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== Comparing methods for etching bulk glass at Danchip ==
== Comparing methods for etching bulk glass at DTU Nanolab ==


Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE]] using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.  
Etching of glass can be done either wet or dry. Wet etching is done with HF. Dry etching can be done either with [[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE]], ASE or Pegasus 4 using fluorine chemistry (only fused silica) or with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE]] by sputtering with Ar ions and/or using fluorine chemistry.  


At DTU Nanolab, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a concentrated HF-solution (isotropic etch).
At DTU Nanolab, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a concentrated HF-solution (isotropic etch).
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*~75 nm/min (Thermal oxide) in BHF
*~75 nm/min (Thermal oxide) in BHF
*~90 nm/min (Thermal oxide) in SIO Etch
*~80 nm/min (Thermal oxide) in BOE 7:1 Etchant VLSI with Surfactant
*~25 nm/min (Thermal oxide) in 5%HF
*~25 nm/min (Thermal oxide) in 5%HF
*~3-4µm/min in 40%HF
*~3-4µm/min in 40%HF