Specific Process Knowledge/Etch/III-V RIE: Difference between revisions
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'''''Unless otherwise stated, this page is written by DTU Nanolab internal''''' | '''''Unless otherwise stated, this page is written by DTU Nanolab internal''''' | ||
==III-V RIE Plassys== | ==III-V RIE Plassys <span style="background:#ff0000"> This tool has been decommissioned - please ask the dryetch group for alternatives.</span>== | ||
===(will be decommissioned October 2025)=== | |||
Name: MG300 RIE <br> | Name: MG300 RIE <br> | ||
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*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214) | *Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214) | ||
*InP: ~29 nm/min | *InP: ~29 nm/min | ||
* | *InGaAs: ~9 nm/min | ||
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|style="background:LightGrey; color:black"|Anisotropy | |style="background:LightGrey; color:black"|Anisotropy | ||
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*20 cm | *20 cm | ||
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| style="background:LightGrey; color:black"| | | style="background:LightGrey; color:black"|Material allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* III-V compound semiconductors | * III-V compound semiconductors | ||
* Silicon based materials | |||
* Photoresist/e-beam resist | |||
* BCB | |||
*Photoresist/e-beam resist | * For other materials, please ask | ||
* | |||
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