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Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

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*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*Titanium Oxide etch using BHF




==Comparison of Titanium Oxide (ALD) etch Methods [[Image:section under construction.jpg|70px]]==
==Comparison of Titanium Oxide (ALD) etch Methods ==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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!BHF
!BHF
!ICP Metal Etcher
!ICP Metal Etcher
!
!
|-
|-


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!Generel description
!Generel description
|Wet etch of TiO2 (ALD)
|Wet etch of TiO2 (ALD)
|
|Dry etch of TiO2
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-
|-


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|2,5 nm/min
|2,5 nm/min
|
|
*~30nm/min (pure Al)
*It has not been explored
|
*current recipe ~8 nm/min
*~350 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-
|-


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*Isotropic
*Isotropic
|
|
*Isotropic
*Anisotropic
|
*Anisotropic (vertical sidewalls)
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-


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!Substrate size
!Substrate size
|
|
*100 mm wafers (in bath)
*
*150 mm wafers (in bath)
*Any size (in beaker)
*Any size (in beaker)
|
|
*Chips (6-60 mm)
*Samples < 150 mm wafers on carrier
*100 mm wafers
*one 150 mm wafer at a time
*150 mm wafers
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
|In beaker:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
*Any material
|
|
*Every thing that is allowed in the Developer: TMAH Manual
*silicon, silicon oxides and nitrides
|
*Al, Cr, Ti (incl. oxides and nitrides)
*Silicon
*Ta, W, Nb (incl. oxides and nitrides)
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,  
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
*Silicon
*Silicon oxides
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}
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