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Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Silicon click here]'''
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== Comparing silicon etch methods ==
 
There are a broad variety of silicon etch methods at DTU Nanolab The methods are compared here to make it easier for you to compare and choose the one that suits your needs.
 
===Wet etches:===
===Wet etches:===
*[[Specific Process Knowledge/Etch/KOH Etch|KOH Etch]]
*[[Specific Process Knowledge/Etch/KOH Etch|Si Etch: KOH]]
*[[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
*[[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]


===Dry etches:===
===Dry etches:===
*[[/Si etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]]
*[[/Si etch using ASE|Si etch using ASE (Advanced Silicon Etch)]]
*[[/Si etch using ASE|ASE (Advanced Silicon Etch)]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus|Si etch using DRIE-Pegasus (Silicon Etch)]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)]]
*[[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Si etch|Si etch using IBE/IBSD Ionfab 300]]
*[[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
 
==Compare the methods for Si etching==
 
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Etch/KOH Etch|Si Etch]]
![[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
![[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Deep Reactive Ion Etch)]]
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]]
![[Specific Process Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
 
|-


==Comparison of KOH etch, wet PolySilicon etch, RIE etch, ASE etch and DRIE-Pegasus for etching of Silicon==
|-
{| border="2" cellspacing="0" cellpadding="5" align="center"
|-style="background:WhiteSmoke; color:black"
!
!Generel description
! KOH
! PolySilicon etch
! RIE
! ASE
! DRIE-Pegasus
|- valign="top"
|'''General description'''
|
|
*Anisotropic etch in the (100)-plan
*Anisotropic etch in crystalline silicon
*High selectivity to the other plans
*High selectivity to the {111}-planes
|
|
*Isotropic etch in Silicon and Polysilicon
*Isotropic etch in crystalline silicon and polysilicon
|
|
*Can etch isotropic and anisotropic depending on the process parameters
*State-of-the-art dry silicon etcher with atmospheric cassette loader
*Anisotropic etch: vertical sidewalls independent of the crystal plans
*Good selectivity to photoresist
*Extremely high etch rate and advanced processing options
|
|
*As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
*Can etch isotropic and anisotropic depending on the process parameters and mask design
*Good selectivity to photoresist
*Good selectivity to photoresist
*The ASE open for same metal on the samples and SiO2 etching, which can affect the Si etch stability.
|
|
*State-of-the-art dry silicon etcher with atmospheric cassette loader
*This is dedicated to metal etch. So fare only Si etch of nanostructures has been explored on the system.
*Extremely high etch rate and advanced processing options
|
|-valign="top"
*Primarily for pure physical etch by sputtering with Ar-ions
|'''Possible masking materials'''
|-
 
|-
|-style="background:LightGrey; color:black"
!Possible masking materials
|
|
*Silicon Nitride
*Silicon Nitride
*Silicon Oxide
*Silicon Oxide
|
|
*Photoresist
*Photo-, DUV- and e-beamresist
|
*Photoresist
*E-beam resist
*E-beam resist
*Silicon Oxide
*Silicon Oxide
Line 50: Line 75:
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
|
*Photoresist
*Photo-, DUV- and e-beamresist
*Silicon Oxide
*Silicon Nitride
*Aluminium oxide
|
*Photo-, DUV- and e-beamresist
*Silicon Oxide
*Silicon Oxide
*Silicon Nitride
*Silicon Nitride
*Aluminium
*Aluminium
|
|
*Photoresist and zep resist
*Photo-, DUV- and e-beamresist
*Silicon Oxide
*Silicon Oxide
*Silicon Nitride
*Silicon Nitride
*Aluminium oxide
*Aluminium
|- valign="top"
*Cr
|'''Etch rate'''
*Ti
|
*Any material that is accepted in the machine
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Etch rate range
|
|
*Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min
*Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min
Line 68: Line 105:
*~100-200 nm/min, highly dependent on doping level
*~100-200 nm/min, highly dependent on doping level
|
|
*<40nm/min to >600nm/min depending on recipe parameters and mask design
*Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
|
|
*<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
*<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
|
|
*Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
*Process dependent. The nano etch is in the range 59-311 nm/min
|-valign="top"
|'''Size of substrate'''
|
|
*4" in our standard bath
*Process dependent. Has been tested in the range 17-31 nm/min
*4", 2" in "Fumehood KOH"
|-
 
|-
|-style="background:LightGrey; color:black"
!Substrate size
|
|
*4" in our standard bath
*<nowiki>#</nowiki>25 wafers of 100mm or 150nm in Si Etch 1 & 2
*<nowiki>#</nowiki>25 wafers of 100mm or 150nm and smaller samples in Si Etch 3 (fume hood)
|
|
*4" (or smaller with carrier)
*<nowiki>#</nowiki>#25 wafers of 100mm or 150nm mm wafers
|
|
*6" (when it is set up for 6") and 4" (or smaller if you have a carrier)  
*As many small samples as can be fitted on the 100mm carrier.
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
*<nowiki>#</nowiki>1 150mm wafer (only when the system is set up for 150mm)  
|
|
*6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
*As many small samples as can be fitted on a 100mm wafer
|-valign="top"
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
|'''Batch size'''
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm)  
|
|
*25 wafers at a time
*As many small samples as can be fitted on a 150mm wafer
*1-5 wafers in "Fumehood KOH"
*<nowiki>#</nowiki>5 50 mm wafers fitted on a 150mm wafer
*<nowiki>#</nowiki>1 100 mm wafer on a 150mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (The system is normally set up to 150mm)
|
|
*25 wafers at a time
*As many samples as can be securely fitted on a up to 200mm wafer
|
*<nowiki>#</nowiki>1 50 mm wafer with special carrier
*One wafer at a time
*<nowiki>#</nowiki>1 100 mm wafer with special carrier
|
*<nowiki>#</nowiki>1 150 mm wafers with special carrier
*One wafer at a time
*<nowiki>#</nowiki>1 200 mm wafer
|
|-
*One wafer at a time but you can load a whole batch of 25 wafers and set up an individual for each one
|-style="background:WhiteSmoke; color:black"
|-valign="top"
!'''Allowed materials'''
|'''Allowed materials'''
|
|
*Silicon
*Silicon
Line 106: Line 150:
*Silicon Nitride
*Silicon Nitride
*Silicon Oxynitride
*Silicon Oxynitride
*Other materials (only in "Fumehood KOH")
*Other materials (only in "Si Etch 3 (fume hood))
|
|
*Silicon
*Silicon
Line 118: Line 162:
*Silicon Nitride
*Silicon Nitride
*Silicon Oxynitride
*Silicon Oxynitride
*Photoresist
*Photo-, DUV- and e-beamresist
*E-beam resist
*Aluminium oxide
*Aluminium
*Quartz/fused silica
*Chromium (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
|
*Silicon
*Silicon
Line 128: Line 170:
*Silicon Nitride
*Silicon Nitride
*Silicon Oxynitride
*Silicon Oxynitride
*Photoresist
*Photo-, DUV- and e-beamresist
*E-beam resist
*Aluminium
*Aluminium
*Quartz/fused silica
*Other metals if they cover less than 5% of the wafer area
|
|
*Silicon
*Silicon
*Silicon Oxide
*Photo-, DUV- and e-beamresist
*Silicon Nitride
*PolySilicon
*Silicon Oxynitride
*Silicon oxide
*Photoresist
*Silicon (oxy)nitride
*zep resist
*Aluminium
*Aluminium oxide
*Titanium
|-
*Chromium
 
*Quartz/fused silica
|}
 
=This Part is under construction=
 
'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography click here]'''
<!-- Replace "http://labadviser.danchip.dtu.dk/..." with the link to the Labadviser page-->
 
== Comparing silicon etch methodes at Danchip ==
 
There are a broad varity of silicon etch methodes at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.
 
*[[/Deposition of silicon nitride using LPCVD|Process description using methode 1]]
<!-- Link to the process info page in LabAdviser -->
 
*[[/Deposition of silicon nitride using LPCVD|Process description using methode 2]]
<!-- Link to the process info page in LabAvdiser -->
 
==Comparison methode 1 and methode 2 for the process==
 
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
 
|-
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Etch/KOH Etch|KOH Etch]]
![[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
![[/Si etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]]
![[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)]]
![[/Si etch using ASE|ASE (Advanced Silicon Etch)]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]]
![[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
 
 
 
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|
|
*Anisotropic etch in the (100)-plan
*Silicon
*High selectivity to the other plans
*Silicon oxides
*Anisotropic etch: vertical sidewalls independent of the crystal plans
*Silicon (oxy)nitrides
|
*Metals from the +list
*Isotropic etch in Silicon and Polysilicon
*Metals from the -list
|
*Alloys from the above list
*Can etch isotropic and anisotropic depending on the process parameters
*Stainless steel
|
*Glass
|
*III-V materials
*As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
*Resists
*Good selectivity to photoresist
*Polymers
 
*Capton tape
|-
 
|-
|-style="background:LightGrey; color:black"
!Pattern size range
|
*~1µm and up
|
*~200nm and up
|
*~10nm and up
|
*~20nm and up
|
*3D ?nm
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Resist type
|
*UV sensitive:
**AZ
**SU8
|
*DUV sensitive
**fff
|
*E-beam sensitive
**ZEP502A (positive)
**HSQ (negative)
**SU8
|
*Imprint polymers:
**??
|
*?? sensitive:
**??
|-
|-
|-style="background:LightGrey; color:black"
!Resist thickness range
|
*~0.5µm to 20µm?
|
*~50nm to 2µm?
|
*~30nm to 0.5 µm
|
*~20nm to 10µm?
|
*?nm - ?µm
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Typical exposure time
|
2s-30s pr. wafer
|
?-? pr. ?
|
?-? pr. µm2
|
? pr. wafer
|
? pr. µm2
|-
 
 
|-
|-style="background:LightGrey; color:black"
!Substrate size
|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|
We have cassettes that fit to
*<nowiki>#</nowiki> 4 small samples (20mm, 12mm, 8mm, 4mm)
*<nowiki>#</nowiki> 6 wafers of 50 mm in size
*<nowiki>#</nowiki> 2 wafers of 100 mm in size
*<nowiki>#</nowiki> 1 wafer of 150 mm in size
|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|
*Allowed material 1
*Allowed material 2
|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|
*Si, SiO2, III-V materials
|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|-
|-
|}
|}


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