Jump to content

Specific Process Knowledge/Lithography/Strip: Difference between revisions

← Older edit
VisualWikitext
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,716 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,716 edits
 
(16 intermediate revisions by the same user not shown)
Line 18: Line 18:
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
|-
! scope=row| Purpose  
! scope=row style="text-align: left;" | Purpose  
| Resist descum
| Resist descum
|
|
Line 29: Line 29:
| Metal lift-off
| Metal lift-off
|-
|-
! scope=row| Method
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
| Plasma ashing
Line 36: Line 36:
| Solvent & ultrasonication
| Solvent & ultrasonication
|-
|-
! scope=row| Process: Gasses
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
| O<sub>2</sub> (50 sccm)
|
|
Line 48: Line 48:
| NA
| NA
|-
|-
! scope=row| Process: Power
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
Line 55: Line 55:
| NA
| NA
|-
|-
! scope=row| Process: Solvent
! scope=row style="text-align: left;" | Process solvent
| NA
| NA
| NA
| NA
Line 66: Line 66:
*IPA (rinsing agent)
*IPA (rinsing agent)
|-
|-
! scope=row| Substrate: Batch
! scope=row style="text-align: left;" | Substrate batch
|
|
*Chips: several
*Chips: several
Line 90: Line 90:
*150 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
! scope=row| Substrate: Materials
! scope=row style="text-align: left;" | Substrate materials
|
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*<span style="color:red">'''No polymer substrates'''</span><br>
Line 132: Line 132:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Process parameter !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4&5)]] !! Surface treatment !! Other ashing of organic material
! !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|-
|-
! scope=row| Process pressure
! scope=row style="text-align: left;" | Process pressure
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|-
|-
! scope=row| Process gasses
! scope=row style="text-align: left;" | Process gasses
|  
|  
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
Line 153: Line 153:
*O<sub>2</sub>
*O<sub>2</sub>
|-
|-
! scope=row| Process power
! scope=row style="text-align: left;" | Process power
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|-
|-
! scope=row| Process time
! scope=row style="text-align: left;" | Process time
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|-
|-
! scope=row| Substrate batch
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1 || 1
| 1-25 || 1-2 || 1-25 || 1 || 1
|}
|}
Line 169: Line 169:


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />


Line 176: Line 175:


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />


Line 242: Line 240:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 500 sccm || 200 sccm
| 500 sccm || 200 sccm
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| Tested parameter || Tested parameter
| Tested parameter || Tested parameter
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.25 mbar || 1.3 mbar
| 1.25 mbar || 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C  
| 43°C || 47°C  
|}
|}
Line 288: Line 286:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 150 sccm || 200 sccm
| 150 sccm || 200 sccm
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| Tested parameter || Tested parameter
| Tested parameter || Tested parameter
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 55°C  
| 43°C || 55°C  
|}
|}
Line 334: Line 332:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| Tested parameter || Tested parameter  
| Tested parameter || Tested parameter  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar || 1.3 mbar
| 1.3 mbar || 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C  
| 43°C || 47°C  
|}
|}
Line 378: Line 376:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows temperature
| Ashing rate follows Power
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W 
| Tested parameter
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| Tested parameter
| 40°C
|}
|}


Line 422: Line 420:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows power
| Ashing rate follows temperature
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| Tested parameter
| 1000 W
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 40°C
| Tested parameter
|}
|}


Line 535: Line 533:
!  !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
!  !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-
|-
! scope=row| Process  
! scope=row style="text-align: left;" | Process  
| Wet resist strip || Metal lift-off process
| Wet resist strip || Metal lift-off process
|-
|-
! scope=row| Chemical
! scope=row style="text-align: left;" | Chemical
| Remover 1165 (NMP) || Remover 1165 (NMP)
| Remover 1165 (NMP) || Remover 1165 (NMP)
|-
|-
! scope=row| Process temperature
! scope=row style="text-align: left;" | Process temperature
| Up to 65°C || Up to 65°C
| Up to 65°C || Up to 65°C
|-
|-
! scope=row| Substrate batch
! scope=row style="text-align: left;" | Substrate batch
| 1-25 wafers || 1-25 wafers
| 1-25 wafers || 1-25 wafers
|-
|-
! scope=row| Substrate size
! scope=row style="text-align: left;" | Substrate size
|  
|  
*100 mm wafers
*100 mm wafers
Line 555: Line 553:
*150 mm wafers
*150 mm wafers
|-
|-
! scope=row| Materials allowed
! scope=row style="text-align: left;" | Materials allowed
|  
|  
*Silicon
*Silicon
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Strip"