Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]''' | |||
===As the system is not being used for deposition this information is no long relevant=== | |||
It is being kept in case we will start up the deposition again.<br> | |||
<!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] --> | |||
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|colspan="6" style="text-align: center | |colspan="6" style="text-align: center;" | '''Material parameters for using the crystal monitors''' | ||
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! | !2014-07-22 | ||
| | |157.3% (wafer center) | ||
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! | !2015-09-08 | ||
| | |132 % | ||
|B2 | |B2 | ||
|B3 | |B3 | ||
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|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for | |colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for crystal thickness monitor 2''' | ||
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