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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Resist/UVresist click here]'''
==UV resist comparison table==
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab.


'''This section is under construction [[Image:section under construction.jpg|70px]]'''
{| class="wikitable"
|-
! scope=row| Resist
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]
! style="width: 15%;"| [[Specific_Process_Knowledge/Lithography/TIspray|TI Spray]]
|-
! scope=row| Resist tone
|
*Positive
*Negative (image reversal)
| Positive
| Negative
| Positive
| Negative
|
*Positive
*Negative (image reversal)
|-
! scope=row| Thickness range
| 1.5 - 4.2 µm || 1.5 - 4 µm || 1.5 - 4 µm  || 5 - 10 µm || 1 - 200 µm || 0.5 - 5 µm
|-
! scope=row| Coating tool
|
Automatic spin coaters:
*Spin coater: Gamma UV lithography
*Spin coater: Gamma E-beam & UV
 
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
 
Spray coater
|
Automatic spin coaters:
*Spin coater: Gamma UV lithography
*Spin coater: Gamma E-beam & UV


= UV resist comparison table =
Manual spin coaters:
Comparison of specifications and feature space of UV photoresists.
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
Spray coater
|  
Automatic spin coaters:
*Spin coater: Gamma UV lithography
 
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
 
Spray coater
|
Automatic spin coaters:
*Spin coater: Gamma E-beam & UV
 
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Manual spin coaters:
* Spin coater: Labspin 02
* Spin coater: Labspin 03
* Spin coater: RCD8
|
Spray coater
|-
! scope=row| Spectral sensitivity
| 310 - 420 nm || 310 - 445 nm || 310 - 380 nm || 310 - 445 nm || 300 - 375 nm || 310 - 440 nm
|-
! scope=row| Exposure tool
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|
* Maskless aligners
* Mask aligners
|-
|-
 
! scope=row| Developer
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* AZ 351 B (NaOH)
|
* AZ 726 MIF (2.38% TMAH)
* [[Specific_Process_Knowledge/Lithography/nLOF#Development|Solvent development possible]]
|
AZ 726 MIF (2.38% TMAH)
|
mr-DEV 600 (PGMEA)
|
AZ 726 MIF (2.38% TMAH)
|-
|-
|-style="background:silver; color:black"
! scope=row| Development rinse agent
!Resist
| DIW || DIW || DIW || DIW || IPA || DIW
|AZ 5214E
|AZ MiR 701
|AZ nLOF 202
|AZ 4562
|SU-8 20xx
|-
|-
 
! scope=row| Remover
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
* Acetone
* Remover 1165 (NMP)
|
Remover 1165 (NMP)
|
* Cross-linked SU-8 is practically insoluble
* Oxygen plasma ashing can remove cross-linked SU-8
|
* Acetone
* Remover 1165 (NMP)
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Comments
!Resist tone
| Good adhesion for wet etch
| High selectivity for dry etch
| Negative sidewalls for lift-off
| For processes with resist thickness between 6 µm and 25 µm
|
|
*Positive
* High aspect ratio
*Negative (image reversal)
* Resist thickness 1 µm to hundreds of µm
|Positive
* Available in cleanroom: 2005, 2035, and 2075. Considering discontinuation of the SU-8 2000 series we need to move to another product SU8 3000 and SU8 XTF series.
|Negative
* New formulation will be available in cleanroom and tested: 3005 instead of 2005, 3035 instead of 2035, XTF75 instead of 2075 and new 3025.
|Positive
| TI spray resist is an image reversal resist, similar to AZ 5214E. The process flow will be similar to the process flows for 5214, except for the coating step. The exposure dose and development will depend on the specific process.
|Negative
|}
|-
 
<br clear="all" />
 
==Process flow examples==
Comparison of specifications and feature space of the standard UV photoresists available at DTU Nanolab. These are just examples and may contain obsolete information regarding exposure dose, etc.


|-style="background:silver; color:black"
{| class="wikitable"  
!Thickness range
|1.5 - 4.2 µm
|1.5 - 4 µm
|1.5 - 4 µm
|5 - 10 µm
|1 - 200 µm
|-
|-
 
! scope=row| Resist
! style="width: 15%;"| AZ 5214E
! style="width: 15%;"| AZ MIR 701
! style="width: 15%;"| AZ nLOF 2020
! style="width: 15%;"| AZ 4562
! style="width: 15%;"| SU-8
! style="width: 15%;"| Ti Spray
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| Maskless aligner
!Coating tool
|
* [[media:‎process_flow_AZ_5214E_positive_MLA_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MLA]]
* [[media:process_flow_AZ_5214E_IR_MLA_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MLA]]
|
|
Automatic coaters:<br>
[[media:process_flow_AZ_MiR_701_MLA_-_2023-02.docx‎|Process flow AZ MiR 701‎ MLA]]
*Spin coater: Gamma UV lithography
*Spin coater: Gamma ebeam & UV
 
Manual coaters:<br>
*Spin coater: Labspin 2
*Spin coater: Labspin 3
*Spin coater: RCD8
*Spray coater
|
|
Automatic coaters:<br>
[[media:process_flow_AZ_nLOF_2020_MLA_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MLA‎]]
*Spin coater: Gamma UV lithography
*Spin coater: Gamma ebeam & UV
 
Manual coaters:<br>
*Spin coater: Labspin 2
*Spin coater: Labspin 3
*Spin coater: RCD8
*Spray coater
|
|
Automatic coaters:<br>
[[media:process_flow_AZ_4562_MLA_-_2023-02.docx‎|Process flow AZ 4562 MLA]]
*Spin coater: Gamma UV lithography
 
Manual coaters:<br>
*Spin coater: Labspin 2
*Spin coater: Labspin 3
*Spin coater: RCD8
*Spray coater
|
|
Automatic coaters:<br>
[[media:process_flow_SU-8_MLA_-_2023-02.docx‎|Process flow SU-8 MLA‎]]
*Spin coater: Gamma ebeam & UV


Manual coaters:<br>
NB! Most of the process knowledge about SU-8 is based in research groups
*Spin coater: Labspin 2
*Spin coater: Labspin 3
*Spin coater: RCD8
|
|
Manual coaters:<br>
*Spin coater: RCD8
|-
|-
! scope=row| Mask aligner
|
* [[media:‎process_flow_AZ_5214E_positive_MA6_-_2023-02.docx‎ |Process flow AZ 5214E positive‎ MA6]]
* [[media:process_flow_AZ_5214E_IR_MA6_-_2023-02.docx‎ |Process flow AZ 5214E image reversal MA6]]
|
[[media:process_flow_AZ_MiR_701_MA6_-_2023-02.docx‎|Process flow AZ MiR 701‎ MA6]]
|
[[media:process_flow_AZ_nLOF_2020_MA6_-_2023-02.docx‎|Process flow AZ nLOF 2020‎ MA6‎]]
|
[[media:process_flow_AZ_4562_MA6_-_2023-02.docx‎|Process flow AZ 4562 MA6‎]]
|
[[media:process_flow_SU-8_MA6_-_2023-02.docx‎|Process flow SU-8 MA6‎]]


NB! Most of the process knowledge about SU-8 is based in research groups
|
|}
|}
'''Other process flows:'''
[[Media:process_flow_chip_on_carrier_-_2023-02.docx|Chip on carrier]]: A procedure for UV lithography on a chip using automatic coater and developer.
<br clear="all" />
<br clear="all" />


= Exposure dose =
==Exposure dose==
[[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption.]]
[[Image:resistSensitivity_UV.png|400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption coefficient.]]


During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer.
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer.


In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist ''in''soluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose.
In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake (PEB), it makes the resist ''in''soluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose.


The optimal exposure dose is a function of many parameters, including the type of resist, the resist thickness, and the sensitivity of the resist.
The optimal exposure dose is a function of many parameters, including the type of resist, the resist thickness, and the sensitivity of the resist.
Line 108: Line 224:
Due to the process of bleaching, where the absorption of the resist changes during exposure, the exposure dose is unfortunately not always constant at different intensities of the exposure light. The exposure time is thus not always a linear function of the exposure intensity.
Due to the process of bleaching, where the absorption of the resist changes during exposure, the exposure dose is unfortunately not always constant at different intensities of the exposure light. The exposure time is thus not always a linear function of the exposure intensity.


= Calculate exposure time =
==Calculate exposure time==
In the maskless aligners, the dose is set directly as a process parameter in the job. In mask aligners, on the other hand, the parameter that is set is the exposure time, i.e. how long the shutter is open during the exposure.
In the maskless aligners, the dose is set directly as a process parameter in the job. In mask aligners, on the other hand, the parameter that is set is the exposure time, i.e. how long the shutter is open during the exposure.


The exposure dose, ''D'' [J/m<sup>2</sup>], is given by:
The exposure dose, ''D'' [J/m<sup>2</sup>], in terms if exposure light intensity ''I'' [W/m<sup>2</sup>] and exposure time ''t'' [s], is given by:


''D'' = ''I'' x ''t'' ,
<math>D=I \sdot t</math>


where ''I'' [W/m<sup>2</sup>] is the intensity of the exposure light, and ''t'' [s] is the exposure time. As the intensity is specific to the spectral sensitivity of the sensor used to measure the exposure light, and the exposure time is specific to the spectral distribution of the exposure light (cf. spectral sensitivity), this dose is specific to the combination of exposure source and optical sensor.
Since the intensity is specific to the spectral sensitivity of the sensor used to measure the exposure light, and the exposure time is specific to the spectral distribution of the exposure light (cf. spectral sensitivity), this dose is specific to the combination of exposure source and optical sensor.


Given an exposure dose, the exposure time, ''t'', is calculated as:
Given an exposure dose, the exposure time, ''t'', is calculated as:


''t'' = ''D'' / ''I''
<math>t = D \sdot I^{-1}</math>


It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process.
It is important to keep in mind that this exposure time is valid ''only'' for a specific combination of exposure source and optical sensor, as well as for a specific development process.


=Exposure dose for mask aligners=
==Exposure dose for mask aligners==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.


All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH.
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF).


==KS Aligner==
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.


{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
===Aligner: MA6-1===
The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.
 
'''Quality control'''<br>
Please note that the values listed in the table are <i>'''not'''</i> routinely tested as part of quality control.
 
{| class="wikitable"
|-
!  !! Date !! Operator !! Film thickness !! Exposure mode !! Dose !! Resolution !! Comments
|-
|-
 
! scope=row| AZ MIR 701
| Long ago || ? || 1.5 µm || ? || 180 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle
|-
|-
|-style="background:silver; color:black"
! scope=row| AZ MIR 701
|
| Long ago || ? || 2.0 µm || ? || 200 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle
!Date
!Thickness
!Dose
!Development
!Comments
|-
|-
 
! scope=row| AZ MIR 701
| Long ago || ? || 4.0 µm || ? || 400 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| AZ 5214E
!rowspan="3"|AZ 5214E<br><span style="color:red">Old German version</span>
| Long ago || ? || 1.5 µm || ? || 72 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Development: 60 s puddle
|Long ago
|1.5 µm
|72 mJ/cm<sup>2</sup>
|rowspan="3"|Single puddle, 60 s
|rowspan="3"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|80 mJ/cm<sup>2</sup>
|-style="background:WhiteSmoke; color:black"
|Long ago
|4.2 µm
|160 mJ/cm<sup>2</sup>
|-
|-
 
! scope=row| AZ 5214E
| Long ago || ? || 2.2 µm || ? || 80 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Development: 60 s puddle
|-
|-
|-style="background:LightGrey; color:black"
! scope=row| AZ 5214E
!AZ 4562<br><span style="color:red">Old German version</span>
| Long ago || ? || 4.2 µm || ? || 160 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Development: 60 s puddle
|Long ago
|10 µm
|510 mJ/cm<sup>2</sup>
|Multiple puddle, 4 x 60 s
|Multiple exposure with 10-15 s pauses is recommended.
|-
|-
 
! scope=row| AZ 5214E<br>Image reversal
| Long ago || ? || 2.2 µm || ? || ? mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Reversal bake: 60 s @ 110°C<br>Flood exposure: 500 mJ/cm<sup>2</sup><br>Development: 60 s puddle
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| AZ nLOF 2020
!rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
| Long ago || ? || 2.0 µm || ? || 121 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle<br><br>Side wall angle: ~15°<br>For smaller angle (~5°): develop 30 seconds instead
|Long ago
|1 µm
|180 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|PEB: 60 s at 110°C
|-style="background:WhiteSmoke; color:black"
|Long ago
|2 µm
|200 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4 µm
|400 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="1"|PEB: 90 s at 110°C
|-
|-
! scope=row| AZ 4562
| Long ago || ? || 10 µm || ? || 510 mJ/cm<sup>2</sup> || ≤5 µm || '''Not under regular quality control'''<br><br>Priming: HMDS<BR>Rehydration after SB: none<br>Exposure: Multiple exposures with 15 s pauses is recommended<br>Degassing after exposure: none<br>Development: 5 x 60 s multi puddle
|}


|-
'''New resists version in 2023'''<br>
|-style="background:LightGrey; color:black"
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. <span style="color:red">This table contains only information about the <i>old</i> resist versions.</span>
!AZ nLOF 2020
|Long ago
|2 µm
|110 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|PEB: 60 s at 110°C
Side wall angle ~15°


For smaller angle (~5°), develop 30 seconds instead
<br clear="all" />
|}


==Aligner: MA6 - 2==
===Aligner: MA6-2===
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
The Aligner: MA6-2 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.


{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
'''Quality control'''<br>
|-
Please note that the values listed in the table are <i>'''not'''</i> routinely tested as part of quality control.


{| class="wikitable"
|-
|-
|-style="background:silver; color:black"
!  !! Date !! Operator !! Film thickness !! Exposure mode !! Dose !! Resolution !! Comments
|
!Date
!Thickness
!Dose
!Development
!Comments
|-
|-
 
! scope=row| AZ MIR 701
| 2023-09-26 || taran || 1.5 µm || Hard contact || 150 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| AZ 5214E
!rowspan="2"|AZ 5214E<br><span style="color:red">Old German version</span>
| 2025-09-30 || jehem || 1.5 µm || Hard contact|| 90 mJ/cm<sup>2</sup> || 1.5 µm || '''Not under regular quality control'''<br><br>Development: 60 s puddle
|Long ago
|1.5 µm
|72 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|90 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-
|-
 
! scope=row| AZ 5214E<br>Image reversal
| 2023-01-11 || jehem || 2.2 µm || Hard contact|| 22 mJ/cm<sup>2</sup> || 2.0 µm || '''Not under regular quality control'''<br><br>Reversal bake: 60 s @ 110°C<br>Flood exposure: 500 mJ/cm<sup>2</sup><br>Development: 60 s puddle
|-
|-
|-style="background:LightGrey; color:black"
! scope=row| AZ nLOF 2020
!rowspan="2"|AZ 5214E Image Reversal<br><span style="color:red">Old German version</span>
| 2023-09-26 || taran || 2.0 µm || Hard contact || 121 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle
|Long ago
|1.5 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|Image reversal process.<br>Reversal bake: 120 s at 110°C.<br>Flood exposure: 200 mJ/cm<sup>2</sup>
|-style="background:LightGrey; color:black"
|Long ago
|2.2 µm
|25 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-
|-
! scope=row| AZ 4562
| 2021-12-08 || jehem || 10 µm || Soft contact|| 550 mJ/cm<sup>2</sup> || ≤5 µm || '''Not under regular quality control'''<br><br>Priming: HMDS<BR>Rehydration after SB: none<br>Exposure: Single exposure<br>Degassing after exposure: none<br>Development: 5 x 60 s multi puddle
|}
'''New resists version in 2023'''<br>
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. This table contains only information about the new resist versions.
<br clear="all" />
==Exposure dose for maskless aligners==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values.
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF).


|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
|Long ago
|1.5 µm
|169 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|PEB: 60 s at 110°C
|-style="background:WhiteSmoke; color:black"
|Long ago
|2 µm
|200 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4 µm
|280 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="1"|PEB: 60 s at 110°C<br>Process adopted from process logs
|-


|-
===Aligner: Maskless 01===
|-style="background:LightGrey; color:black"
The Aligner: Maskless 01 has a 365 nm laser light source with a FWHM of ~1 nm. The test exposures on this tool were made using the pneumatic autofocus system.
!AZ nLOF 2020
|Long ago
|1.5 µm
|104 mJ/cm<sup>2</sup>
|Single puddle, 30 s
|PEB: 60 s at 110°C<br>Use 60 s development for lift-off
|-


|-
'''Quality control'''<br>
|-style="background:WhiteSmoke; color:black"
Please note that the values listed in the table are <i>'''not'''</i> routinely tested as part of quality control, except for the resist AZ 5214E.
!AZ 5214E<br><span style="color:green">New Japanese version</span>
|2023-01-11<br>jehem
|1.5 µm
|70 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|
|-


{| class="wikitable"
|-
|-
|-style="background:LightGrey; color:black"
! !! Date !! Operator !! Film thickness !! Exposure mode !! Dose !! Defoc !! Resolution !! Comments
!AZ 5214E Image Reversal<br><span style="color:green">New Japanese version</span>
|2023-01-11<br>jehem
|2.2 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|Image reversal process.<br>Reversal bake: 60 s at 110°C.<br>Flood exposure: 500 mJ/cm<sup>2</sup>
|-
|-
 
! scope=row| AZ MIR 701
| 2025-10-16 || jehem || 1.5 µm || Fast || 325 mJ/cm<sup>2</sup> || -1 || 1.5 µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle<br><br>Tested using dehydration reducing measures
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| AZ 5214E
!AZ 4562<br><span style="color:green">New Japanese version</span>
| 2025-08-15 || taran || 1.5 µm || Fast|| 110 mJ/cm<sup>2</sup> || -1 || 1.75 µm || See QC data for latest values<br><br>Development: 60 s puddle
|2021-12-08<br>jehem
|10 µm
|550 mJ/cm<sup>2</sup>
|Multiple puddles, 5 x 60 s
|Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)
|-
|-
 
! scope=row| AZ 5214E<br>Image reversal
| 2023-04-05 || jehem || 2.2 µm || Fast|| 20 mJ/cm<sup>2</sup><br><span style="color:red">possibly incorrect data</span> || -2<br><span style="color:red">possibly incorrect data</span> || 2.0 µm || '''Not under regular quality control'''<br><br>Reversal bake: 60 s @ 110°C<br>Flood exposure: 500 mJ/cm<sup>2</sup><br>Development: 60 s puddle
|-
|-
|-style="background:LightGrey; color:black"
! scope=row| AZ nLOF 2020
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
| 2023-07-06 || jehem || 2.0 µm || Fast || 180 mJ/cm<sup>2</sup> || 0 || 1.5 µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle
|2021-06-23<br>elkh
|1.5 µm
|150 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|PEB: 60 s at 110°C
|-
|-
! scope=row| AZ 4562
| 2023-04-05 || jehem || 10 µm || Fast|| 1050 mJ/cm<sup>2</sup><br><span style="color:red">possibly incorrect data</span> || -1<br><span style="color:red">possibly incorrect data</span> || ≤5 µm || '''Not under regular quality control'''<br><br>Priming: HMDS<BR>Rehydration after SB: none<br>Exposure: Single exposure<br>Degassing after exposure: none<br>Development: 5 x 60 s multi puddle
|}
|}


=Exposure dose for maskless aligners=
'''New resists version in 2023'''<br>
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. This table contains only information about the new resist versions.
 
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.
 
<br clear="all" />


All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH.
===Aligner: Maskless 02===
The Aligner: Maskless 02 has a 375 nm laser light source with a FWHM of ~1 nm. The test exposures on this tool were made using the optical autofocus system, unless otherwise specified.


==Aligner: Maskless 01==
'''Quality control'''<br>
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
Please note that the values listed in the table are <i>'''not'''</i> routinely tested as part of quality control, except for the resist AZ 5214E.
|-


{| class="wikitable"
|-
|-
|-style="background:silver; color:black"
!  !! Date !! Operator !! Film thickness !! Exposure mode !! Dose !! Defoc !! Resolution !! Comments
|
!Date
!Thickness
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
|-
 
! scope=row| AZ MIR 701
| 2023-08-21 || taran || 1.5 µm || Quality || 325 mJ/cm<sup>2</sup> || 1 || 1 µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle<br><br>Tested using dehydration reducing measures
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| AZ 5214E
!rowspan="2"| AZ 5214E<br><span style="color:red">Old German version</span>
| 2024-12-09 || taran || 1.5 µm || Quality|| 100 mJ/cm<sup>2</sup> || 2 || 1.5 µm || See QC data for latest values<br><br>Development: 60 s puddle
| 2021-08-19<br>jehem
| 1.5 µm
| Fast
| 80 mJ/cm<sup>2</sup>
| -4
| 2 µm
| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| 2021-08-19<br>jehem
| 1.5 µm
| Quality
| 80 mJ/cm<sup>2</sup>
| -4
| 1.25 µm
| Dev: SP60s
|-
|-
 
! scope=row| AZ 5214E<br>Image reversal
| 2023-04-17 || jehem || 2.2 µm || Quality|| 35 mJ/cm<sup>2</sup> || 0 || 1.5 µm || '''Not under regular quality control'''<br><br>Reversal bake: 60 s @ 110°C<br>Flood exposure: 500 mJ/cm<sup>2</sup><br>Development: 60 s puddle
|-
|-
|-style="background:LightGrey; color:black"
! scope=row| AZ nLOF 2020
!rowspan="2"| AZ 5214E image reversal<br><span style="color:red">Old German version</span>
| 2023-08-21 || taran || 2.0 µm || Quality || 450 mJ/cm<sup>2</sup> || 0 || 1.5 µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle
| 2020-03-01<br>taran
| 2.2 µm
| Fast
| 43 mJ/cm<sup>2</sup>
| 0
| >2 µm (a lot of stitching)
| Reversal bake: 120s@110°C, Flood exposure: 200mJ/cm<sup>2</sup>, Dev: SP60s
|-style="background:LightGrey; color:black"
| 2021-08-25<br>jehem
| 2.2 µm
| Quality
| 26 mJ/cm<sup>2</sup>
| -4
| 1.75 µm
| Reversal bake: 120s@110°C, Flood exposure: 200mJ/cm<sup>2</sup>, Dev: SP60s
|-
|-
! scope=row| AZ 4562
| 2023-04-19 || jehem || 10 µm || Quality|| 1150 mJ/cm<sup>2</sup> || 0 || ≤5 µm || '''Not under regular quality control'''<br><br>Priming: HMDS<BR>Rehydration after SB: none<br>Exposure: Single exposure<br>Degassing after exposure: none<br>Development: 5 x 60 s multi puddle
|}
'''New writehead'''<br>
As of 2023-03-21 the MLA2 has a new writehead installed, converting it from a write mode 1 tool to a write mode 2 tool. This makes all previous dose/defocus settings obsolete. This table contains only the dose/defocus values for the new writehead.
'''New resists version in 2023'''<br>
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. This table contains only information about the new resist versions.
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.
<br clear="all" />


|-
===Aligner: Maskless 03===
|-style="background:WhiteSmoke; color:black"
The Aligner: Maskless 03 has a 405 nm laser light source with a FWHM of ~1 nm. The test exposures on this tool were made using the pneumatic autofocus system.
!AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
| 2021-08-25<br>jehem
| 1.5 µm
| Fast
| 225 mJ/cm<sup>2</sup>
| -4
| 1.25 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C, Dev: SP60s
|-style="background:WhiteSmoke; color:black"
|-


|-
'''Quality control'''<br>
|-style="background:LightGrey; color:black"
Please note that the values listed in the table are <i>'''not'''</i> routinely tested as part of quality control, except for the resist AZ 5214E.
!rowspan="2"| AZ nLOF 2020
| 2020-02-01<br>jehem
| 2.0 µm
| Fast
| 300 mJ/cm<sup>2</sup>
| 0
| 2 µm (due to stitching)
| PEB: 60s@110°C, Dev: SP60s
|-style="background:LightGrey; color:black"
| 2020-03-01<br>taran
| 2.0 µm
| Quality
| 180-200 mJ/cm<sup>2</sup>
| 0
| 1 µm
| PEB: 60s@110°C, Dev: SP60s
|-


{| class="wikitable"
|-
|-
|-style="background:WhiteSmoke; color:black"
! !! Date !! Operator !! Film thickness !! Exposure mode !! Dose !! Defoc !! Resolution !! Comments
!AZ 5214E<br><span style="color:green">New Japanese version</span>
| 2023-01-06<br>jehem
| 1.5 µm
| Fast
| 80 mJ/cm<sup>2</sup>
| -2
| 1.75 µm
| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
|-
|-
 
! scope=row| AZ MIR 701
| 2025-10-20 || jehem || 1.5 µm || Quality || 175 mJ/cm<sup>2</sup> || -1 || 1 µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle<br><br>Tested using dehydration reducing measures
|-
|-
|-style="background:LightGrey; color:black"
! scope=row| AZ 5214E
!AZ 5214E image reversal<br><span style="color:green">New Japanese version</span>
| 2025-09-02 || taran || 1.5 µm || Quality|| 75 mJ/cm<sup>2</sup> || 1 || 1 µm || See QC data for latest values<br><br>Development: 60 s puddle
| 2023-01-11<br>jehem
| 2.2 µm
| Fast
| 42 mJ/cm<sup>2</sup>
| -2
| 1.75 µm
| Reversal bake: 60s@110°C, Flood exposure: 500mJ/cm<sup>2</sup>, Dev: SP60s
|-
|-
 
! scope=row| AZ 5214E<br>Image reversal
| 2023-06-30 || jehem || 2.2 µm || Quality|| 50 mJ/cm<sup>2</sup> || 0 || 1 µm || '''Not under regular quality control'''<br><br>Reversal bake: 60 s @ 110°C<br>Flood exposure: 500 mJ/cm<sup>2</sup><br>Development: 60 s puddle
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| AZ nLOF 2020
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
| 2023-06-30 || jehem || 2 µm || Quality|| 9000 mJ/cm<sup>2</sup> || 2 || 1 µm || '''Not under regular quality control'''<br><br>Post exposure bake: 60 s @ 110°C<br>Development: 60 s puddle<br><br><span style="color:red">'''Due to the high dose required on this tool, it is recommended to process nLOF on tools with a more appropriate exposure light source'''</span>
| 2021-08-25<br>jehem
| 1.5 µm
| Fast
| 225 mJ/cm<sup>2</sup>
| -4
| 1.25 µm (due to stitching)<br>Tested using dehydration reducing measures
| PEB: 60s@110°C, Dev: SP60s
|-
|-
! scope=row| AZ 4562
| 2023-06-30 || jehem || 10 µm || Quality|| 550 mJ/cm<sup>2</sup> || 3 || ≤5 µm || '''Not under regular quality control'''<br><br>Priming: HMDS<BR>Rehydration after SB: none<br>Exposure: Single exposure<br>Degassing after exposure: none<br>Development: 5 x 60 s multi puddle
|}


|-
'''New resists version in 2023'''<br>
|-style="background:LightGrey; color:black"
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. This table contains only information about the new resist versions.
!AZ 4562<br><span style="color:green">New Japanese version</span>
| 2021-12-07<br>jehem
| 10 µm
| Fast
| 750 mJ/cm<sup>2</sup>
| 0
| ≤5 µm
| Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)<br>Development: Multiple puddles, 5 x 60 s
|-


|}
<br>
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
'''Dehydration reducing measures used for testing AZ MiR 701:'''<br>
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure.


==Aligner: Maskless 02==
<br clear="all" />


==Exposure dose when using AZ 351B developer (NaOH)==
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.


==Aligner: Maskless 03==
All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5.


=Exposure dose when using AZ 351B developer (NaOH)=
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.


All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH).
===Aligner: MA6-1===
The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.


==KS Aligner (351B)==
'''Quality control'''<br>
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
Please note that the values listed in the table are <i>'''not'''</i> routinely tested as part of quality control.


{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"  
{| class="wikitable"
|-
|-
 
!  !! Date !! Operator !! Film thickness !! Exposure mode !! Dose !! Resolution !! Comments
|-
! scope=row| AZ 5214E
| Long ago || ? || 1.5 µm || ? || 70 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Development: 60 s submersion
|-
|-
|-style="background:silver; color:black"
! scope=row| AZ 5214E
|
| Long ago || ? || 2.2 µm || ? || 72 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Development: 70 s submersion
!Date
!Thickness
!Dose
!Development]
!Comments
|-
|-
 
! scope=row| AZ 5214E
| Long ago || ? || 4.2 µm || ? || 160 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Development: 180 s submersion
|-
|-
|-style="background:WhiteSmoke; color:black"
! scope=row| AZ 5214E<br>Image reversal
!rowspan="3"|AZ 5214E
| Long ago || ? || 1.5 µm || ? || 30 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Reversal bake: 100 s @ 110°C<br>Flood exposure: 210 mJ/cm<sup>2</sup><br>Development: 60 s submersion
|Long ago
|1.5 µm
|70mJ/cm<sup>2</sup>
|60 s
|rowspan="3"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|72 mJ/cm<sup>2</sup>
|70 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4.2 µm
|160 mJ/cm<sup>2</sup>
|180 s
|-
|-
 
! scope=row| AZ 5214E<br>Image reversal
| Long ago || ? || 2.2 µm || ? || 35 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Reversal bake: 100 s @ 110°C<br>Flood exposure: 210 mJ/cm<sup>2</sup><br>Development: 70 s submersion
|-
|-
|-style="background:LightGrey; color:black"
! scope=row| AZ 4562
!rowspan="2"|AZ 5214E
| Long ago || ? || 10 µm || ? || 320 mJ/cm<sup>2</sup> || ? µm || '''Not under regular quality control'''<br><br>Priming: HMDS<BR>Rehydration after SB: none<br>Exposure: Multiple exposures with 15 s pauses is recommended<br>Degassing after exposure: none<br>Development: 300 s submersion
|Long ago
|}
|1.5 µm
|30 mJ/cm<sup>2</sup>
|60 s
|rowspan="2"|Image reversal process.


Reversal bake: 100s at 110°C.<br>Flood exposure after reversal bake: 210 mJ/cm<sup>2</sup>
'''New resists version in 2023'''<br>
|-style="background:LightGrey; color:black"
As of 2023-03-21 we no longer have any of the old versions of the resists: AZ 5214E, AZ 4562, AZ MiR 701. <span style="color:red">This table contains only information about the <i>old</i> resist versions.</span>
|Long ago
|2.2 µm
|35 mJ/cm<sup>2</sup>
|70 s
|-


|-
<br clear="all" />
|-style="background:WhiteSmoke; color:black"
!AZ 4562
|Long ago
|10 µm
|320 mJ/cm<sup>2</sup>
|5 minutes
|Multiple exposure with 10-15 s pauses is recommended.
|-
|}
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