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Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/SiO2 click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/SiO2 click here]''' <br>
{{CC-bghe1}}
 


{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
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|-style="background:Black; color:White"
|-style="background:Black; color:White"
!Results  
!Results  
!SiO2 Etch Slow ''Test by Artem Shikin @ Fotonik''
!SiO2 Etch Slow  
|-
|-
|Etch rate of PECVD BPSG
|Etch rate of PECVD BPSG
|'''39.4nm/min (22-01-2016)'''
|'''39.4nm/min (22-01-2016)''' ''Test by Artem Shikin @ Fotonik''
|-
|-
|Etch rate in thermal oxide
|Etch rate in thermal oxide
|'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape  
|
'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape <br>
'''40-50 nm/min''' bghe (2019-2021 5 tests)
|-
|-
|Selectivity to  resist [:1]
|Selectivity to  resist [:1]
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|-
|-
|Wafer uniformity (100mm)
|Wafer uniformity (100mm)
|Not known
|
+-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests)
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
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