Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions

← Older edit
VisualWikitext
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,565 edits
No edit summary
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,565 edits
No edit summary
 
(5 intermediate revisions by 2 users not shown)
Line 2: Line 2:
<!--Checked for updates on 2/10-2020 - ok/jmli -->
<!--Checked for updates on 2/10-2020 - ok/jmli -->
<!--Checked for updates on 28/6-2023 - ok/jmli -->
<!--Checked for updates on 28/6-2023 - ok/jmli -->
<!--Checked for updates on 21/10-2025 - ok/jmli -->


{{contentbydryetch}}
{{contentbydryetch}}
Line 107: Line 109:
|}
|}


== Process A acceptance test==
== Process A test==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->
<!--Checked for updates on 28/6-2023 - ok/jmli -->
 
{{contentbydryetch}}


Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.
Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.
Line 237: Line 234:
|-
|-
|Etch rate in Si
|Etch rate in Si
|21 - 28 µm/min
|16 - 18.8 µm/min
|-
|-
|Non-uniformity
|Non-uniformity
Line 345: Line 342:
image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area
image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area
image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area
image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area
Without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform.
</gallery>
</gallery>
 
''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).''
<br><br>
<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">
<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains.
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA"