Specific Process Knowledge/Etch/DRIE-Pegasus/ProcessA/PrA-2: Difference between revisions
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Latest revision as of 10:59, 4 September 2025
Feedback to this page: click here Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab
| Date | Substrate Information | Process Information | SEM Images | |||
|---|---|---|---|---|---|---|
| Wafer info | Exposed area | Conditioning | Recipe | Wafer ID | ||
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-2, 80 cycles or 14:40 minutes | C03991.03 |
|
| 2/5-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-2, 80 cycles or 14:40 minutes | C03991.06 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-2, 80 cycles or 14:40 minutes | C04047.03 |
|
| 3/6-2016 | 4" Travka20 Wafer | 20 % Si | 3 minute TDESC clean | PrA-2, 80 cycles or 14:40 minutes | C04047.06 |
|
