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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''  
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==Results from the acceptance test in February 2011==
==Results from the acceptance test in February 2011==
'''Acceptance test for Ti etch:'''
'''Acceptance test for Ti etch :'''
{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
Line 15: Line 15:
*50 mm SSP Si wafer
*50 mm SSP Si wafer
*525 µm thick
*525 µm thick
*Supplied by Danchip
*Supplied by Nanolab
|.
|.
|-
|-
Line 32: Line 32:
!style="background:silver; color:black" align="left" valign="top"|Features to be etched
!style="background:silver; color:black" align="left" valign="top"|Features to be etched
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*300nm - 3µm dots and lines + a square of 200µmx200µm
*300 nm - 3µm dots and lines + a square of 200µmx200µm
|.
|.
|-  
|-  
!style="background:silver; color:black" align="left" valign="top"|Etch depth
!style="background:silver; color:black" align="left" valign="top"|Etch depth
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*300nm
*300nnm
|
|
*~270 nm
*~270 nm
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!style="background:silver; color:black" align="left" valign="top"|Etch rate
!style="background:silver; color:black" align="left" valign="top"|Etch rate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*>80nm/min
*>80 nm/min
|
|
*22nm/min +- 0.3nm/min (one standard deviation)
*22 nm/min +- 0.3nnm/min (one standard deviation)
|-
|-
!style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
!style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<+-2%
*<&plusmn;2%
|
|
*+-(0.2% +-0.2%)
*&plusmn;(0.2% &plusmn;0.2%)
|-
|-
!style="background:silver; color:black" align="left" valign="top"|Reproducibility
!style="background:silver; color:black" align="left" valign="top"|Reproducibility
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<+-2%
*<&plusmn;2%
|
|
*+-(0.8% +-0.5%)
*&plusmn;(0.8% &plusmn;0.5%)
|-
|-
!style="background:silver; color:black" align="left" valign="top"|Selectivity (Ti etch rate/ZEP etch rate)
!style="background:silver; color:black" align="left" valign="top"|Selectivity (Ti etch rate/ZEP etch rate)
Line 78: Line 78:
!Ti etch acceptance
!Ti etch acceptance
|-
|-
|Neutalizer current [mA]
|Neutralizer current [mA]
|550
|550
|-
|-
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