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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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Line 18: Line 18:
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
|-
! scope=row| Purpose  
! scope=row style="text-align: left;" | Purpose  
| Resist descum
| Resist descum
|
|
Line 29: Line 29:
| Metal lift-off
| Metal lift-off
|-
|-
! scope=row| Method
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
| Plasma ashing
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| Solvent & ultrasonication
| Solvent & ultrasonication
|-
|-
! scope=row| Process: Gasses
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
| O<sub>2</sub> (50 sccm)
|
|
Line 48: Line 48:
| NA
| NA
|-
|-
! scope=row| Process: Power
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
Line 55: Line 55:
| NA
| NA
|-
|-
! scope=row| Process: Solvent
! scope=row style="text-align: left;" | Process solvent
| NA
| NA
| NA
| NA
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*IPA (rinsing agent)
*IPA (rinsing agent)
|-
|-
! scope=row| Substrate: Batch
! scope=row style="text-align: left;" | Substrate batch
|
|
*Chips: several
*Chips: several
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*150 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
! scope=row| Substrate: Materials
! scope=row style="text-align: left;" | Substrate materials
|
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*<span style="color:red">'''No polymer substrates'''</span><br>
Line 132: Line 132:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Process parameter !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum|Descum]] !! Surface treatment !! Other ashing of organic material
! !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|-
|-
! scope=row| Process pressure
! scope=row style="text-align: left;" | Process pressure
| 1.3 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|-
|-
! scope=row| Process gasses
! scope=row style="text-align: left;" | Process gasses
|  
|  
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
Line 151: Line 153:
*O<sub>2</sub>
*O<sub>2</sub>
|-
|-
! scope=row| Process power
! scope=row style="text-align: left;" | Process power
| 1000 W || 200 W || 150-1000 W || 150-1000 W
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|-
|-
! scope=row| Process time
! scope=row style="text-align: left;" | Process time
| 20-90 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|-
|-
! scope=row| Substrate batch
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-25 || 1 || 1
| 1-25 || 1-2 || 1-25 || 1 || 1
|}
|}


Line 167: Line 169:


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
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<br clear="all" />


Line 174: Line 175:


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
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<br clear="all" />


=Plasma Asher 3: Descum=
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
[[image:2017-03-15 13.12.45.jpg|400px|thumb|Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.]]
Product name: Diener Pico Plasma Asher<br>
Product name: Diener Pico Plasma Asher<br>
Year of purchase: 2014
Year of purchase: 2014
Line 190: Line 190:
Pressure: 0.2-0.8 mbar<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100%<br>
Power: 100 W (100%)<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>


Line 203: Line 203:


=Plasma Asher 4=
=Plasma Asher 4=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
[[File:PA5 front.jpg|400px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
Year of purchase: 2024
Line 240: Line 240:
{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 500 sccm || 200 sccm
| 500 sccm || 200 sccm
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| Tested parameter || Tested parameter
| Tested parameter || Tested parameter
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.25 mbar || 1.3 mbar
| 1.25 mbar || 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C  
| 43°C || 47°C  
|}
|}
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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 150 sccm || 200 sccm
| 150 sccm || 200 sccm
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| Tested parameter || Tested parameter
| Tested parameter || Tested parameter
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 55°C  
| 43°C || 55°C  
|}
|}
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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate !! Full boat
! !! Single substrate !! Full boat
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1 || 25  
| 1 || 25  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm  
| 100 mm || 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber  
| Center of chamber || Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat  
| Center of boat || Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| Tested parameter || Tested parameter  
| Tested parameter || Tested parameter  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar || 1.3 mbar
| 1.3 mbar || 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W  
| 1000 W || 1000 W  
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes  
| 2 minutes || 10 minutes  
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C  
| 43°C || 47°C  
|}
|}
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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows temperature
| Ashing rate follows Power
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| 1000 W 
| Tested parameter
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| Tested parameter
| 40°C
|}
|}


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{| class="wikitable"
{| class="wikitable"
|-
|-
! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows power
| Ashing rate follows temperature
|-
|-
! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| Tested parameter
| 1000 W
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 40°C
| Tested parameter
|}
|}


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==Overview of wet bench 06 and 07==
==Overview of wet bench 06 and 07==
 
{| class="wikitable"
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|-
 
!  !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]] !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-style="background:silver; color:black"
|-
|
! scope=row style="text-align: left;" | Process
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  
| Wet resist strip || Metal lift-off process
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-  
 
|-style="background:whitesmoke; color:black"
!General description'''
|Wet stripping of resist
|Lift-off process
|-
|-
 
! scope=row style="text-align: left;" | Chemical
|-style="background:silver; color:black"
| Remover 1165 (NMP) || Remover 1165 (NMP)
!Chemical solution
|NMP Remover 1165
|NMP Remover 1165
|-
|-
 
! scope=row style="text-align: left;" | Process temperature
|-style="background:whitesmoke; color:black"
| Up to 65°C || Up to 65°C
!Process temperature
|Up to 65°C
|Up to 65°C
|-
|-
 
! scope=row style="text-align: left;" | Substrate batch
|-style="background:silver; color:black"
| 1-25 wafers || 1-25 wafers
!Batch size
|
1 - 25 wafers
|
1 - 25 wafers
|-
|-
 
! scope=row style="text-align: left;" | Substrate size
|-style="background:whitesmoke; color:black"
|  
!Size of substrate
|
*100 mm wafers
*100 mm wafers
*150 mm wafers
*150 mm wafers
Line 573: Line 553:
*150 mm wafers
*150 mm wafers
|-
|-
 
! scope=row style="text-align: left;" | Materials allowed
|-style="background:silver; color:black"
|  
!Allowed materials
|
*Silicon
*Silicon
*Silicon Oxide
*Silicon oxide
*Silicon Nitride
*Silicon nitride
*Silicon Oxynitride
*Silicon oxynitride
|
| All metals except Type IV (Pb, Te)
All metals except Type IV (Pb, Te)
|-
|}
|}


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