Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

In 2010 DTU Nanolab acquired DRIE-Pegasus 1. As a state-of-the-art etch tool with excellent performance and great flexibility, it grew immensely popular and by 2015 it was apparent that we needed yet another tool to cope with the demand. Therefore, in 2016 Pegasus 2 was acquired from a closed-down lab and installed next to Pegasus 1.

Looking to expand our dry etching capabilities in 2017 we got an irresistible offer on a twin Pegasus system with cassette to cassette vacuum robot from a commercial fab. The twin Pegasus system (called Pegasus 3 and 4) is installed at the old cluster 2 location in cleanroom C1 and will run only 6" wafers. Pegasus 3 is the 6" silicon etch work horse and Pegasus 4 is converted (adding extra process gases) into a 6" dielectric etch tool that will supplement/replace the AOE.  

|width="100"| [[file:DRIE-Pegasus.jpg |100px|frameless]]

| width="200"| [[file:Pegasus 2 operator.jpg |204px|frameless]]

| width="275"|[[file:Peg3and4 front 2.JPG |292px|frameless]]

|-  

| align="center" | The DRIE-Pegasus 1 load lock and cassette loader in the DTU Nanolab cleanroom A-1. {{photo1}}

| align="center" | The DRIE-Pegasus 2 operator station and load lock in the DTU Nanolab cleanroom A-1. {{photo1}}

| align="center" | The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations. {{photo1}}

The DRIE Pegasus tools are state-of-art silicon dry etchers that offer outstanding performance in terms of etch rate, uniformity etc. They use the so-called Bosch process to achieve excellent control of the etched features. Click [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/System-description|'''HERE''']] to access the top of the page. The contents are:

# [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/System-description#Modification_of_the_showerhead | Modification of the showerhead ]]

# [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/System-description#RF_Matching | RF matching ]]

## [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/System-description#RF_matching_in_general | RF matching in general ]]

# [[Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope|Picoscope process monitoring]]

As of 2017, completing the [[LabAdviser/Courses/TPT_Dry_Etch| Dry Etch TPT course]] is mandatory for all new users. On the TPT web page you will find a version of the latest lecture slides - here you will find information as well.

* [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-3|DRIE-Pegasus 3]]

* [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4|DRIE-Pegasus 4]]

{| border="2" cellspacing="0" cellpadding="1"  

!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  

!style="background:silver; color:black;" align="center" valign="center" width="100" rowspan="2"|Purpose  

|style="background:Whitesmoke; color:black" width="80" | Primary

* silicon

* Depending on the recipe

* Depending on the recipe

* SF₆-1: 0 to 1200 sccm

* SF₆-2: 0 to 100 sccm

*SF₆: ?(<20) sccm

*O₂: 200 sccm

*C₄F₈: 400 sccm

*Ar: 283 sccm

*He: 500 sccm

*CF₄: 100 sccm

* Silicon,Oxides and nitrides

===Process notation===

 

 

 

 

 

| style="background:lightgrey; color:black" | 2010

| style="background:lightgrey; color:black" | 2010

| style="background:WhiteSmoke; color:black" | MP0636

| style="background:WhiteSmoke; color:black"|  

The trenches in deep silicon trenches can be characterized in many ways. Being able to compare processes requires that a set of common measurements and calculations must be established. Click '''HERE''' to find more information about the parameters used on the DRIE-Pegasus process developme[[Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation|nt]].