Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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-'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace click here]'''
+'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/A3_Phosphor_Drive-in_furnace click here]'''
+''This page is written by DTU Nanolab  internal''
 [[Category: Equipment |Thermal A3]]
 [[Category: Thermal process|Furnace]]
 [[Category: Furnaces|A3]]
 ==Phosphorus Drive-in furnace (A3)==
-[[Image:A3helstak.jpg|thumb|400x400px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1]]
+[[Image:A3helstak.jpg|thumb|400x400px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]
 The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation.
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 '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=82 Phosphorus Drive-in furnace (A3)]'''
 ==Process knowledge==
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-*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br>
+*[http://labmanager.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br>
-*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1988 The newest QC data for wet and dry oxide]<br>
+*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=82 The newest QC data for wet and dry oxide]<br>
 {| {{table}}
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 Numbers from March 2020
 |}
 ==Overview of the performance of the phosphorus drive-in furnace and some process related parameters==
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 *Thermal oxidation of Si wafers
 *Driving-in pre-deposited or ion-implanted phosphorus
-|style="background:WhiteSmoke; color:black"|Oxidation:
+|style="background:WhiteSmoke; color:black"|
 Thermal oxidation:
 *Dry oxidation using O<sub>2</sub>
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 !style="background:silver; color:black" align="center"|Performance
-|style="background:LightGrey; color:black"|Film thickness
+|style="background:LightGrey; color:black"|Film thickness and quality
 |style="background:WhiteSmoke; color:black"|
 *Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
-*Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
+*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
+* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A3 furnace break-down voltage measurement results|Break-down voltage measurement results]]
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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 *N<sub>2</sub>
 *O<sub>2</sub>
-*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into water vapour for wet oxidation)
+*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into H<sub>2</sub>O for wet oxidation)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers (RCA cleaned)
-*Wafers from the the Phosphorus Pre-dep furnace (A4 )can go directly into the furnace
+*Wafers coming from the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench can go directly into the furnace
 |-
 |}