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Etch of Titanium oxide has been test in the ICP metal etcher.
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==Etch of Titanium oxide has been test in the ICP metal etcher. ==


*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*Titanium Oxide etch using BHF
==Comparison of Titanium Oxide (ALD) etch Methods ==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!
!BHF
!ICP Metal Etcher
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of TiO2 (ALD)
|Dry etch of TiO2
|-
|-
|-style="background:LightGrey; color:black"
!Etch rate range
|2,5 nm/min
|
*It has not been explored
*current recipe ~8 nm/min
|-
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
*Isotropic
|
*Anisotropic
|-
|-
|-style="background:LightGrey; color:black"
!Substrate size
|
*
*Any size (in beaker)
|
*Samples < 150 mm wafers on carrier
*one 150 mm wafer at a time
|-
|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|In beaker:
*Any material
|
*silicon, silicon oxides and nitrides
*Al, Cr, Ti (incl. oxides and nitrides)
*Ta, W, Nb (incl. oxides and nitrides)
|-
|}