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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA click here]'''
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== Effects on Process A of showerhead change in December 2014 ==
== Effects on Process A of showerhead change in December 2014 ==
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The effects of [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|changing of the showerhead in December 2014]] was investigated. Patterned wafers were processed before and after and the profile of the etched features were inspected in SEM. Click on the numbers in the 'Runs' column below to see the profiles.
The effects of [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|changing of the showerhead in December 2014]] was investigated. Patterned wafers were processed before and after and the profile of the etched features were inspected in SEM. Click on the numbers in the 'Runs' column below to see the profiles.
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== Process A acceptance test==
== Process A test==
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Process A is labelled Large trench (80μm wide) 150μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.


{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
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|Etch rate in Si
|Etch rate in Si
|21 - 28 µm/min
|16 - 18.8 µm/min
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|-
|Non-uniformity
|Non-uniformity
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image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area
image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area
image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area
image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area
Without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform.
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''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).''
<br><br>
<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">
<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains.
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains.
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