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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA click here]'''
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== Effects on Process A of showerhead change in December 2014 ==
== Effects on Process A of showerhead change in December 2014 ==
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== Process A acceptance test==
== Process A test==
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Process A is labelled Large trench (80μm wide) 150μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
Process A is intended as a wide trench (80μm wide) depth etched down some 150 µm. Below are the results from a run on a 150 mm wafer with 12-13 % etch load.


{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
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|-
|-
|Etch rate in Si
|Etch rate in Si
|21 - 28 µm/min
|16 - 18.8 µm/min
|-
|-
|Non-uniformity
|Non-uniformity
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image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area
image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area
image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area
image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area
Without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform.
</gallery>
</gallery>
 
''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).''
<br><br>
<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">
<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3">
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains.
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains.
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