Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
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=Some general process trends= | =Some general process trends= | ||
This page is | This page is gathering some general process trends and good advice for designing IBE recipes. So far these trends have been developed etching Si with resist as masking material and by etching some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ nanolab before 2012.'' In the lower section you find optimization tips from Oxford Instruments. | ||
==Etch rate== | ==Etch rate== | ||
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=General tips for finding etching parameters (given by Oxford Instruments, used with permission)= | =General tips for finding etching parameters (given by Oxford Instruments [https://plasma.oxinst.com/products/ion-beam/ionfab], used with permission)= | ||
One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage. | One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage. | ||
*Beam voltage – depends on application, 200-800eV. | *Beam voltage – depends on application, 200-800eV. | ||