Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions
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| style="background: LightGray"| [[/Comparison| Hardware comparison]] | | style="background: LightGray"| [[/Comparison| Hardware comparison]] | ||
| style="background:#DCDCDC;"| Comparison of the different hardware setups | | style="background:#DCDCDC;"| Comparison of the different hardware setups of our dry etchers | ||
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| style="background: LightGray"| [[/Bonding| Using carrier wafer]] | | style="background: LightGray"| [[/Bonding| Using carrier wafer]] | ||
Latest revision as of 09:40, 4 September 2025
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Techniques, hardware and challenges common to all dry etch tools
This page contains information that is common to dry etch instruments.
| Dry etch page | Description |
|---|---|
| Hardware comparison | Comparison of the different hardware setups of our dry etchers |
| Using carrier wafer | Processing different sizes of substrates by using a carriers: bonding or not bonding |
| Optical Endpoint System | Using the OES technique to find endpoints and to diagnose plasmas |
| LASER Endpoint System | Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers) |
| Etch product volatility | Links to various tables with data on etch product volatility |