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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE click here]'''<br>
   
   
==III-V RIE Plassys==
'''''Unless otherwise stated, this page is written by DTU Nanolab internal'''''
 
==III-V RIE Plassys <span style="background:#ff0000"> This tool has been decommissioned - please ask the dryetch group for alternatives.</span>==
===(will be decommissioned October 2025)===


Name: MG300 RIE <br>
Name: MG300 RIE <br>
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== General information ==
== General information ==
[[Image:III-V RIE Plassys.jpg|right|250px|thumb| III-V RIE is positioned in room A-1]]
[[Image:III-V RIE Plassys.jpg|right|250px|thumb| III-V RIE is located in room A-1]]


Dry etching of III-V compound semiconductors is performed with a conventional Reactive Ion Etch (RIE) located in cleanroom 1. The III-V RIE is a Plassys model MG300. Find the company website her: [http://www.plassys.com/ Plassys].
Dry etching of III-V compound semiconductors is performed with a conventional Reactive Ion Etch (RIE) located in cleanroom A-1. The III-V RIE is a Plassys model MG300. Find the company website her: [http://www.plassys.com/ Plassys].


The system is equipped with a laser interferometer to monitor etch-rate and -depth.
The system is equipped with a laser interferometer to monitor etch-rate and -depth.
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The diameter of the quartz plate is 20 cm, ie up to 2 4" wafers, 3 3" wafers or 4 2" wafers can be processed simultaneously. The area, A, of the quartz plate is 314 cm<sup>2</sup>.
The diameter of the quartz plate is 20 cm with a recess for 4" wafers, ie up to one 4" wafer, one 3" wafer or one 2" wafer or several smaller samples can be processed simultaneously. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec where after the power can be lowered to the desired value.
 
The intensity of the plasma is the ratio of power applied to the plasma, P, to the area, A, of the quartz plate. A power of 1000 W thus gives a plasma intensity of 0.32 W/cm<sup>2</sup>. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec whereafter the power can be lowered to the desired value.


The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning|Chamber Cleaning]].
The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning|Chamber Cleaning]].
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*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214)
*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214)
*InP: ~29 nm/min
*InP: ~29 nm/min
*GaAs: ~9 nm/min
*InGaAs: ~9 nm/min
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|style="background:LightGrey; color:black"|Anisotropy
|style="background:LightGrey; color:black"|Anisotropy
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*20 cm
*20 cm
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|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* III-V compound semiconductors
* III-V compound semiconductors
|-
* Silicon based materials
| style="background:LightGrey; color:black"|Possible masking material
* Photoresist/e-beam resist
|style="background:WhiteSmoke; color:black"|
* BCB
*Photoresist/e-beam resist
* For other materials, please ask
*Titanium
|-  
|-  
|}
|}
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