Specific Process Knowledge/Etch/III-V ICP/GaAs-AlGaAs: Difference between revisions
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|Sidewall angle | |Sidewall angle | ||
|~ 85-90 <sup>o</sup> | |~ 85-90<sup>o</sup> | ||
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|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | |Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | ||
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|Sidewall angle | |Sidewall angle | ||
|~ 90 <sup>o</sup> | |~ 90<sup>o</sup> | ||
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|Selectivity (GaAs:SiO<sub>2</sub>) | |Selectivity (GaAs:SiO<sub>2</sub>) | ||
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|Sidewall angle | |Sidewall angle | ||
|85-90 <sup>o</sup> | |85-90<sup>o</sup> | ||
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|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | |Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | ||
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{| border="1" cellspacing="2" cellpadding="3" | {| border="1" cellspacing="2" cellpadding="3" | ||
![[image:ICP_BCL3_result.jpg|300x300px|thumb|left|Result of GaAs etching with BCl<sub>3</sub>. Qijiang Ran, DTU Photonics, 2011. ]] | ![[image:ICP_BCL3_result.jpg|300x300px|thumb|left|Result of GaAs etching with BCl<sub>3</sub>. Done by: Qijiang Ran, DTU Photonics, 2011. ]] | ||
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