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New page: == The nano1.42 recipe == {| border="2" cellpadding="2" cellspacing="1" |+ '''Recipe nano1.42''' |- ! rowspan="6" align="center"| Recipe | Gas | C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<su...
 
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142 click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
== The nano1.42 recipe ==
== The nano1.42 recipe ==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->


{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
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<gallery caption="The results of the nano1.41 recipe" widths="250" heights="200" perrow="3">
<gallery caption="The results of the nano1.42 recipe" widths="250" heights="200" perrow="3">
image:WF_2E08a_23mar2011-030.jpg|The 30 nm trenches
image:WF_2E08a_23mar2011-030.jpg|The 30 nm trenches
image:WF_2E08a_23mar2011-060.jpg|The 60 nm trenches
image:WF_2E08a_23mar2011-060.jpg|The 60 nm trenches
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C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 40 W PP, -20 degs, 120 secs
C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 40 W PP, -20 degs, 120 secs
</gallery>
</gallery>
{| {{table}}
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rates||nm/min||148||158||164||167||166||160||8
|-
| Sidewall angle||degs||90||90||90||90||90||90||0
|-
| CD loss||nm/edge||7||-7||-7||-28||-28||-13||15
|-
| CD loss foot||nm/edge||12||5||6||-15||-1||1||10
|-
| Bowing||||-1||1||-2||-5||-7||-3||3
|-
| Bottom curvature||||-46||-30||-29||-31||-27||-32||8
|-
| zep||nm/min||||||||||||65||
|-
|
|}
==Etching SRN (Silicon Rich Nitride) with nano1.42==
''This test has been done by Leonid Beliaev'' <br>
*274nm SRN by LPCVD ("6 inch LS" recipe)
*Substrate: Si/SiO2(1100nm)
*DUV-lithography: KRF M230Y resist 360 nm, Barc 65 nm, exposure dose 220J/m2
*Pattern: Grating with period 400 nm and grating bar width of
*Barc etch in Pegasus 1 at -19 deg, 40s
*Nano 1.42 at -19 deg, 5 min
[[File:Etch_rate.png|400px]]
[[File:Test_007.jpg|400px|left|thumb|Image: Leonid Beliaev]]
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