Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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Oxidation of silicon wafers (e.g. gate oxide layers) | Oxidation of silicon wafers (e.g. gate oxide layers) | ||
|style="background:WhiteSmoke; color:black"|Oxidation: | |style="background:WhiteSmoke; color:black"|Oxidation: | ||
*Dry oxidation using O<sub>2</sub> | *Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub> | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness and quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | *Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A2 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||