Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11: Difference between revisions

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+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11 click here]'''
+<!--Checked for updates on 30/7-2018 - ok/jmli -->
+<!--Checked for updates on 5/10-2020 - ok/jmli -->
+<!--Checked for updates on 28/6-2023 - ok/jmli -->
+<!--Checked for updates on 4/9-2025 - ok/jmli -->
+{{contentbydryetch}}
 == The nano1.1 recipe ==
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 C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 600 W CP, 50 W PP, 10 degs, 120 secs
 </gallery>
+{| {{table}}
+| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
+| align="center" style="background:#f0f0f0;"|''''''
+| align="center" style="background:#f0f0f0;"|'''30'''
+| align="center" style="background:#f0f0f0;"|'''60'''
+| align="center" style="background:#f0f0f0;"|'''90'''
+| align="center" style="background:#f0f0f0;"|'''120'''
+| align="center" style="background:#f0f0f0;"|'''150'''
+| align="center" style="background:#f0f0f0;"|'''Avg'''
+| align="center" style="background:#f0f0f0;"|'''Std'''
+|-
+| Etch rates||nm/min||183||218||232||249||256||228||29
+|-
+| Sidewall angle||degs||95||94||94||93||93||94||1
+|-
+| Cd loss ||nm/edge||-2||-4||-16||-15||-27||-13||10
+|-
+| CD loss foot||nm/edge||-2||-4||-16||-15||3||-7||9
+|-
+| Bowing||||36||40||49||48||40||42||6
+|-
+| Curvature||||-55||-50||-39||-39||-42||-45||7
+|-
+| zep||nm/min||||||||||||172||
+|-
+|
+|}
+== Comments ==
+The lower coil power run may still be isotropic-looking either because of a lack of deposition in the process, or because the bias increases as the coil power is decreased, hence the wafer would have received a more phyisically-aggressive process.  Lower temp, lower coil + lower platen may be worth a look.