Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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==Anneal-oxide furnace (C1)== | ==Anneal-oxide furnace (C1)== | ||
[[Image:C1.JPG|thumb|300x300px|Anneal-oxide furnace (C1). Positioned in cleanroom B-1]] | [[Image:C1.JPG|thumb|300x300px|Anneal-oxide furnace (C1). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]] | ||
The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace. | The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 100 mm and 150 mm wafers can be processed in the furnace. | ||
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The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace. | The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace. | ||
Oxygen is | Oxygen is used as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature. | ||
Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C). | Annealing can be done for silicon wafers with layers of e.g. silicon oxide, silicon nitride, polysilicon or BPSG glass (deposited in PECVD4). The annealing recipes are named e.g. "ANN1000" (for annealing at 1000 <sup>o</sup>C). | ||
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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide furnace (C1)]''' | '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide furnace (C1)]''' | ||
==Process knowledge== | ==Process knowledge== | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness and quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers) | *Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow a thicker dry oxide layers) | ||
*Wet SiO<sub>2</sub>: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C) | *Wet SiO<sub>2</sub>: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/C1 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||