Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

Latest revision as of 14:23, 4 September 2025

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	BHF	ICP Metal Etcher
Generel description	Wet etch of TiO2 (ALD)	Dry etch of TiO2
Etch rate range	2,5 nm/min	It has not been explored current recipe ~8 nm/min
Etch profile	Isotropic	Anisotropic
Substrate size	Any size (in beaker)	Samples < 150 mm wafers on carrier one 150 mm wafer at a time
Allowed materials	In beaker: Any material	silicon, silicon oxides and nitrides Al, Cr, Ti (incl. oxides and nitrides) Ta, W, Nb (incl. oxides and nitrides)

@@ Line 10: / Line 10: @@
-==Comparison of Titanium Oxide (ALD) etch Methods [[Image:section under construction.jpg|70px]]==
+==Comparison of Titanium Oxide (ALD) etch Methods ==
 {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
@@ Line 34: / Line 34: @@
 |2,5 nm/min
 |
-*~30nm/min (pure Al)
+*It has not been explored
+*current recipe ~8 nm/min
 |-
@@ Line 43: / Line 44: @@
 *Isotropic
 |
-*Isotropic
+*Anisotropic
 |-
@@ Line 54: / Line 55: @@
 *Any size (in beaker)
 |
-*Chips (6-60 mm)
+*Samples < 150 mm wafers on carrier
-*100 mm wafers
+*one 150 mm wafer at a time
-*150 mm wafers
 |-
@@ Line 65: / Line 65: @@
 *Any material
 |
-*Every thing that is allowed in the Developer: TMAH Manual
+*silicon, silicon oxides and nitrides
+*Al, Cr, Ti (incl. oxides and nitrides)
+*Ta, W, Nb (incl. oxides and nitrides)
 |-
 |}