Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]''' | ||
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=Etch slow (this was tested in 2012 by ''bghe@nanolab'')= | =Etch slow (this was tested in 2012 by ''bghe@nanolab'')= | ||
This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully | This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10 min. This is important when a Cr is to be etched as this cannot withstand plasma ashing (to remove the resist mask) after the etch. All though it is tested on silicon the recipe can be used ofr other material giving slightly different etch rates. | ||
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