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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/SEM_LEO0 click here]'''
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'''<p style="color:red;">The SEM LEO  has been decomissioned and relocated to DTU Mechanics in 2020.</p>'''


=SEM LEO=
=SEM LEO=
[[image:IMG_3290.jpg|400x400px|right|thumb|The SEM LEO located in cleanroom F-2]]


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/ALD_Picosun_R200 click here]'''
The SEM LEO was a very reliable and rugged instrument that provided high quality SEM  images of most samples and it served the users of the cleanroom for many years. Excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers were acquired by the thousands on the SEM.  


[[Category: Equipment|Thin film]]
In her later years the SEM LEO was equipped with a Raith e-beam lithography system and was exclusively dedicated to the users of the Raith E-beam lithography.
[[Category: Thin Film Deposition|ALD]]


== ALD - Atomic layer deposition ==
===Typical current values for EBL===
[[image:ALD.jpg|300x300px|right|thumb|Picosun R200 ALD, positioned in cleanroom F-2.]]
Reported values are the average of five measurements from Elphy Quantum using the EBL holder's Faraday cup. All values in pA.


The Picosun R200 ALD (atomic layer deposition) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>,TiO<sub>2</sub> or Pt (not testet yet) on different samples.
{| border="1" style="text-align: center; width: 320px; height: 200px;"
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Each process is using two different precurcors. The reaction takes place in cycles. During each cycle a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precurcor is removed from the chamber before the next one is introduced. In that way the ALD layer will be deposited atomic layer by atomic layer.
|colspan="6" style="text-align: center;" style="background: #efefef;" | '''LEO - Current measurements 11/02/2017'''


In order to ensure that the ALD reactor has the same temperature eveywhere, it has a dual chamber structure. The inner chamber is the ALD reactor with the sample holder, and the outer chamber is a vacuum chamber that is isolating the reactor from room air. The space between the two chambers is called an intermediate space (IMS). The IMS is connected to a nitrogen carrier gas line.
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!scope="row" |&nbsp;
!|5kV
!|10kV
!|15kV
!|20kV


When the reactor chamber is heated up or cooled down, it will take some time before the sample holder and the sample reach the desired temperature. Thus, it is important to include a temperature stabilization time in the process recipes.
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The ALD deposition takes place in the reactor chamber. All precursor and nitrogen carrier gas lines are connected to the reactor chamber through separate gas lines. The percursors pulse time is controlled using special ALD valves, that allow very short precursors pulses to be introduced into the ALD reactor and a at the same time allow a constant nitrogen purge. 


The ALD reaction takes place under vacuum, thus a vacuum pump is connected to the bottom of the ALD reactor. The pump is located in the basement.  
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!10um
The liquid precursors (TMA, TiCl4, MeCpPtMe<sub>3</sub> and H<sub>2</sub>O) are located in the cabinet below the ALD chamber. When these precursors are not in use, the manual valves have to be closed. Ozone is generated by use of an ozone generator that is located on the side of the machine.
|13
 
|17
It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer.
|20.5
|25
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!20um
|62
|87
|105
|127
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!30um
|160
|175
|215
|264
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!60um
|510
|680
|850
|1040
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A short presentation with some information about the ALD tool can be found [[Media:ProcessMeeting ALD 2013-12-06_1.pdf|here]].
==Equipment performance==
 
 
'''The user manual, the user APV and contact information can be found in LabManager:'''
 
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=321 ALD Picosun R200 info page in LabManager],
 
== Process information ==
 
*[[/Standard recipes on the ALD tool|Standard recipes on the ALD tool]]
*[[/Results from the ALD acceptance test|Results from the ALD acceptance test]]
*[[/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
*[[/TiO2 deposition using ALD|TiO<sub>2</sub> deposition using ALD]]
 
==Equipment performance and process related parameters==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>ALD Picosun R200</b>
|style="background:WhiteSmoke; color:black"|<b>SEM LEO (Leo 1550 SEM)</b>
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Purpose
|style="background:LightGrey; color:black"|Imaging and measurement of
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
|-
|style="background:LightGrey; color:black"|Other purpose
|style="background:WhiteSmoke; color:black"|
*E-beam lithography using Raith Elphy Quantum system
|-
!style="background:silver; color:black;" align="center" width="60"|Location
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Cleanroom of DTU Nanolab
|-
!style="background:silver; color:black;" align="center" width="60"|Performance
|style="background:LightGrey; color:black"|Resolution
|style="background:WhiteSmoke; color:black"|
*~ 5 nm (limited by vibrations)
The resolution is strongly dependent on the type of sample and the skills of the operator.
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics
|style="background:LightGrey; color:black"|ALD (atomic layer deposition) of
|style="background:LightGrey; color:black"|Detectors
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>
*Secondary electron (Se2)
*TiO<sub>2</sub>
*Inlens secondary electron (Inlens)
*Pt (not tested yet)
*Backscatter electron (BSD)
Please note that it might not be possible to deposit all marials at the same time
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Stage
|style="background:LightGrey; color:black"|Deposition rates
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending of the temperature)
*X, Y: 125 &times; 100 mm
*TiO<sub>2</sub>: Not measured
*T: 0 to 90<sup>o</sup>
*Pt: Not measured
*R: 360<sup>o</sup>
*Z: 48 mm
|-
|-
|style="background:LightGrey; color:black"|Thickness
|style="background:LightGrey; color:black"|Electron source
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
*FEG (Field Emission Gun) source
*TiO<sub>2</sub>: 0 - 100 nm
*Pt: ?
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Operating pressures
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C
*Fixed at High vacuum (2 &times; 10<sup>-5</sup>mbar - 10<sup>-6</sup>mbar)
*TiO<sub>2</sub>: ?
*Pt: ?
|-
|-
|style="background:LightGrey; color:black"|Precursors
|style="background:LightGrey; color:black"|Options
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*TMA
*Raith Elphy Quantum E-Beam Litography system
*TiCl<sub>4</sub>
*H<sub>2</sub>O
*O<sub>3</sub>
*O<sub>2</sub>
*MeCpPtMe<sub>3</sub> (not mounted yet)
Please note that not all precursors might be mounted on the tool at the same time
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-5 100 mm wafers
*Wafers up to 6" (only full view up to 4")
*1-5 150 mm wafers
*Several smaller samples
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
*Any standard cleanroom materials.
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Al, Al<sub>2</sub>O<sub>3</sub>
*Ti, TiO<sub>2</sub>
*Other metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|-  
|-  
|}
|}
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