasus
|- valign="top"
|'''General description'''
|
*Anisotropic etch in the (100)-plan
*High selectivity to the other plans
|
*Isotropic etch in Silicon and Polysilicon
|
*Can etch isotropic and anisotropic depending on the process parameters
*Anisotropic etch: vertical sidewalls independent of the crystal plans
|
*As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
*Good selectivity to photoresist
|
*State-of-the-art dry silicon etcher with atmospheric cassette loader
*Extremely high etch rate and advanced processing options
|-valign="top"
|'''Possible masking materials'''
|
*Silicon Nitride
*Silicon Oxide
|
*Photoresist
|
*Photoresist
*E-beam resist
*Silicon Oxide
*Silicon Nitride
*Aluminium
*Chromium (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
*Photoresist
*Silicon Oxide
*Silicon Nitride
*Aluminium
|
*Photoresist and zep resist
*Silicon Oxide
*Silicon Nitride
*Aluminium oxide
|- valign="top"
|'''Etch rate'''
|
*Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min
*Si(100) @70<sup>o</sup>C: ~0.7 µm/min
*Si(100) @60<sup>o</sup>C: ~0.4 µm/min
|
*~100-200 nm/min, highly dependent on doping level
|
*<40nm/min to >600nm/min depending on recipe parameters and mask design
|
*<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
|
*Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
|-valign="top"
|'''Size of substrate'''
|
*4" in our standard bath
*4", 2" in "Fumehood KOH"
|
*4" in our standard bath
|
*4" (or smaller with carrier)
|
*6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
|
*6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
|-valign="top"
|'''Batch size'''
|
*25 wafers at a time
*1-5 wafers in "Fumehood KOH"
|
*25 wafers at a time
|
*One wafer at a time
|
*One wafer at a time
|
*One wafer at a time but you can load a whole batch of 25 wafers and set up an individual for each one
|-valign="top"
|'''Allowed materials'''
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Other materials (only in "Fumehood KOH")
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
*Aluminium
*Chromium (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
*Aluminium
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*zep resist
*Aluminium oxide
|-


|}
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=This Part is under construction=
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Silicon click here]'''
<!-- Replace "http://labadviser.nanolab.dtu.dk/..." with the link to the Labadviser page-->
<!--Page reviewed by jmli 9/8-2022  -->
<!--Checked for updates on 21/10-2025 - ok/jmli -->
== Comparing silicon etch methods ==


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Silicon click here]'''
There are a broad variety of silicon etch methods at DTU Nanolab The methods are compared here to make it easier for you to compare and choose the one that suits your needs.  
<!-- Replace "http://labadviser.danchip.dtu.dk/..." with the link to the Labadviser page-->
 
== Comparing silicon etch methodes at Danchip [[Image:section under construction.jpg|70px]]==
 
There are a broad varity of silicon etch methodes at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.  


===Wet etches:===
===Wet etches:===
*[[Specific Process Knowledge/Etch/KOH Etch|KOH Etch]]
*[[Specific Process Knowledge/Etch/KOH Etch|Si Etch: KOH]]
*[[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
*[[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]


===Dry etches:===
===Dry etches:===
*[[/Si etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]]
*[[/Si etch using ASE|Si etch using ASE (Advanced Silicon Etch)]]
*[[/Si etch using ASE|ASE (Advanced Silicon Etch)]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus|Si etch using DRIE-Pegasus (Silicon Etch)]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)]]
*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Si etch|Si etch using IBE/IBSD Ionfab 300]]
*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]


==Compare the methodes for Si etching==
==Compare the methods for Si etching==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Etch/KOH Etch|KOH Etch]]
![[Specific Process Knowledge/Etch/KOH Etch|Si Etch]]
![[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
![[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]]
![[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Deep Reactive Ion Etch)]]
![[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)]]
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]]
Line 184: Line 42:
!Generel description
!Generel description
|
|
*Anisotropic etch in the (100)-plan
*Anisotropic etch in crystalline silicon
*High selectivity to the other plans
*High selectivity to the {111}-planes
*Anisotropic etch: vertical sidewalls independent of the crystal plans
|
*Isotropic etch in Silicon and Polysilicon
|
|
*Can etch isotropic and anisotropic depending on the process parameters
*Isotropic etch in crystalline silicon and polysilicon
|
|
*State-of-the-art dry silicon etcher with atmospheric cassette loader
*State-of-the-art dry silicon etcher with atmospheric cassette loader
*Good selectivity to photoresist
*Extremely high etch rate and advanced processing options
*Extremely high etch rate and advanced processing options
|
|
*As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
*Can etch isotropic and anisotropic depending on the process parameters and mask design
*Good selectivity to photoresist
*Good selectivity to photoresist
*The ASE is dedicated to polymer etch, which can affect the Si etch stability.
*The ASE open for same metal on the samples and SiO2 etching, which can affect the Si etch stability.
|
|
*This is dedicated to metal etch
*This is dedicated to metal etch. So fare only Si etch of nanostructures has been explored on the system.
|
|
*Primarily for pure physical etch by sputtering with Ar-ions
*Primarily for pure physical etch by sputtering with Ar-ions
Line 211: Line 67:
*Silicon Oxide
*Silicon Oxide
|
|
*Photoresist
*Photo-, DUV- and e-beamresist
|
*Photoresist
*E-beam resist
*E-beam resist
*Silicon Oxide
*Silicon Oxide
Line 221: Line 75:
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
|
*Photoresist and zep resist
*Photo-, DUV- and e-beamresist
*Silicon Oxide
*Silicon Oxide
*Silicon Nitride
*Silicon Nitride
*Aluminium oxide
*Aluminium oxide
|
|
*Photoresist
*Photo-, DUV- and e-beamresist
*Silicon Oxide
*Silicon Oxide
*Silicon Nitride
*Silicon Nitride
Line 250: Line 104:
|
|
*~100-200 nm/min, highly dependent on doping level
*~100-200 nm/min, highly dependent on doping level
|
*<40nm/min to >600nm/min depending on recipe parameters and mask design
|
|
*Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
*Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
Line 257: Line 109:
*<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
*<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
|
|
*
*Process dependent. The nano etch is in the range 59-311 nm/min
|
|
*
*Process dependent. Has been tested in the range 17-31 nm/min
|-
|-


Line 266: Line 118:
!Substrate size
!Substrate size
|
|
*25 wafers of 100mm in our 100mm bath
*<nowiki>#</nowiki>25 wafers of 100mm or 150nm in Si Etch 1 & 2
*1-5 wafers of 100mm or 50mm in "Fumehood KOH"
*<nowiki>#</nowiki>25 wafers of 100mm or 150nm and smaller samples in Si Etch 3 (fume hood)
*25 wafers of 100mm or 150mm in our 6" bath
|
|
*<nowiki>#</nowiki>25 100 mm wafers in our 100mm bath
*<nowiki>#</nowiki>#25 wafers of 100mm or 150nm mm wafers  
|
|
*As many small samples as can be fitted on the 100mm carrier.
*As many small samples as can be fitted on the 100mm carrier.
*1 100mm wafer (or smaller with carrier)
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
*1 150mm wafer (only when the system is set up for 150mm)  
*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)  
|
|
*As many small samples as can be fitted on a 100mm wafer
*As many small samples as can be fitted on a 100mm wafer
*1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*1 100 mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*1 150 mm wafers (only when the system is set up to 150mm)  
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm)  
|
|
*As many small samples as can be fitted on a 100mm wafer
*As many small samples as can be fitted on a 150mm wafer
*1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>5 50 mm wafers fitted on a 150mm wafer
*1 100 mm wafer
*<nowiki>#</nowiki>1 100 mm wafer on a 150mm wafer
*1 150 mm wafers (only when the system is set up to 150mm)
*<nowiki>#</nowiki>1 150 mm wafers (The system is normally set up to 150mm)  
|
*As many small samples as can be fitted on a 100mm wafer
*1 50 mm wafer fitted on a 100mm wafer
*1 100 mm wafer
*1 150 mm wafers (only when the system is set up to 150mm)  
|
|
*As many samples as can be securely fitted on a up to 200mm wafer
*As many samples as can be securely fitted on a up to 200mm wafer
*1 50 mm wafer
*<nowiki>#</nowiki>1 50 mm wafer with special carrier
*1 100 mm wafer
*<nowiki>#</nowiki>1 100 mm wafer with special carrier
*1 150 mm wafers  
*<nowiki>#</nowiki>1 150 mm wafers with special carrier
*1 200 mm wafer
*<nowiki>#</nowiki>1 200 mm wafer
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Other materials (only in "Si Etch 3 (fume hood))
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Silicon Oxide
*Allowed material 3
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
|
|
*Allowed material 1
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photo-, DUV- and e-beamresist
*Aluminium oxide
*Quartz/fused silica
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photo-, DUV- and e-beamresist
*Aluminium
*Quartz/fused silica
*Other metals if they cover less than 5% of the wafer area
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Photo-, DUV- and e-beamresist
*Allowed material 3
*PolySilicon
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
*Quartz/fused silica
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Silicon oxides
*Allowed material 3
*Silicon (oxy)nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}


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