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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip click here]'''
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
 
[[Category: Equipment|Lithography strip]]
[[Category: Lithography|Strip]]
 
__TOC__


= Strip Comparison Table =
= Strip Comparison Table =
{| border="2" cellspacing="0" cellpadding="2"  
{| class="wikitable"
|-
!
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4 (Clean)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
! scope=row style="text-align: left;" |  Purpose
| Resist descum
|
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
| Resist stripping
| Metal lift-off
|-
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
| Solvent & ultrasonication
| Solvent & ultrasonication
|-
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
| NA
| NA
|-
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
| NA
| NA
|-
! scope=row style="text-align: left;" | Process solvent
| NA
| NA
| NA
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
! scope=row style="text-align: left;" | Substrate batch
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|-
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates (only if clean)
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
 
<br clear="all" />


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
= Plasma Ashing process parameters=
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Rough Acetone Strip|Rough Acetone Strip]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Fine Acetone Strip|Fine Acetone Strip]]</b>


{| class="wikitable"
|-
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose
! !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*All purposes
|style="background:WhiteSmoke; color:black"|
*Clean wafers only, no metal
|style="background:WhiteSmoke; color:black"|
*III-V materials only
|style="background:WhiteSmoke; color:black"|
*Resist strip
|style="background:WhiteSmoke; color:black"|
*Resist strip
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Method
! scope=row style="text-align: left;" | Process pressure
|style="background:LightGrey; color:black"|Minimum feature size
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
! scope=row style="text-align: left;" | Process gasses
|style="background:LightGrey; color:black"|Positive Process
|  
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (100 sccm)
*
*N<sub>2</sub> (100 sccm)
|style="background:WhiteSmoke; color:black"|
|
*
*O<sub>2</sub> (45 sccm)
|style="background:WhiteSmoke; color:black"|
|
*
*O<sub>2</sub> (100 sccm)
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub> (100 sccm)
*
|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub>
*
*N<sub>2</sub>
 
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
|-
|style="background:LightGrey; color:black"|Negative Process
! scope=row style="text-align: left;" | Process power
|style="background:WhiteSmoke; color:black"|
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Process time
|style="background:LightGrey; color:black"|Batch size
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 50 mm wafer
*1 - 30 100 mm wafers
*1 - 30 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 50 mm wafer
*1 - 30 100 mm wafers
*1 - 30 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 50 mm wafer
*1 100 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 - 25 100 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 - 25 100 mm wafers
 
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Substrate batch
|style="background:WhiteSmoke; color:black"|
| 1-25 || 1-2 || 1-25 || 1 || 1
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
*Metal patterning
|style="background:WhiteSmoke; color:black"|
*No metal!
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*III-V compounds
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|-
|}
|}


<br clear="all" />
<br clear="all" />


=Plasma Asher 1 =
=Plasma Asher 1=
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
<br clear="all" />
 
=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
 
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|400px|thumb|Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.]]
Product name: Diener Pico Plasma Asher<br>
Year of purchase: 2014
 
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
 
In this machine, only Oxygen is used for processing.
 
<b>Typical process parameters:</b><br>
Process: Photoresist descumming<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100 W (100%)<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
 
Other materials have not been tested.
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
===Process Information===
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].


The Plasma Asher1( 300 auto load model) can be used for the following process:
<br clear="all" />


=Plasma Asher 4=
[[File:PA5 front.jpg|400px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
The Plasma Asher 4 can be used for the following processes:
*Photoresist stripping
*Photoresist stripping
*Surface cleaning after storage
*Descumming
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Removal of organic passivation layers and masks
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
 
*Removal of organic passivating layers and masks
 
*Etching of glass and ceramic
Plasma asher 4 has the following material restrictions:
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*No metals allowed
*Removal of polyimide layers
*No metal oxides allowed
*No III-V materials allowed
 
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
 
'''Typical stripping parameters'''<br>
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20-30 minutes
*Time (full boat): 90 minutes
 
<br clear="all" />
 
==Process gas ratio for plasma asher 4 & 5==
[[File:PA_gas_mix_v3.png|400px|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers. The green area (~50% N<sub>2</sub>) covers the optimum range for both situations.|right]]
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Process development tests found that a gas mix of 50% nitrogen gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
 
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
 
{| class="wikitable"
|-
!  !! Single substrate !! Full boat
|-
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
|-
! scope=row style="text-align: left;" | Wafers
| 1 || 25
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| 500 sccm || 200 sccm
|-
! scope=row style="text-align: left;" | Gas mix ratio
| Tested parameter || Tested parameter
|-
! scope=row style="text-align: left;" | Chamber pressure
| 1.25 mbar || 1.3 mbar
|-
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes
|-
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 47°C
|}
 
<br clear="all" />
 
==Process chamber pressure for plasma asher 4 & 5==
[[File:PA_chamber_pressure_v3.png|400px|thumb|Ashing rate as function of chamber pressure when processing a single substrate and when processing a full boat with 25 substrates. The green area covers the optimum range (~1.3 mbar) for both situations.|right]]
The ashing rate is related to the chamber pressure during processing. Process development tests found that 1.3 mbar gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.


The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.


{| class="wikitable"
|-
!  !! Single substrate !! Full boat
|-
! scope=row style="text-align: left;" | Test results
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
|-
! scope=row style="text-align: left;" | Wafers
| 1 || 25
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| 150 sccm || 200 sccm
|-
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
|-
! scope=row style="text-align: left;" | Chamber pressure
| Tested parameter || Tested parameter
|-
! scope=row style="text-align: left;" | Power
| 1000 W || 1000 W
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes || 10 minutes
|-
! scope=row style="text-align: left;" | Test average temperature
| 43°C || 55°C
|}


==Process Information==
<br clear="all" />
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]]


==Process gas flow rate for plasma asher 4 & 5==
[[File:PA_flowRate_v4.png|400px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers. The green area covers the optimum range (~200 sccm) for both situations.|right]]
The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. The experiments indicate that the gas flow rate has only a minor impact on the ashing rate.


==Overview of typical processes==
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.


{| border="2" cellspacing="0" cellpadding="4" align="left"
{| class="wikitable"
!
|-
! Photoresist stripping
!  !! Single substrate !! Full boat
! Surface treatment of plastic, ceramic and metal
|-
! Ashing of organic material
! scope=row style="text-align: left;" | Test results
|-  
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
|'''Process pressure'''
|-
|0.8- 1.0mbar
! scope=row style="text-align: left;" | Wafers
|0.5- 1.0mbar
| 1 || 25
|0.8-1.5mbar
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm || 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber || Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat || Center of boat
|-
|-
|'''Process gases'''
! scope=row style="text-align: left;" | Total gas flow rate
|O<sub>2</sub>, N<sub>2</sub>
| Tested parameter || Tested parameter
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
|O<sub>2</sub>
|-
|-
|'''Process  power'''
! scope=row style="text-align: left;" | Gas mix ratio
|600-1000W
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
|150-300W
|1000W or less for heat- sensitive materials
|-
|-
|'''Process  time'''
! scope=row style="text-align: left;" | Chamber pressure
|5-60min, depending of photoresist thickness
| 1.3 mbar || 1.3 mbar
|a few seconds to a few minutes
|Between 0.5 and 20 hours, depending on the material
|-
|-
|'''Batch size'''
! scope=row style="text-align: left;" | Power
|1-10 wafers at a time
| 1000 W || 1000 W
|1 wafer at a time
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
|-
|-
|'''Size of substrate'''
! scope=row style="text-align: left;" | Test processing time
|2"-6"  
| 2 minutes || 10 minutes
|2"-6"
|2"-6"
|-
|-
|'''Allowed materials'''
! scope=row style="text-align: left;" | Test average temperature
|All
| 43°C || 47°C
|All
|}
|All


<br clear="all" />
==Process power for plasma asher 4 & 5==
[[File:PA_power_v3.png|400px|thumb|Ashing rate as function of microwave power.|right]]
The ashing rate is related to the power used during processing. Higher power increases ashing rate.
{| class="wikitable"
|-
!  !! Single substrate
|-
! scope=row style="text-align: left;" | Test results
| Ashing rate follows Power
|-
! scope=row style="text-align: left;" | Wafers
| 1
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm
|-
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
|-
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
|-
! scope=row style="text-align: left;" | Power
| Tested parameter
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
|-
|-
! scope=row style="text-align: left;" | Test average temperature
| 40°C
|}
|}


<br clear="all" />
<br clear="all" />


A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
==Process temperature for plasma asher 4 & 5==
[[File:PA_temperature_v2.png|400px|thumb|Ashing rate as function of temperature.|right]]
The ashing rate is related to the temperature during processing. Higher temperature increases ashing rate.


=Plasma Asher 2 =
{| class="wikitable"
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]
|-
!  !! Single substrate
|-
! scope=row style="text-align: left;" | Test results
| Ashing rate follows temperature
|-
! scope=row style="text-align: left;" | Wafers
| 1
|-
! scope=row style="text-align: left;" | Wafer size
| 100 mm
|-
! scope=row style="text-align: left;" | Boat position
| Center of chamber
|-
! scope=row style="text-align: left;" | Test wafer position
| Center of boat
|-
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm
|-
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
|-
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
|-
! scope=row style="text-align: left;" | Power
| 1000 W
|-
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
|-
! scope=row style="text-align: left;" | Test average temperature
| Tested parameter
|}


The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
<br clear="all" />


In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5==
[[File:PA_comparison_v3.png|400px|thumb|Comparison of ashing rate with different substrate sizes. Process was done using a single substrate placed in the middle of the glass boat, which was placed in the center of the chamber.|right]]
The ashing rate is highest for 100 mm substrates, lower for 150 mm substrates and even lower for 200 mm substrates.  


The typical process parameters when operating the equipment:
All substrate sizes follows the same pattern:
*Photeresist stripping
*Ashing rate increases with a higher percentage nitrogen in the gas mix
Pressure: 0.8 - 1.0 mbar
*Ashing rate increases with a higher chamber pressure
*The total gas flow has only little influence on the ashing rate, but <i>slightly</i> favors the lower flow rate of 200 sccm, similar to previous experiment results


Gas: O2
<br clear="all" />


Power: 600 - 1000 watts
'''Process parameter impact on ashing rate'''<br>
Investigating the ashing rate using linear regression models on the process parameters, indicates that the gas mix and the chamber pressure has a significant impact on the ashing rate, while the gas flow has only little effect:
<gallery mode="packed-hover" heights="150">
ParamEffect_100_mm_v1.png|100 mm parameter impact
ParamEffect_150_mm_v1.png|150 mm parameter impact
ParamEffect_200_mm_v1.png|200 mm parameter impact
</gallery>


Time: 5 -30 min., depending on photoresist type and thickness
<br clear="all" />


A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.  
=Plasma Asher 5=
[[File:PA5 front.jpg|400px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024


A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
The Plasma Asher 5 can be used for the following processes:
At a load at 2 Fused silicawafers resist removed 0.01-01,5um
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks


The other materials have not been tested yet.


=III-V Plasma Asher =
Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for:
*Etching of glass and ceramic
*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Removal of polyimide layers




=Rough Acetone Strip=
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
{| border="1" cellspacing="0" cellpadding="4" align="right"
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
|-
|}


This acetone strip is only for wafers without metal and SU-8.
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''


There are two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
===Process Information===
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|here]].




'''Here are the main rules for acetone strip use:'''
'''Processes specifically only for plasma asher 5:'''<br>
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]]
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
*Rinse your wafers for 4-5 min. in running water after stripping .


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=Overview of acetone benches=
=Resist Strip=
[[Image:Resist_strip.jpg|400px|thumb|Resist strip bench in D-3]]
 
This resist strip is only for wafers without metal and SU-8.
 
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
 
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
 
 
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''


{| border="2" cellspacing="0" cellpadding="4" align="left"
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!  
 
! Acetone strip
==Overview of wet bench 06 and 07==
! Lift-off  
{| class="wikitable"
|-  
|-
|'''General description'''
!  !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|
|-
wet stripping of resist
! scope=row style="text-align: left;" | Process
|
| Wet resist strip || Metal lift-off process
lift-off process
|-
|-
|'''Chemical solution'''
! scope=row style="text-align: left;" | Chemical
|CH<sub>3</sub>COCH<sub>3</sub>
| Remover 1165 (NMP) || Remover 1165 (NMP)
|CH<sub>3</sub>COCH<sub>3</sub>
|-
|-
|'''Process temperature'''
! scope=row style="text-align: left;" | Process temperature
|20 <sup>o</sup>C
| Up to 65°C || Up to 65°C
 
|20 <sup>o</sup>C
 
|-
|-
 
! scope=row style="text-align: left;" | Substrate batch
|'''Batch size'''
| 1-25 wafers || 1-25 wafers
|
1-25 wafers at a time
|
1-25 wafer at a time
|-
|-
|'''Size of substrate'''
! scope=row style="text-align: left;" | Substrate size
|
*100 mm wafers
*150 mm wafers
|
|
4" wafers
*100 mm wafers
|
*150 mm wafers
4" wafers
|-
|-
|'''Allowed materials'''
! scope=row style="text-align: left;" | Materials allowed
|
|  
*Silicon
*Silicon
*Silicon Oxide
*Silicon oxide
*Silicon Nitride
*Silicon nitride
*Silicon Oxynitride
*Silicon oxynitride
| All metals except Type IV (Pb, Te)
|}


|
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*All metals
 
|-
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Strip"