Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11: Difference between revisions
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{{contentbydryetch}} | |||
== The nano1.1 recipe == | == The nano1.1 recipe == | ||
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</gallery> | </gallery> | ||
{| {{table}} | |||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Avg''' | |||
| align="center" style="background:#f0f0f0;"|'''Std''' | |||
|- | |||
| Etch rates||nm/min||183||218||232||249||256||228||29 | |||
|- | |||
| Sidewall angle||degs||95||94||94||93||93||94||1 | |||
|- | |||
| Cd loss ||nm/edge||-2||-4||-16||-15||-27||-13||10 | |||
|- | |||
| CD loss foot||nm/edge||-2||-4||-16||-15||3||-7||9 | |||
|- | |||
| Bowing||||36||40||49||48||40||42||6 | |||
|- | |||
| Curvature||||-55||-50||-39||-39||-42||-45||7 | |||
|- | |||
| zep||nm/min||||||||||||172|| | |||
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|} | |||
== Comments == | == Comments == | ||
The lower coil power run may still be isotropic-looking either because of a lack of deposition in the process, or because the bias increases as the coil power is decreased, hence the wafer would have received a more phyisically-aggressive process. Lower temp, lower coil + lower platen may be worth a look. | The lower coil power run may still be isotropic-looking either because of a lack of deposition in the process, or because the bias increases as the coil power is decreased, hence the wafer would have received a more phyisically-aggressive process. Lower temp, lower coil + lower platen may be worth a look. | ||