Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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[[Category: Equipment |Thermal A1]] | [[Category: Equipment |Thermal A1]] | ||
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==Boron Drive-in and Pre-dep furnace (A1)== | ==Boron Drive-in and Pre-dep furnace (A1)== | ||
[[Image:A1.JPG|thumb|400x400px|Boron Drive-in and Pre-dep furnace (A1). Positioned in cleanroom B-1]] | [[Image:A1.JPG|thumb|400x400px|Boron Drive-in and Pre-dep furnace (A1). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]] | ||
The Boron Drive-in and Pre-dep furnace (A1) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Also boron pre-deposition/doping is done furnace. Furthermore, the furnace is used for boron drive-in after the pre-deposition or after boron ion implantation. | The Boron Drive-in and Pre-dep furnace (A1) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Also boron pre-deposition/doping is done in this furnace. Furthermore, the furnace is used for boron drive-in after the pre-deposition or after boron ion implantation. | ||
The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature. | The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature. | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness and quality||style="background:WhiteSmoke; color:black"| | ||
*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) | *Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) | ||
*Wet oxide: ~ 0 nm | *Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A1 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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*1 atm (no vacuum) | *1 atm (no vacuum) | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Gases on the system | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub> | *N<sub>2</sub> | ||
*O<sub>2</sub> | *O<sub>2</sub> | ||
*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into | *H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into H<sub>2</sub>O vapour for wet oxidation) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||