Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions
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!style="background:silver; color:black" align="left" valign="top"|Etch depth | !style="background:silver; color:black" align="left" valign="top"|Etch depth | ||
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* | *300nnm | ||
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*~270 nm | *~270 nm | ||
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*>80 nm/min | *>80 nm/min | ||
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*22 nm/min +- 0. | *22 nm/min +- 0.3nnm/min (one standard deviation) | ||
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!style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity | !style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*< | *<±2% | ||
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* | *±(0.2% ±0.2%) | ||
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!style="background:silver; color:black" align="left" valign="top"|Reproducibility | !style="background:silver; color:black" align="left" valign="top"|Reproducibility | ||
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*< | *<±2% | ||
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* | *±(0.8% ±0.5%) | ||
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!style="background:silver; color:black" align="left" valign="top"|Selectivity (Ti etch rate/ZEP etch rate) | !style="background:silver; color:black" align="left" valign="top"|Selectivity (Ti etch rate/ZEP etch rate) | ||