Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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[[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']] | [[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']] | ||
The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor). | The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is a very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor). | ||
Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature. | Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature. | ||
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
Oxidation of silicon wafers (e.g. gate oxide layers) | |||
|style="background:WhiteSmoke; color:black"|Oxidation: | |style="background:WhiteSmoke; color:black"|Oxidation: | ||
*Dry oxidation using O<sub>2</sub> | *Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub> | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness and quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | *Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A2 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*800-1150 <sup>o</sup>C | *800 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
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*1 atm (no vacuum) | *1 atm (no vacuum) | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Gases on the system | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub> | *N<sub>2</sub> | ||