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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
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'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/MVD click here]'''
'''Feedback to this page''': '''[mailto:photolith@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/MVD click here]'''
 
[[index.php?title=Category:Equipment|Thin film MVD]]
[[index.php?title=Category:Thin Film Deposition|MVD]]


== The Molecular Vapor Deposition tool ==
== The Molecular Vapor Deposition tool ==


[[image:Mvd.jpg|200x200px|right|thumb|The MVD is located in cleanroom 1]]
[[image:Mvd.jpg|200x200px|right|thumb|The MVD is located in cleanroom A-1]]
 
The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At DTU Nanolab the MVD is an essential tool for nanoimprint lithography, where it is used to create antistiction coatings on the imprint stamps.
 
'''As per Jan 2025 the O2 plasma is no longer possible to use, we recommend to use a plasma asher before use and then run Flat2NP and Stamp2NP respectively, where NP is for No Plasma. - rkc'''
 
 
 
'''The user manual, user APV, and contact information can be found in LabManager:'''


The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is essential for nanoimprint lithography.
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=199 MVD in LabManager]


'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=313 LabManager]'''
==Process information==
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating|Processing on the MVD]]
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating#The FLAT recipe|The FLAT recipe]]
*[[Specific Process Knowledge/Thin film deposition/Antistiction Coating#The STAMP recipe|The STAMP recipe]]


===Process information===
*[[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing|General Spin Track 1 + 2 process information]]
*[[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing#HMDS priming only|HMDS priming on Spin Track 1 and 2]]


=== Equipment performance and process related parameters ===
== Equipment performance and process related parameters ==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  
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|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spin coating and soft baking UV sensative resists
*FDTS coating of Si or SiO2 surfaces
*Spin coating SU8 resists
*Indirect O2 plasma treatment
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Resist
!style="background:silver; color:black;" align="center" width="60"|Vapor sources
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|Line
|style="background:WhiteSmoke; color:black" align="center"|
*1
* AZ5214E permanent line
*2
* AZ4562 manual dispense
*3
* SU8 resists manual dispense
*4
|style="background:WhiteSmoke; color:black"|Chemical
*Water
*FDTS (new source, 2013)
*FDTS (old source, contaminated line)
*Available (line probably contaminated, no source heater)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
|style="background:LightGrey; color:black"|Coating thickness
|style="background:LightGrey; color:black"|Contact angle
|style="background:WhiteSmoke; color:black" align="center"|
|style="background:WhiteSmoke; color:black" align="center"|
* AZ5214E 1-4,2 µm
110° (water)
* AZ4526 6,2-10 µm
* SU8 resits 0,1-100 µm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Spin speed
|style="background:LightGrey; color:black"|Base pressure
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
100 - 5000 rpm
20 mTorr
|-
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:LightGrey; color:black"|Chamber temperature
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
100 - 5000 rpm/s
35°C
|-
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:LightGrey; color:black"|Chamber volume
|style="background:WhiteSmoke; color:black" align="center"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* changeable temperature from 20° to 200°
Approx. 3 liters
* SU8 must be bake out on SU8 dedicated hotplates
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
1" to 8"
* 100 mm wafers
 
* 150 mm wafers
Smaller samples may be processed if fixed to a carrier
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials except III-V materials
All cleanroom materials except steel and other ferrous materials
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1
One sample at a time
 
Two 4" or 6" wafers may be processed simultaneously using cassettes
|-  
|-  
|}
|}


<br clear="all" />
<br clear="all" />

Latest revision as of 08:29, 8 October 2025

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Thin film MVD MVD

The Molecular Vapor Deposition tool

The MVD is located in cleanroom A-1

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At DTU Nanolab the MVD is an essential tool for nanoimprint lithography, where it is used to create antistiction coatings on the imprint stamps.

As per Jan 2025 the O2 plasma is no longer possible to use, we recommend to use a plasma asher before use and then run Flat2NP and Stamp2NP respectively, where NP is for No Plasma. - rkc


The user manual, user APV, and contact information can be found in LabManager:

MVD in LabManager

Process information


Equipment performance and process related parameters

Purpose
  • FDTS coating of Si or SiO2 surfaces
  • Indirect O2 plasma treatment
Vapor sources Line
  • 1
  • 2
  • 3
  • 4
 Chemical
  • Water
  • FDTS (new source, 2013)
  • FDTS (old source, contaminated line)
  • Available (line probably contaminated, no source heater)
Performance Contact angle

110° (water)

Process parameters Base pressure

20 mTorr

Chamber temperature

35°C

Chamber volume

Approx. 3 liters

Substrates Substrate size

1" to 8"

Smaller samples may be processed if fixed to a carrier

Allowed materials

All cleanroom materials except steel and other ferrous materials

Batch

One sample at a time

Two 4" or 6" wafers may be processed simultaneously using cassettes


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