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Specific Process Knowledge/Etch/III-V RIE: Difference between revisions

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'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''
'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''


==III-V RIE Plassys==
==III-V RIE Plassys <span style="background:#ff0000"> This tool has been decommissioned - please ask the dryetch group for alternatives.</span>==
===(will be decommissioned October 2025)===


Name: MG300 RIE <br>
Name: MG300 RIE <br>
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The diameter of the quartz plate is 20 cm, ie up to 2 4" wafers, 3 3" wafers or 4 2" wafers can be processed simultaneously. The area, A, of the quartz plate is 314 cm<sup>2</sup>.
The diameter of the quartz plate is 20 cm with a recess for 4" wafers, ie up to one 4" wafer, one 3" wafer or one 2" wafer or several smaller samples can be processed simultaneously. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec where after the power can be lowered to the desired value.
 
The intensity of the plasma is the ratio of power applied to the plasma, P, to the area, A, of the quartz plate. A power of 1000 W thus gives a plasma intensity of 0.32 W/cm<sup>2</sup>. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec where after the power can be lowered to the desired value.


The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning|Chamber Cleaning]].
The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning|Chamber Cleaning]].
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*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214)
*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214)
*InP: ~29 nm/min
*InP: ~29 nm/min
*GaAs: ~9 nm/min
*InGaAs: ~9 nm/min
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|-
|style="background:LightGrey; color:black"|Anisotropy
|style="background:LightGrey; color:black"|Anisotropy
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*20 cm
*20 cm
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* III-V compound semiconductors
* III-V compound semiconductors
|-
* Silicon based materials
| style="background:LightGrey; color:black"|Possible masking material
* Photoresist/e-beam resist
|style="background:WhiteSmoke; color:black"|
* BCB
*Photoresist/e-beam resist
* For other materials, please ask
*Titanium
|-  
|-  
|}
|}
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