Specific Process Knowledge/Etch/III-V ICP/GaAs-AlGaAs: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaAs-AlGaAs click here]''' | ||
===GaAs/AlGaAs etching using III-V ICP=== | ===GaAs/AlGaAs etching using III-V ICP=== | ||
'''''Recipes developed and/or tested by DTU Photonics internal before 2011''''' | |||
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|Sidewall angle | |Sidewall angle | ||
|~ 85-90 <sup>o</sup> | |~ 85-90<sup>o</sup> | ||
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|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | |Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | ||
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|Sidewall angle | |Sidewall angle | ||
|~ 90 <sup>o</sup> | |~ 90<sup>o</sup> | ||
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|Selectivity (GaAs:SiO<sub>2</sub>) | |Selectivity (GaAs:SiO<sub>2</sub>) | ||
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|Platen chiller temperature | |Platen chiller temperature | ||
|20 <sup>o</sup>C | |20<sup>o</sup>C | ||
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|Sidewall angle | |Sidewall angle | ||
|85-90 <sup>o</sup> | |85-90<sup>o</sup> | ||
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|Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | |Selectivity (GaAs:Si<sub>3</sub>N<sub>4</sub>, GaAs:AlInP) | ||
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![[image:ICP_BCL3_result.jpg|300x300px|thumb|left|Result of GaAs etching with BCl<sub>3</sub>. Qijiang Ran, DTU Photonics, 2011. ]] | ![[image:ICP_BCL3_result.jpg|300x300px|thumb|left|Result of GaAs etching with BCl<sub>3</sub>. Done by: Qijiang Ran, DTU Photonics, 2011. ]] | ||
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