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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation) click here]'''
'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation) click here]'''
 
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


==Oxidation==
==Oxidation==
At DTU Nanolab we have seven furnaces for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorous Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C3) and Multipurpose Annealing furnace.
At DTU Nanolab we have eight furnaces and one RTP (rapid thermal processors) which can be used for thermal oxidation of silicon samples: Boron Drive-in and Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorus Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C4), Oxidation 8" furnace (E1), Resist Pyrolysis furnace and RTP Annealsys.
 
Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation.
 
 
*Dry oxidation is used to grow 5 nm - 300 nm of oxide in the furnaces: A1, A2, A3, C1, C3, C4 and Multipurpose Anneal.
*Wet oxidation is used to grow up to 3 µm of oxide in the furnaces: A1, A3, C1 and C3.


*Wafers with oxide layers thicker than >3 µm cannot be made in the cleanroom and will have to be bought (but check the wafer shop first - there might be some on stock).
Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slowest for dry oxidation.


*Dry oxidation is used to grow 5 nm - 300 nm of silicon oxide. Dry oxidation can be done in the A1, A2, A3, C1, C3, C4, E1 and Resist Pyrolysis furnaces.
*Wet oxidation is used to grow up to ~3 µm of silicon oxide. Wet oxidation can be done in the A1, A3, C1, C3 and E1 furnaces.


Thermal oxidation can done at temperatures up to 1150 C (but only 1100 C in C1 furnace and the Multipurpose Anneal furnace). At these very high temperatures, the quartz tube in the furnaces might start to deform, so therefore the oxidation times are restricted:
Wafers with oxide layers thicker than ~3 µm can normally not be made in the cleanroom and will have to be bought from somewhere else (but check the wafer shop first - there might be some on stock). It is NOT allowed to oxidize the same wafers two times to get a thicker layer than 3 µm without approval.


Thermal oxidation can done at temperatures up to 1050 C - 1150 C, depending on the furnace - and especially the diameter of the quartz tube in the furnace. At these high temperatures, the quartz tube might start to deform, so therefore the oxidation times are restricted:


*Maximum allowed oxidation time at 1150 C: 8 hours
*A1, A2, A3, C3 and C4 furnaces: Maximum allowed oxidation time at 1150 C: 8 hours
*Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide)
*A1, A2, A3, C1, C3, C4 and E1 furnaces: Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide)
*Resist Pyrolysis furnace: Maximum allowed oxidation time at 1050 C: 3 hours




The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:  
The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:  


 
*[[Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]
*[[Specific Process Knowledge/Thermal Process/A1 Furnace Boron drive-in|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]
*[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]]
*[[Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace|Standard recipes, QC limits and results for the Phosphorus Drive-in furnace (A3)]]


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*[[Specific Process Knowledge/Thermal Process/Oxidation/Standard oxidation recipes]]
*[[Specific Process Knowledge/Thermal Process/Oxidation/Standard oxidation recipes]]


==Comparison of the seven oxidation furnaces==
==Comparison of the oxidation furnaces==




{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="9" style="text-align:left;"  
|-
|-


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|
|
!
!
[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron Drive-in + Pre-dep furnace (A1)]]
[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron Drive-in and Pre-dep furnace (A1)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/A2_Gate_Oxide_furnace|Gate Oxide furnace (A2)]]
[[Specific_Process_Knowledge/Thermal_Process/A2_Gate_Oxide_furnace|Gate Oxide furnace (A2)]]
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[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal Bond furnace (C3)]]
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal Bond furnace (C3)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble|Multipurpose Annealing furnace]]
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Al-Anneal furnace (C4)]]
!
[[Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")|Oxidation 8" furnace (E1)]]
!
[[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace|Resist Pyrolysis furnace (research tool)]]
!
[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]]
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Dry and wet oxidation. Boron pre-deposition and boron drive-in of boron are also done in the furnace.
|
|Dry oxidation of gate oxide and other very clean oxides.
*Dry and wet oxidation  
|Dry and wet oxidation. Phosphorous drive-in is also done in the furnace.
*Boron pre-deposition and boron drive-in are also done in the furnace
|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.
|
|Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
*Dry oxidation of e.g. gate oxides layers
|Dry oxidation and annealing of almost all materials.
|
*Dry and wet oxidation
*Phosphorous drive-in is also done in the furnace  
|
*Dry and wet oxidation of 100 mm and 150 mm wafers  
*Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4  
|
*Dry and wet oxidation and annealing of wafers from the wafer bonders and from PECVD4 and PECVD3
|
*Dry oxidation of 100 mm wafers and small samples
|
*Dry and wet oxidation of 150 mm and 200 mm wafers
|
*Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists
|
*Rapid thermal processing:
**RTA (annealing)
**RTO (oxidation)
**RTN (nitridation)
**RTH (hydrogenation)
|-
|-


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|
|
*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
*Wet: Torch
*Wet: H<sub>2</sub>O (torch)
|
*Dry: O<sub>2</sub>
|
*Dry: O<sub>2</sub>
*Wet: H<sub>2</sub>O (torch)
|
*Dry: O<sub>2</sub>
*Wet: H<sub>2</sub>O (steamer)
|
|
*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
*Wet: H<sub>2</sub>O (bubbler)
|
|
*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
*Wet: Torch
|
|
*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
*Wet: Steamer
*Wet: H<sub>2</sub>O (steamer)
|
|
*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
*Wet: Bubbler
|
|
*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
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|
|
*N<sub>2</sub>
*N<sub>2</sub>
*H<sub>2</sub>
|
*N<sub>2</sub>
|
*N<sub>2</sub>
|
*Ar
*5% H<sub>2</sub>/Ar
|-
|-


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!Process temperature
!Process temperature
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*800 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*800 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*800 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*800 <sup>o</sup>C - 1100 <sup>o</sup>C
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*800 <sup>o</sup>C - 1150 <sup>o</sup>C
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*400 <sup>o</sup>C - 1150 <sup>o</sup>C
|
|
*900 <sup>o</sup>C - 1100 <sup>o</sup>C
*800 <sup>o</sup>C - 1100 <sup>o</sup>C
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*25 <sup>o</sup>C - 1050 <sup>o</sup>C
|
|
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
*700 <sup>o</sup>C - 1200 <sup>o</sup>C
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C  
|-
|-


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*1-30 100 mm wafers
*1-30 100 mm wafers
|
|
*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1-30 150 mm wafers
|
|
*1-30 50 mm wafers
*1-30 100 mm wafers
*Small samples on a carrier wafer, horizontal
*Small samples on a carrier wafer, horizontal
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-2 150 mm wafers, horizontal, less good uniformity
*Small samples on a carrier wafer, horizontal
|
|
*1-30 50 mm, 100 mm or 150 mm wafers  
*1-50 150 mm wafers
*1-50 200 mm wafers
*1-50 200 mm wafers
*Small samples on a carrier wafer, horizontal
|
|-
*1-30 50 mm wafers
 
*1-30 100 mm wafers
*1-30 150 mm wafers
*Small samples on a carrier wafers, horizontal
|
*Single-wafer process
*Chips on carrier
*100 mm or 150 mm wafers
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|
|
*All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace.
*All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace
|
|
*All wafers have to be RCA cleaned.
*All wafers have to be RCA cleaned  
|
|
*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4.
*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4
|
|
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4  
|
|
*All processed wafers have to be RCA cleaned, except for wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
*All processed wafers and samples have to be RCA cleaned, except for wafers from the wafers bonders and from PECVD4 and PECVD3
|
|
*Depends on the furnace quartz set:
*No RCA cleaning required
**Metal: Almost all materials, permission is needed
|
**Resist pyrolysis
*All processed wafers have to be RCA cleaned.
|
*Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed
|
*Silicon
*Silicon Nitride
*Aluminum Oxide
|-
|-
|}
|}
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</gallery>
</gallery>


==Breakdown voltage measurements==
In order to evaluate the quality of the oxide layers that can be grown in the oxidation furnaces, some breakdown voltage measurement have been made.


===Breakdown voltage measurements===
The results can be found on this page:


*[[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements]]
*[[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements]]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Oxidation"